d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 75 °C/W.
Document Number: 67918
S11-2524-Rev. A, 26-Dec-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR698DP
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 2.2 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 2.2 A
0.8
40
45
22
18
T
C
= 25 °C
8
10
1.2
80
90
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 50 V, R
L
= 50
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
f = 1 MHz
0.34
V
DS
= 50 V, V
GS
= 10 V, I
D
= 2.5 A
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
210
35
15
5.2
1.1
1.9
1.7
7
11
8
11
3.4
15
20
15
20
ns
Ω
8
nC
pF
V
DS
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 2.5 A
V
GS
= 6 V, I
D
= 2.3 A
V
DS
= 10 V, I
D
= 2.5 A
10
0.162
0.190
5.3
0.195
0.230
2.5
100
- 7.1
3.5
± 100
1
10
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 67918
S11-2524-Rev. A, 26-Dec-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR698DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
V
GS
= 10
V
thru 6
V
8
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
6
5
V
4
6
4
T
C
= 125 °C
2
25 °C
- 55 °C
0
2
3
V
0
0
1
2
3
4
5
6
7
8
V
DS
- Drain-to-Source
Voltage
(V)
4
V
0
1
2
3
4
5
6
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.5
320
280
R
DS(on)
- On-Resistance (Ω)
0.4
240
C - Capacitance (pF)
Transfer Characteristics
C
iss
200
160
120
80
C
oss
40
C
rss
0
20
40
60
80
V
DS
- Drain-to-Source
Voltage
(V)
100
0.3
V
GS
= 6
V
0.2
V
GS
= 10
V
0.1
0.0
0
2
4
6
8
10
I
D
- Drain Current (A)
0
On-Resistance vs. Drain Current and Gate Voltage
10
R
DS(on)
- On-Resistance (Normalized)
V
DS
= 50
V
I
D
= 2.5 A
V
GS
- Gate-to-Source
Voltage
(V)
8
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
- 50
V
GS
= 10
V
I
D
= 2.5 A
Capacitance
6
4
2
0
0
1
2
3
4
Q
g
- Total Gate Charge (nC)
5
6
- 25
0
25
50
75
100
T
J
- Junction Temperature (°C)
125
150
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 67918
S11-2524-Rev. A, 26-Dec-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR698DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
0.5
0.4
I
S
- Source Current (A)
0.3
I
D
= 2.5 A
R
DS(on)
T
J
= 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain
Voltage
(V)
0.0
0
2
4
6
8
10
V
GS
- Gate-to-Source
Voltage
(V)
T
J
= 150 °C
0.2
0.1
Source-Drain Diode Forward Voltage
3.4
3.2
40
3.0
2.8
V
GS(th)
(V)
2.6
2.4
2.2
10
2.0
1.8
- 50
I
D
= 250 μA
30
50
On-Resistance vs. Gate-to-Source Voltage
Power (W)
- 25
0
25
50
75
100
125
150
20
0
0.001
0.01
0.1
T
J
- Temperature (°C)
1
Time (s)
10
100
1000
Threshold Voltage
100
Single Pulse Power, Junction-to-Ambient
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
100 μs
1
1 ms
10 ms
100 ms
T
A
= 25
°C
1s
10 s
BVDSS Limited
0.1
DC
0.1
0.01
1
10
100
1000
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 67918
S11-2524-Rev. A, 26-Dec-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR698DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
28
24
8
I
D
- Drain Current (A)
20
Power (W)
0
25
50
75
100
125
150
6
16
12
8
2
4
0
T
C
- Case Temperature (°C)
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
4
Current Derating*
Power, Junction-to-Case
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67918
S11-2524-Rev. A, 26-Dec-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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