Freescale Semiconductor
Technical Data
Document Number: MMRF1305H
Rev. 0, 12/2013
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
RF power transistors suitable for both narrowband and broadband CW or
pulse applications operating at frequencies from 1.8 to 2000 MHz, such as
military and radio communications and radar. These devices are fabricated
using Freescale’s enhanced ruggedness platform and are suitable for use in
applications where high VSWRs are encountered.
Typical Performance:
V
DD
= 50 Vdc
Frequency
(MHz)
30--512
(1,3)
512
(2)
512
(2)
Signal Type
Two--Tone
(100 kHz spacing)
CW
Pulse (200
sec,
20%
Duty Cycle)
P
out
(W)
100 PEP
100
100 Peak
G
ps
(dB)
19.0
27.2
26.0
D
(%)
30.0
70.0
70.0
IMD
(dBc)
--30
—
—
MMRF1305HR5
MMRF1305HSR5
1.8-
-2000 MHz, 100 W, 50 V
BROADBAND
RF POWER LDMOS TRANSISTORS
NI-
-780H-
-4L
MMRF1305HR5
Load Mismatch/Ruggedness
Frequency
(MHz)
512
(2)
Signal Type
Pulse
(100
sec,
20%
Duty Cycle)
CW
VSWR
>65:1
at all Phase
Angles
P
out
(W)
130
(3 dB
Overdrive)
126
(3 dB
Overdrive)
Test
Voltage
50
Result
No Device
Degradation
512
(2)
NI-
-780S-
-4L
MMRF1305HSR5
1. Measured in 30--512 MHz broadband reference circuit.
2. Measured in 512 MHz narrowband test circuit.
3. The values shown are the minimum measured performance numbers across the
indicated frequency range.
Gate A
Drain A
Features
Wide Operating Frequency Range
Extremely Rugged
Unmatched, Capable of Very Broadband Operation
Integrated Stability Enhancements
Low Thermal Resistance
Integrated ESD Protection Circuitry
In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.
Gate B
Drain B
(Top View)
Note: The backside of the package is the
source terminal for the transistors.
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(4)
4. Continuous use at maximum temperature will affect MTTF.
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +133
--6.0, +10
--65 to +150
--40 to +150
--40 to +225
Unit
Vdc
Vdc
C
C
C
Freescale Semiconductor, Inc., 2013. All rights reserved.
MMRF1305HR5 MMRF1305HSR5
1
RF Device Data
Freescale Semiconductor, Inc.
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
CW: Case Temperature 81C, 100 W CW, 50 Vdc, I
DQ(A+B)
= 100 mA, 512 MHz
Thermal Impedance, Junction to Case
Pulse: Case Temperature 73C, 100 W Peak, 100
sec
Pulse Width,
20% Duty Cycle, 50 Vdc, I
DQ(A+B)
= 100 mA, 512 MHz
Symbol
R
JC
Z
JC
Value
(1)
0.38
0.12
Unit
C/W
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2, passes 2500 V
B, passes 250 V
IV, passes 2000 V
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
(2)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 50 mA)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(2)
(V
DS
= 10 Vdc, I
D
= 170
Adc)
Gate Quiescent Voltage
(V
DD
= 50 Vdc, I
D
= 100 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(2)
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Dynamic Characteristics
(2)
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
0.24
23.9
73.6
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1.6
2.1
—
2.1
2.6
0.23
2.6
3.1
—
Vdc
Vdc
Vdc
I
GSS
V
(BR)DSS
I
DSS
I
DSS
—
133
—
—
—
141
—
—
400
—
3
10
nAdc
Vdc
Adc
Adc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ(A+B)
= 100 mA, P
out
= 100 W Peak (20 W Avg.), f = 512 MHz,
200
sec
Pulse Width, 20% Duty Cycle
Power Gain
Drain Efficiency
Input Return Loss
Frequency
(MHz)
512
Signal
Type
Pulse
(100
sec,
20% Duty Cycle)
CW
G
ps
D
IRL
P
out
(W)
130 Peak
(3 dB Overdrive)
126
(3 dB Overdrive)
25.0
68.0
—
26.0
70.0
--14
27.0
—
--9
dB
%
dB
Load Mismatch/Ruggedness
(In Freescale Test Fixture, 50 ohm system, I
DQ(A+B)
= 100 mA)
VSWR
>65:1
at all Phase Angles
Test Voltage, V
DD
50
Result
No Device Degradation
1. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
2. Each side of device measured separately.
MMRF1305HR5 MMRF1305HSR5
2
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
1000
Measured with
30
mV(rms)ac @ 1 MHz
V
GS
= 0 Vdc
C, CAPACITANCE (pF)
100
1.05
1.04
C
iss
NORMALIZED V
GS(Q)
1.03
1.02
1.01
1
0.99
0.98
0.97
0.96
0.95
0
10
20
30
40
50
--50
--25
0
25
50
75
100
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
T
C
, CASE TEMPERATURE (C)
200 mA
I
DQ(A+B)
= 100 mA
300 mA
600 mA
V
DD
= 50 Vdc
10
C
oss
1
C
rss
0.1
Note:
Each side of device measured separately.
Figure 2. Capacitance versus Drain-
-Source Voltage
Figure 3. Normalized V
GS
versus Quiescent
Current and Case Temperature
I
DQ
(mA)
100
200
300
600
Slope (mV/C)
--1.945
--1.826
--1.700
--1.648
10
8
I
D
= 2.2 Amps
V
DD
= 50 Vdc
10
7
MTTF (HOURS)
10
6
2.8 Amps
3.3 Amps
10
5
10
4
90
110
130
150
170
190
210
230
250
T
J
, JUNCTION TEMPERATURE (C)
Note:
MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 4. MTTF versus Junction Temperature - CW
-
MMRF1305HR5 MMRF1305HSR5
RF Device Data
Freescale Semiconductor, Inc.
3
512 MHz NARROWBAND PRODUCTION TEST FIXTURE
B1
C2
C1
COAX1
L1
C13
L3
C10 C11
C14
COAX3
C12
C4
C6
C7
CUT OUT AREA
C15
C16
C17
C18
C24
C5
C3
COAX2
C8
L2
L4
C19
C20
C21 C22
COAX4
C9
B2
C23
Figure 5. MMRF1305HR5(HSR5) Narrowband Test Circuit Component Layout — 512 MHz
Table 5. MMRF1305HR5(HSR5) Narrowband Test Circuit Component Designations and Values — 512 MHz
Part
B1, B2
C1, C8
C2, C9
C3
C4, C5
C6, C7, C15, C16, C17, C18
C10, C21
C11, C22
C12, C23
C13, C19
C14, C20
C24
Coax1, 2
Coax3, 4
L1, L2
L3, L4
PCB
Description
Small Ferrite Beads, Surface Mount
22
F,
35 V Tantalum Capacitors
120 pF Chip Capacitors
4.3 pF Chip Capacitor
56 pF Chip Capacitors
27 pF Chip Capacitors
0.1
F
Chip Capacitors
0.01
F
Chip Capacitors
470
F,
63 V Electrolytic Capacitors
240 pF Chip Capacitors
2.2
F
Chip Capacitors
7.5 pF Chip Capacitor
25
Semi Rigid Coax, 2.2 Shield Length
25
Semi Rigid Coax, 2.0 Shield Length
5 Turns, 18.5 nH Inductors, Wire Wound
7 Turns, 22 nH Inductors, Wire Wound
0.030,
r
= 2.55
Part Number
2743019447
T491X226K035AT
ATC100B121JT500XT
ATC100B4R3CT500XT
ATC100B560CT500XT
ATC100B270JT500XT
C1812F104K1RACTU
C1825C103K1GACTU
MCGPR63V477M13X26-RH
ATC100B241JT200XT
G2225X7R225KT3AB
ATC100B7R5CT500XT
UT-141C-25
UT-141C-25
A05TKLC
B07TJLC
AD255D
Manufacturer
Fair-Rite
Kemet
ATC
ATC
ATC
ATC
Kemet
Kemet
Multicomp
ATC
ATC
ATC
Micro-Coax
Micro-Coax
Coilcraft
Coilcraft
Arlon
MMRF1305HR5 MMRF1305HSR5
4
RF Device Data
Freescale Semiconductor, Inc.
+
B1
L3
C2
Z10
Z9
C16
Z13
DUT
Z21
Z20
L2
COAX2
V
BIAS
+
C8
C9
+
C19
C20
C21
C22
C23
L4
V
SUPPLY
B2
C18
Z23
Z22
C17
Z24
Z25
C24
Z17
C5
C6
Z18
C7
Z19
Z14
RF
OUTPUT
Z11
Z12
C15
Z7
Z2
Z8
C4
Z15
C3
Z16
Z3
Z4
Z5
Z6
L1
COAX3
+
C1
C13
C12
C14
C10
C11
V
SUPPLY
RF Device Data
Freescale Semiconductor, Inc.
COAX1
V
BIAS
COAX4
RF
INPUT Z1
Figure 6. MMRF1305HR5(HSR5) Narrowband Test Circuit Schematic — 512 MHz
Table 6. MMRF1305HR5(HSR5) Narrowband Test Circuit Microstrips — 512 MHz
Microstrip
Z1
Z2, Z15
Z3, Z16
Z4, Z17
Z5, Z18
Z6, Z19
Z7*, Z20*
Z8, Z21
Description
0.366
0.082 Microstrip
0.070
0.102 Microstrip
0.094
0.102 Microstrip
0.103
0.102 Microstrip
0.125
0.102 Microstrip
0.168
0.102 Microstrip
0.912
0.058 Microstrip
0.420
0.726 Microstrip
Microstrip
Z9, Z22
Z10*, Z23*
Z11, Z24
Z12, Z25
Z13
Z14
Description
0.271
0.507 Microstrip
0.822
0.150 Microstrip
0.590
0.216 Microstrip
0.257
0.216 Microstrip
0.192
0.082 Microstrip
0.173
0.082 Microstrip
* Line length includes microstrip bends
MMRF1305HR5 MMRF1305HSR5
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
