Bipolar Transistors - BJT 100mA 30V PNP
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | ON Semiconductor(安森美) |
| 零件包装代码 | TO-92 |
| 包装说明 | CASE 29-11, TO-226, 3 PIN |
| 针数 | 3 |
| 制造商包装代码 | CASE 29-11 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| Is Samacsys | N |
| 其他特性 | EUROPEAN PART NUMBER |
| 最大集电极电流 (IC) | 0.1 A |
| 集电极-发射极最大电压 | 30 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 180 |
| JEDEC-95代码 | TO-92 |
| JESD-30 代码 | O-PBCY-T3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | ROUND |
| 封装形式 | CYLINDRICAL |
| 峰值回流温度（摄氏度） | 240 |
| 极性/信道类型 | PNP |
| 最大功率耗散 (Abs) | 0.625 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | 30 |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 360 MHz |
| Base Number Matches | 1 |
| BC558BRL | N954-03-1K58-CA | BC558BZL1 | BC558BRL1G | BC557B | BC558BRL1 | BC557AZL1G | |
|---|---|---|---|---|---|---|---|
| 描述 | Bipolar Transistors - BJT 100mA 30V PNP | Array/Network Resistor, Bussed, Thin Film, 0.1W, 1580ohm, 50V, 0.25% +/-Tol, -25,25ppm/Cel, 2021, | Bipolar Transistors - BJT 100mA 30V PNP | Bipolar Transistors - BJT 100mA 30V PNP | Bipolar Transistors - BJT 100mA 50V PNP | Bipolar Transistors - BJT 100mA 30V PNP | Bipolar Transistors - BJT 100mA 50V PNP |
| Reach Compliance Code | not_compliant | compliant | not_compliant | unknown | unknown | not_compliant | unknown |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | - | - | 不符合 | - |
| 厂商名称 | ON Semiconductor(安森美) | - | ON Semiconductor(安森美) | ON Semiconductor(安森美) | ON Semiconductor(安森美) | ON Semiconductor(安森美) | ON Semiconductor(安森美) |
| 零件包装代码 | TO-92 | - | TO-92 | TO-92 | - | TO-92 | TO-92 |
| 包装说明 | CASE 29-11, TO-226, 3 PIN | - | CASE 29-11, TO-226, 3 PIN | LEAD FREE, CASE 29-11, TO-226, 3 PIN | CYLINDRICAL, O-PBCY-W3 | CASE 29-11, TO-226, 3 PIN | LEAD FREE, CASE 29-11, TO-226, 3 PIN |
| 针数 | 3 | - | 3 | 3 | 3 | 3 | 3 |
| 制造商包装代码 | CASE 29-11 | - | CASE 29-11 | 29-11 | 29-11 | CASE 29-11 | 29-11 |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | - | EAR99 | EAR99 |
| 其他特性 | EUROPEAN PART NUMBER | - | EUROPEAN PART NUMBER | EUROPEAN PART NUMBER | - | EUROPEAN PART NUMBER | EUROPEAN PART NUMBER |
| 最大集电极电流 (IC) | 0.1 A | - | 0.1 A | 0.1 A | - | 0.1 A | 0.1 A |
| 集电极-发射极最大电压 | 30 V | - | 30 V | 30 V | - | 30 V | 45 V |
| 配置 | SINGLE | - | SINGLE | SINGLE | - | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 180 | - | 180 | 180 | - | 180 | 120 |
| JEDEC-95代码 | TO-92 | - | TO-92 | TO-92 | - | TO-92 | TO-92 |
| JESD-30 代码 | O-PBCY-T3 | - | O-PBCY-T3 | O-PBCY-T3 | - | O-PBCY-T3 | O-PBCY-T3 |
| JESD-609代码 | e0 | e0 | e0 | e1 | - | e0 | e1 |
| 元件数量 | 1 | - | 1 | 1 | - | 1 | 1 |
| 端子数量 | 3 | 8 | 3 | 3 | - | 3 | 3 |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | - | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | ROUND | - | ROUND | ROUND | - | ROUND | ROUND |
| 封装形式 | CYLINDRICAL | SMT | CYLINDRICAL | CYLINDRICAL | - | CYLINDRICAL | CYLINDRICAL |
| 峰值回流温度（摄氏度） | 240 | - | 240 | 260 | - | 240 | 260 |
| 极性/信道类型 | PNP | - | PNP | PNP | - | PNP | PNP |
| 最大功率耗散 (Abs) | 0.625 W | - | 0.625 W | 1.5 W | - | 0.625 W | 1.5 W |
| 认证状态 | Not Qualified | - | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified |
| 表面贴装 | NO | - | NO | NO | - | NO | NO |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | Tin/Lead (Sn/Pb) | Tin/Silver/Copper (Sn/Ag/Cu) | - | Tin/Lead (Sn/Pb) | Tin/Silver/Copper (Sn/Ag/Cu) |
| 端子形式 | THROUGH-HOLE | - | THROUGH-HOLE | THROUGH-HOLE | - | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | BOTTOM | - | BOTTOM | BOTTOM | - | BOTTOM | BOTTOM |
| 处于峰值回流温度下的最长时间 | 30 | - | 30 | 40 | - | 30 | 40 |
| 晶体管应用 | AMPLIFIER | - | AMPLIFIER | AMPLIFIER | - | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | - | SILICON | SILICON | - | SILICON | SILICON |
| 标称过渡频率 (fT) | 360 MHz | - | 360 MHz | 360 MHz | - | 360 MHz | 320 MHz |
| Base Number Matches | 1 | - | 1 | 1 | - | 1 | - |
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