2SK3516-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
P4
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Symbol
Ratings
Unit
V
V
DS
450
A
I
D
±8
A
I
D(puls]
±32
V
V
GS
±30
A
I
AR
*2
8
mJ
E
AS
*1
193
kV/µs
dV
DS
/dt
*4
20
dV/dt
*3
5
kV/µs
°C
P
D
Ta=25
1.67
W
°C
Tc=25
65
Operating and storage
T
ch
+150
°C
-55 to +150
temperature range
T
stg
°C
< -I
D
, -di/dt=50A/µs, Vcc < BV
DSS
, Tch < 150°C
*1 L=5.53mH, Vcc=45V *2 Tch <150°C *3 I
F
=
=
=
=
*4 VDS < 450V
=
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
= 250µA
V
GS
=0V
µA
I
D
= 250
V
DS
=V
GS
V
DS
=450V V
GS
=0V
V
DS
=360V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=4A V
GS
=10V
I
D
=4A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=300V I
D
=4A
V
GS
=10V
R
GS
=10
Ω
V
CC
=225V
I
D
=8A
V
GS
=10V
L=5.53mH T
ch
=25°C
I
F
=8A V
GS
=0V T
ch
=25°C
I
F
=8A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
T
ch
=25°C
T
ch
=125°C
Min.
450
3.0
Typ.
Max.
5.0
25
250
100
0.65
Units
V
V
µA
nA
Ω
S
pF
4
10
0.50
8
800
1200
120
150
4.5
7
15
23
12
18
25
38
7
11
22
33
9.5
14.5
6.5
10
1.00
0.7
3.5
ns
nC
8
1.50
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
1.92
75.0
Units
°C/W
°C/W
1
2SK3516-01L,S,SJ
Characteristics
FUJI POWER MOSFET
80
70
60
Allowable Power Dissipation
PD=f(Tc)
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=45V,I(AV)<=8A
300
250
200
50
EAV [mJ]
0
25
50
75
100
125
150
PD [W]
40
30
20
150
100
50
10
0
0
0
25
50
75
100
125
150
Tc [
°
C]
starting Tch [
°
C]
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
30
28
26
24
22
20
20V
10V
10
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
ID [A]
16
14
12
10
8
6
4
2
0
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30
7.0V
VGS=6.5V
7.5V
ID[A]
1
0.1
0
18
8V
1
2
3
4
5
6
7
8
9
10
VDS [V]
VGS[V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
2.0
1.8
1.6
1.4
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
VGS=6.5V 7.0V
7.5V
8V
10V
20V
RDS(on) [
Ω
]
0.1
1
10
10
1.2
1.0
0.8
0.6
0.4
0.2
gfs [S]
1
0.1
0.0
0
5
10
15
20
25
ID [A]
ID [A]
2
2SK3516-01L,S,SJ
FUJI POWER MOSFET
2.0
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=4A,VGS=10V
Gate Threshold Voltage vs. Tch
7.0
6.5
6.0
5.5
VGS(th)=f(Tch):VDS=VGS,ID=250µA
1.5
5.0
max.
VGS(th) [V]
RDS(on) [
Ω
]
4.5
4.0
3.5
3.0
min.
1.0
max.
typ.
0.5
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
0.0
Tch [
°
C]
-50
-25
0
25
50
75
100
125
150
Tch [
°
C]
Typical Gate Charge Characteristics
24
22
20
18
16
14
360V
Vcc= 90V
225V
VGS=f(Qg):ID=8A, Tch=25°C
10n
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
1n
Ciss
VGS [V]
C [F]
12
10
8
6
4
2
0
0
10
20
30
40
50
60
100p
Coss
10p
Crss
1p
10
-1
10
0
10
1
10
2
10
3
Qg [nC]
VDS [V]
Typical Forward Characteristics of Reverse Diode
100
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V, VGS=10V, RG=10Ω
IF=f(VSD):80µs Pulse test,Tch=25°C
10
10
2
tr
td(off)
IF [A]
t [ns]
td(on)
10
1
tf
1
10
0.1
0.00
0
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
10
0
10
1
VSD [V]
ID [A]
3
2SK3516-01L,S,SJ
FUJI POWER MOSFET
10
1
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [℃/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
Maximum Avalanche Current Pulsewidth
10
2
I
AV
=f(t
AV
):starting Tch=25°C. Vcc=45V
Avalanche current I
AV
[A]
10
1
Single Pulse
10
0
10
-1
10
-2
-8
10
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
t
AV
[sec]
Outline Drawings (mm)
FUJI POWER MOS FET
Type(L)
Type(S)
FUJI POWER MOS FET
Type(SJ)
FUJI POWER MOS FET
OUT VIEW
OUT VIEW
See Note: 1.
4
See Note: 1.
Trademark
Fig. 1.
Fig. 1.
See Note: 1.
Trademark
Trademark
Lot No.
Lot No.
Type name
Lot No.
Type name
Type name
PRE-SOLDER
Fig. 1.
Fig. 1.
CONNECTION
1
4 2
3
GATE
DRAIN
SOURCE
Solder Plating
Pre-Solder
Notes
1. ( ) : Reference dimensions.
2. The metal part is covered with
the solder plating, part of cutting
is without the solder plating.
DIMENSIONS ARE IN MILLIMETERS.
CONNECTION
1
4
2
3
GATE
DRAIN
SOURCE
Solder Plating
CONNECTION
Pre-Solder
Notes
1
2
3
1 GATE
2 DRAIN
3 SOURCE
Note: 1. Guaranteed mark of
avalanche ruggedness.
1. ( ) : Reference dimensions.
2. The metal part is covered with
the solder plating, part of cutting
is without the solder plating.
DIMENSIONS ARE IN MILLIMETERS.
Note: 1. Guaranteed mark of
avalanche ruggedness.
Note: 1. Guaranteed mark of avalanche ruggedness.
DIMENSIONS ARE IN MILLIMETERS.
4
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