IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BTA2008-600E
3Q Hi-Com Triac
28 September 2016
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT54 (TO-92) plastic package. This
"series E" triac balances the requirements of commutation performance and gate sensitivity and is
intended for interfacing with low power drivers and logic ICs including microcontrollers.
2. Features and benefits
•
•
•
•
•
•
•
3Q technology for improved noise immunity
Direct gate triggering from low power drivers and logic ICs
High commutation capability with sensitive gate
High voltage capability
Planar passivated for voltage ruggedness and reliability
Sensitive gate for easy logic level triggering
Triggering in three quadrants only
3. Applications
•
•
•
Low power motor controls
Small inductive loads e.g. solenoids, door locks, water valves
Small loads in large white goods
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
lead
≤ 70 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
0.5
0.5
Typ
-
-
-
-
-
-
-
Max
600
0.8
9
9.9
125
10
10
Unit
V
A
A
A
°C
mA
mA
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
I
GT
junction temperature
gate trigger current
Static characteristics
WeEn Semiconductors
BTA2008-600E
3Q Hi-Com Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
0.5
-
-
600
Typ
-
-
1.35
-
Max
10
12
1.6
-
Unit
mA
mA
V
V/µs
I
H
V
T
dV
D
/dt
holding current
on-state voltage
rate of rise of off-state
voltage
rate of change of
commutating current
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 0.85 A; T
j
= 25 °C;
Fig. 10
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
V
D
= 400 V; T
j
= 125 °C;
I
T(RMS)
= 0.8 A; dV
com
/dt = 10 V/µs;
gate open circuit
Dynamic characteristics
dI
com
/dt
1.6
-
-
A/ms
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
Symbol Description
T2
G
T1
main terminal 2
gate
main terminal 1
321
Simplified outline
Graphic symbol
T2
sym051
T1
G
TO-92 (SOT54)
6. Ordering information
Table 3. Ordering information
Type number
BTA2008-600E
Package
Name
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
BTA2008-600E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
28 September 2016
2 / 13
WeEn Semiconductors
BTA2008-600E
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
12
003aac117
Conditions
Min
-
Max
600
0.8
9
9.9
0.41
100
1
2
0.1
150
125
003aac115
Unit
V
A
A
A
A²s
A/µs
A
W
W
°C
°C
full sine wave; T
lead
≤ 70 °C;
Fig. 1; Fig. 2;
Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; SIN
I
G
= 20 mA
-
-
-
-
-
-
-
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
2
2
over any 20 ms period
-
-40
-
1
I
T(RMS)
(A)
10
8
I
T(RMS)
(A)
0.8
0.6
6
0.4
4
2
0
10
-2
0.2
10
-1
1
10
surge duration (s)
0
-50
0
50
100
150
T
lead
(°C)
f = 50 Hz; T
lead
= 70 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
Fig. 2. RMS on-state current as a function of lead
temperature; maximum values
BTA2008-600E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
28 September 2016
3 / 13
WeEn Semiconductors
BTA2008-600E
3Q Hi-Com Triac
P
tot
(W)
1.0
003aac118
0.8
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
α = 180°
120°
90°
60°
30°
0.6
0.4
0.2
0.0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
I
T(RMS)
(A)
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
12
I
TSM
(A)
8
003aag393
4
I
T
I
TSM
t
1/f
0
T
j(init)
= 25 °C max
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA2008-600E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
28 September 2016
4 / 13
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