D2
PA
K
PSMN7R6-60BS
N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK
Rev. 2 — 2 March 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
gate-drain charge
total gate charge
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 13;
see
Figure 9
V
GS
= 10 V; I
D
= 25 A; V
DS
= 30 V;
see
Figure 15;
see
Figure 14
V
GS
= 10 V; I
D
= 25 A; V
DS
= 30 V;
see
Figure 14;
see
Figure 15
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 92 A;
V
sup
≤
100 V; R
GS
= 50
Ω;
unclamped
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
-55
-
Typ
-
-
-
-
5.9
Max
60
92
149
175
7.8
Unit
V
A
W
°C
mΩ
Static characteristics
Dynamic characteristics
Q
GD
Q
G(tot)
-
-
10.6
38.7
-
-
nC
nC
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
-
-
110
mJ
NXP Semiconductors
PSMN7R6-60BS
N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
[1]
source
mounting base; connected to
drain
2
1
3
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
SOT404 (D2PAK)
[1]
It is not possible to make connection to pin 2.
3. Ordering information
Table 3.
Ordering information
Package
Name
PSMN7R6-60BS
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Type number
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
T
sld(M)
I
S
I
SM
E
DS(AL)S
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 92 A;
V
sup
≤
100 V; R
GS
= 50
Ω;
unclamped
V
GS
= 10 V; T
mb
= 100 °C; see
Figure 1
V
GS
= 10 V; T
mb
= 25 °C; see
Figure 1
pulsed; t
p
≤
10 µs; T
mb
= 25 °C;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
Max
60
60
20
65
92
389
149
175
175
260
92
389
110
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
Avalanche ruggedness
PSMN7R6-60BS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 2 March 2012
2 of 14
NXP Semiconductors
PSMN7R6-60BS
N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK
100
I
D
(A)
80
003aad661
120
P
der
(%)
80
03aa16
60
40
40
20
0
0
50
100
150
200
T
mb
(°C)
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
003aad700
10
3
I
D
(A)
10
2
Limit R
DSon
= V
DS
/ I
D
10
μs
100
μs
10
DC
1
1 ms
10 ms
100 ms
10
−1
10
−2
1
10
V
DS
(V)
10
2
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN7R6-60BS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 2 March 2012
3 of 14
NXP Semiconductors
PSMN7R6-60BS
N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
Conditions
Min
-
-
Typ
0.49
50
Max
1.01
-
Unit
K/W
K/W
thermal resistance from junction to see
Figure 4
mounting base
thermal resistance from junction to Minimum footprint; mounted on a
ambient
printed circuit board
1
Z
th
(K/W)
10
−1
003aad662
δ
= 0.5
0.2
0.1
0.02
0.05
single shot
t
p
T
10
−2
P
δ
=
t
p
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
T
t
t
p
(s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN7R6-60BS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 2 March 2012
4 of 14
NXP Semiconductors
PSMN7R6-60BS
N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
V
GSth
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
gate-source threshold
voltage
Conditions
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 10;
see
Figure 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 11
I
DSS
I
GSS
R
DSon
drain leakage current
gate leakage current
drain-source on-state
resistance
V
DS
= 60 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 60 V; V
GS
= 0 V; T
j
= 125 °C
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 25 A; T
j
= 175 °C;
see
Figure 12
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 13;
see
Figure 9
R
G
Q
G(tot)
Q
GS
Q
GS(th)
Q
GS(th-pl)
Q
GD
V
GS(pl)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
gate resistance
total gate charge
gate-source charge
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
I
D
= 25 A; V
DS
= 30 V; V
GS
= 10 V;
see
Figure 15;
see
Figure 14
I
D
= 25 A; V
DS
= 30 V; see
Figure 14;
see
Figure 15
V
DS
= 30 V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 16;
see
Figure 8
V
DS
= 30 V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 16
V
DS
= 30 V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 16;
see
Figure 8
V
DS
= 30 V; R
L
= 1.2
Ω;
V
GS
= 10 V;
R
G(ext)
= 4.7
Ω
f = 1 MHz
I
D
= 25 A; V
DS
= 30 V; V
GS
= 10 V;
see
Figure 14;
see
Figure 15
Dynamic characteristics
-
-
-
-
-
-
-
-
-
-
-
-
-
38.7
12.9
6.9
6
10.6
5.6
2651
342
183
19
21
37
13
-
-
-
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
Min
54
60
2
1
-
-
-
-
-
-
-
-
Typ
-
-
3
-
-
0.05
-
2
2
13.3
5.9
0.98
Max
-
-
4
-
4.6
10
100
100
100
18
7.8
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
Ω
Static characteristics
PSMN7R6-60BS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 2 March 2012
5 of 14
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