INTEGRATED CIRCUITS
SA601
Low voltage LNA and mixer – 1 GHz
Product data
Supersedes data of 1994 Dec 15
2004 Dec 14
Philips
Semiconductors
Philips Semiconductors
Product data
1GHz low voltage LNA and mixer
SA601
DESCRIPTION
The SA601 is a combined RF amplifier and mixer designed for
high-performance low-power communication systems from
800-1200MHz. The low-noise preamplifier has a 1.6dB noise figure
at 900MHz with 11.5dB gain and an IP3 intercept of -2dBm at the
input. The gain is stabilized by on-chip compensation to vary less
than
±0.2dB
over -40 to +85°C temperature range. The
wide-dynamic-range mixer has a 9.5dB noise figure and IP3 of
–2dBm at the input at 900MHz. The nominal current drawn from a
single 3V supply is 7.4mA. The Mixer can be powered down to
further reduce the supply current to 4.4mA.
PIN CONFIGURATION
DK Package
V
CC
1
LNA GND 2
LNA IN 3
GND 4
GND 5
GND 6
MIXER PWRDN 7
GND 8
LOIN1 9
LOIN2 10
20 V
CC
19 GND
18 LNA OUT
17 GND
16 MIXER IN
15 GND
14 MIXER OUT
13 MIXER OUT
12 GND
11 V
CC
FEATURES
•
Low current consumption: 7.4mA nominal, 4.4mA with the mixer
powered-down
•
Outstanding LNA noise figure: 1.6dB at 900MHz
•
High system power gain: 18dB (LNA + Mixer) at 900MHz
•
Excellent gain stability versus temperature and supply voltage
•
External >-7dBm LO can be used to drive the mixer
SR00059
Figure 1. Pin Configuration
APPLICATIONS
•
900MHz cellular front-end (NADC, GSM, AMPS, TACS)
•
900MHz cordless front-end (CT1, CT2)
•
900MHz receivers
TEMPERATURE RANGE
-40 to +85
°
C
ORDER CODE
SA601DK
DWG #
SOT266-1
ORDERING INFORMATION
DESCRIPTION
20-Pin Plastic Shrink Small Outline Package (Surface-mount, SSOP)
BLOCK DIAGRAM
V
CC
GND
LNA
OUT
GND
MIXER
IN
GND
MIXER
OUT
MIXER
OUT
GND
V
CC
20
19
18
17
16
15
IF
RF
14
13
12
11
IF
LO
BUFFER
LNA
1
2
3
4
5
6
7
8
9
10
V
CC
GND
LNA IN
GND
GND
GND
MIXER
PWRDN
GND
LO IN1
LO IN2
SR00058
Figure 2. Block Diagram
2004 Dec 14
2
Philips Semiconductors
Product data
1GHz low voltage LNA and mixer
SA601
ABSOLUTE MAXIMUM RATINGS
3
SYMBOL
V
CC
V
IN
P
D
T
JMAX
P
MAX
T
STG
Supply voltage
1
Voltage applied to any other pin
Power dissipation, T
A
= 25°C (still air)
2
20-Pin Plastic SSOP
Maximum operating junction temperature
Maximum power input/output
Storage temperature range
PARAMETER
RATING
-0.3 to +6
-0.3 to (V
CC
+ 0.3)
980
150
+20
–65 to +150
UNITS
V
V
mW
°C
dBm
°C
NOTE:
1. Transients exceeding 8V on V
CC
pin may damage product.
2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,
θ
JA
: 20-Pin SSOP = 110°C/W
3. Pins 9 and 10 are sensitive to electrostatic discharge (ESD).
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
CC
T
A
T
J
Supply voltage
Operating ambient temperature range
Operating junction temperature
PARAMETER
RATING
2.7 to 5.5
-40 to +85
-40 to +105
UNITS
V
°C
°C
DC ELECTRICAL CHARACTERISTICS
V
CC
= +3V, T
A
= 25
°
C; unless otherwise stated.
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
7.4
I
CC
V
LNA–IN
V
LNA–OUT
V
MX–IN
Supply current
Su ly
LNA input bias voltage
LNA output bias voltage
Mixer RF input bias voltage
Mixer power-down input low
4.4
0.78
2.1
0.94
mA
V
V
V
MAX
UNITS
2004 Dec 14
3
Philips Semiconductors
Product data
1GHz low voltage LNA and mixer
SA601
AC ELECTRICAL CHARACTERISTICS
V
CC
= +3V, T
A
= 25
°
C; LO
IN
= -7dBm @ 964MHz; unless otherwise stated.
LIMITS
SYMBOL
S
21
∆S
21
/∆T
∆S
21
/∆f
S
12
S
11
S
22
P
-1dB
IP3
NF
VG
C
PG
C
S
11M
NF
M
P
-1dB
IP3
M
IP
2INT
P
RFM-IF
P
LO-IF
P
LO-RFM
P
LO-RF
P
LNA–RFM
P
RFM–LO
LO
IN
Amplifier gain
Gain temperature sensitivity
Gain frequency variation
Amplifier reverse isolation
Amplifier input match
1
Amplifier output match
1
Amplifier input 1dB gain compression
Amplifier input third order intercept
Amplifier noise figure
Mixer voltage conversion gain: R
P
= R
L
= 1kΩ
Mixer power conversion gain: R
P
= R
L
= 1kΩ
Mixer input match
1
Mixer SSB noise figure
Mixer input 1dB gain compression
Mixer input third order intercept
Mixer input second order intercept
Mixer RF feedthrough
LO feedthrough to IF
LO to mixer input feedthrough
LO to LNA input feedthrough
LNA output to mixer input
Mixer input to LO feedthrough
LO drive level
PARAMETER
TEST CONDITIONS
881MHz
881MHz
800MHz - 1.2GHz
881MHz
881MHz
881MHz
881MHz
f
2
– f
1
= 25kHz, 881MHz
881MHz
f
S
= 881MHz, f
LO
= 964MHz,
f
IF
= 83MHz
f
S
= 881MHz, f
LO
= 964MHz,
f
IF
= 83MHz
881MHz
881MHz
881MHz
f
2
– f
1
= 25kHz, 881MHz
881MHz
881MHz
881MHz
881MHz
881MHz
881MHz
881MHz
964MHz
-3.5
8.0
-3.5
1.3
18.0
5.0
-3σ
10
TYP
11.5
0.003
0.01
-20
-10
-10
-16
-2
1.6
19.5
6.5
-10
9.5
-13
-2
12
-7
-25
-38
-40
-40
-23
-7
-0.5
11.0
-0.5
1.9
21.0
8.0
+3σ
13
UNITS
dB
dB/°C
dB/MHz
dB
dB
dB
dBm
dBm
dB
dB
dB
dB
dB
dBm
dBm
dBm
dB
dB
dB
dB
dB
dB
dBm
NOTE:
1. Simple L/C elements are needed to achieve specified return loss.
2004 Dec 14
4
Philips Semiconductors
Product data
1GHz low voltage LNA and mixer
SA601
C15
1µF
J1
LNA IN
C1
100pF
w = 10 mils
L = 535 mils
L1
56nH
V
CC
C11
100pF
w = 10 mils
L = 535 mils
**
J5
LNA OUT
C2
2.7pF
**
U1
1
2
3
4
5
6
7
8
9
10
R1
100Ω
Vcc
GND
LNA IN
GND
GND
GND
MIXER PD
GND
LO IN
LO IN
C13
100pF
C12
2.2pF
w = 15 mils
L = 95 mils
C10
J4
MIXER IN
w = 15 mils
L = 110 mils
J2
EXT LO
(-7dBm, 964MHz)
C3
100pF
Vcc
GND
LNA OUT
GND
MIXER IN
GND
MIXER OUT
MIXER OUT
GND
Vcc
20
19
18
17
16
15
14
13
12
11
C9
4.7pF
w = 15 mils
L = 190 mils
C7
100pF
V
CC
L3
270nH
33pF
C5
18pF
C8
100nF
SA601
L2
470nH
C4
100pF
C14
100nF
V
CC
C6
8.2pF
R2
*
J3
MIXER OUT
(50Ω, 83MHz)
2.2k
** *
*
SEE MIXER POWER GAIN NOTE BELOW
**
SPIRAL INDUCTORS ON NATURAL FR-4, 62 MILS THICK
** *
SEE MIXER FILTER INTERFACE NOTE BELOW
Figure 3. Application Circuit
SR00060
CIRCUIT TECHNOLOGY
LNA
Impedance Match:
Intrinsic return loss at the input and output ports
is 7dB and 9dB, respectively. With no external matching, the
associated LNA gain is
≈10dB
and the noise figure is
≈1.4dB.
However, the return loss can be improved at 881MHz using
suggested L/C elements (Figure 5) as the LNA is unconditionally
stable.
Noise Match:
The LNA achieves 1.6dB noise figure at 881MHz
when S
11
= -10dB. Further improvements in S
11
will slightly
decrease the NF and increase S
21
.
Temperature Compensation:
The LNA has a built-in temperature
compensation scheme to reduce the gain drift to 0.003dB/°C from
–40°C to +85°C.
Supply Voltage Compensation:
Unique circuitry provides gain
stabilization over wide supply voltage range. The gain changes no
more than 0.5dB when V
CC
increases from 3V to 5V.
LO Drive Level:
Resistor R1 can be replaced by an inductor of
4.7nH and C3 should be adjusted to achieve a good return loss at
the LO port. Under this condition, the mixer will operate with less
than -10dBm LO drive.
IP3 Performance:
C9 between Pin 16 and ground can be removed
to introduce 3dB mismatch loss, while improving the IP3 to +3dBm.
The associated noise figure is 11dB.
Mixer
Input Match:
The mixer is configured for maximum gain and best
noise figure. The user needs to supply L/C elements to achieve this
performance.
Power Gain:
The gain can be increased by approximately 1.5dB by
placing R2 across C7, instead of C5.
Power Down:
The mixer can be disabled by connecting Pin 7 to
ground. When the mixer is disabled, 3mA is saved.
Power Combining:
The mixer output circuit features passive
power combining (patent pending) to optimize conversion gain and
noise figure performance without using extra DC current or
degrading the IP3. For IF frequencies significantly different than
83MHz, the component values must be altered accordingly.
Filter Interface:
For system integration where a high impedance
filter of 1kΩ is to be cascaded at the mixer IF output, capacitors C5
and C6 need to be changed to 27pF and 1000pF, respectively.
2004 Dec 14
5
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