VS-FA72SA50LC
www.vishay.com
Vishay Semiconductors
Power MOSFET, 72 A
FEATURES
• Fully isolated package
• Easy to use and parallel
• Low on-resistance
• Dynamic dV/dt rating
• Fully avalanche rated
• Simple drive requirements
SOT-227
• Low gate charge device
• Low drain to case capacitance
• Low internal inductance
• UL approved file E78996
• Designed for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
500 V
0.0615
72 A
Modules - MOSFET
SOT-227
PRIMARY CHARACTERISTICS
V
DSS
R
DS(on)
I
D
Type
Package
DESCRIPTION
Third generation power MOSFETs from Vishay
Semiconductors provide the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SOT-227 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 600 W to 1000 W. The low thermal
resistance of the SOT-227 contribute to its wide acceptance
throughout the industry.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Continuous drain current at V
GS
10 V
Pulsed drain current
Power dissipation
Gate to source voltage
Single pulse avalanche energy
Repetitive avalanche current
Repetitive avalanche energy
Peak diode recovery dV/dt
Operating junction and storage temperature range
Insulation withstand voltage (AC-RMS)
Mounting torque
SYMBOL
I
D
I
DM
(1)
TEST CONDITIONS
T
C
= 25 °C
T
C
= 90 °C
T
C
= 25 °C
T
C
= 90 °C
MAX.
72
52
228
1136
545
± 20
725
22
120
10
-55 to +150
2.5
UNITS
A
P
D
V
GS
E
AS (2)
I
AR
E
AR
(1)
(1)
W
V
mJ
A
mJ
V/ns
°C
kV
Nm
dV/dt
(3)
T
J
, T
Stg
V
ISO
M4 screw, on terminals and heatsink
1.3
Notes
(1)
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 18)
(2)
Starting T = 25 °C, L = 500 μH, R = 2.4
,
I
J
g
AS
= 57 A (see fig. 18)
(3)
I
57 A, dI /dt
200 A/μs, V
SD
F
DD
V
(BR)DSS
, T
J
150 °C
Revision: 27-Sep-17
Document Number: 94782
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-FA72SA50LC
www.vishay.com
Vishay Semiconductors
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
Flat, greased surface
Torque to terminal
Torque to heatsink
TEST CONDITIONS
MIN.
-55
-
-
-
-
-
TYP.
-
-
0.05
30
-
-
MAX.
150
0.11
-
-
1.1 (9.7)
SOT-227
UNITS
°C
°C/W
g
Nm (lbf.in)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction and storage temperature range
Junction to case
Case to heatsink
Weight
Mounting torque
Case style
1.8 (15.9) Nm (lbf.in)
ELECTRICAL CHARACTERISTICS
(T
J
= 25 °C unless otherwise noted)
PARAMETER
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
Static drain to source on-resistance
Gate threshold voltage
Forward transconductance
Drain to source leakage current
Gate to source forward leakage
Gate to source reverse leakage
Total gate charge
Gate to source charge
Gate to drain (“Miller”) charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Internal source inductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Note
(1)
Pulse width
300 μs, duty cycle
2 %
SYMBOL
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
(1)
TEST CONDITIONS
V
GS
= 0 V, I
D
= 1.0 mA
Reference to 25 °C, I
D
= 1 mA
V
GS
= 10 V, I
D
= 34 A
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA, T
J
= 125 °C
V
DS
= 50 V, I
D
= 34 A
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 500 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 500 V, V
GS
= 0 V, T
J
= 150 °C
V
GS
= 20 V
V
GS
= - 20 V
I
D
= 60 A
V
DS
= 400 V
V
GS
= 10 V; see fig. 15 and 19
(1)
V
DD
= 250 V
I
D
= 60 A
R
g
= 2.4
L = 500 μH; diode used: 60APH06
V
DD
= 250 V
I
D
= 60 A
R
g
= 2.4
L = 500 μH; diode used: 60APH06
Between lead, and center of die contact
V
GS
= 0 V
V
DS
= 25 V
f = 1.0 MHz, see fig. 14
MIN.
500
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.64
61.5
3.0
1.9
52.5
0.5
30
0.2
-
-
225
51
98
134
44
150
43
135
47
160
35
5.0
10 000
1500
50
MAX.
-
-
80.0
4.0
-
-
50
500
3.0
200
- 200
338
77
147
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
V
V/°C
m
V
S
μA
mA
nA
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
nC
ns
ns
nH
pF
Revision: 27-Sep-17
Document Number: 94782
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-FA72SA50LC
www.vishay.com
Vishay Semiconductors
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
PARAMETER
Continuous source current (body diode)
Pulsed source current (body diode)
SYMBOL
I
S
I
SM (1)
TEST CONDITIONS
D
MIN.
-
-
S
TYP.
-
-
0.9
0.75
660
46
15
880
50
23
MAX.
72
228
1.31
-
-
-
-
-
-
-
UNITS
MOSFET symbol showing
the integral reverse p-n
junction diode.
G
A
Diode forward voltage
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Forward turn-on time
V
SD (2)
t
rr
I
rr
Q
rr
t
rr
I
rr
Q
rr
t
on
T
J
= 25 °C, I
S
= 57 A, V
GS
= 0 V
T
J
= 125 °C, I
S
= 57 A, V
GS
= 0 V
T
J
= 25 °C, I
F
= 50 A, dI
F
/dt = 100 A/μs
(2)
-
-
-
-
-
-
V
ns
A
μC
ns
A
μC
T
J
= 125 °C, I
F
= 50 A, dI
F
/dt = 100 A/μs
(2)
-
-
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+ L
D
)
Notes
(1)
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
(2)
Pulse width
300 μs, duty cycle
2 %
160
180
160
I
DS
- Drain-Source Current (A)
140
120
100
80
60
40
20
0
0
20
40
60
80
100
I
DS
- Continuous Drain-Source Current (A)
Allowable Case Temperature (°C)
140
120
V
GS
= 7 V
V
GS
= 8 V
V
GS
= 10 V
V
GS
= 12 V
V
GS
= 15 V
DC
100
80
60
40
20
0
V
GS
= 6 V
V
GS
= 5 V
0
2
4 6 8 10 12 14 16 18 20
V
DS
- Drain-to-Source Voltage (V)
Fig. 1 - Maximum DC MOSFET Drain-Source Current I
DS
(A)
Fig. 3 - Typical Drain-to-Source Output Characteristics
at T
J
= 25 °C
110
I
DS
- Drain-to-Source Current (A)
IDS - Continuous Drain-Source Current (A)
100
T
J
= 125 °C
100
90
80
70
60
50
40
30
20
10
0
0
V
GS
= 7 V
V
GS
= 8 V
V
GS
= 10 V
V
GS
= 12 V
V
GS
= 15 V
10
T
J
= 25 °C
T
J
= 150 °C
1
V
GS
= 6 V
V
GS
= 5 V
V
GS
= 10 V
0.1
0.1
1.0
V
DS
- Drain-to-Source Voltage (V)
10
2
4 6 8 10 12 14 16 18 20
V
DS
- Drain-to-Source Voltage (V)
Fig. 2 - Typical Drain-to-Source Output Characteristics
Fig. 4 - Typical Drain-to-Source Current Output Characteristics
at T
J
= 125 °C
Revision: 27-Sep-17
Document Number: 94782
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-FA72SA50LC
www.vishay.com
Vishay Semiconductors
140
I
DS
- Drain-to-Source Current (A)
100
90
I
DS
- Drain-to-Source Current (A)
80
70
60
50
40
30
20
10
0
0
2
4 6 8 10 12 14 16 18 20
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 7 V
V
GS
= 8 V
V
GS
= 10 V
V
GS
= 12 V
V
GS
= 15 V
120
100
80
60
40
20
T
J
= 25 °C
0
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
V
GS
-
Gate-to-Source
Voltage (V)
T
J
= 150 °C
T
J
= 125 °C
V
GS
= 6 V
V
GS
= 5 V
Fig. 5 - Typical Drain-to-Source Current Output Characteristics
at T
J
= 150 °C
R
DS(on)
- Drain-to-Source On-Resistance (mΩ)
200
180
160
140
120
100
80
60
40
0
20 40 60 80 100 120 140 160
T
J
- Junction Temperature (°C)
I
D
= 60 A
V
GS
= 10 V
Fig. 8 - Typical MOSFET Transfer Characteristics
10
1
T
J
= 150 °C
0.1
0.01
0.001
T
J
= 125 °C
I
DS
- Drain-to-Source Current (A)
T
J
= 25 °C
0.0001
0.00001
0
100
200
300
400
500
600
V
DS
- Drain-to-Source Voltage (V)
Fig. 6 - Typical Drain-to-Source On-Resistance vs. Temperature
Fig. 9 - Typical MOSFET Zero Gate Voltage Drain Current
I
FSD
- Forward
Source-to-Drain
Current (A)
280
240
200
160
T
J
= 150 °C
120
80
40
0
0.0
0.5
1.0
1.5
2.0
V
FSD
- Drain-to-Source Forward Voltage Drop
Characteristics (V)
T
J
= 125 °C
T
J
= 25 °C
V
GSTH
- Threshold Voltage (V)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0.20
0.40
0.60
I
D
(mA)
0.80
1.00
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
Fig. 7 - Typical Body Diode Forward Voltage Drop Characteristics
Fig. 10 - Typical MOSFET Threshold Voltage
Revision: 27-Sep-17
Document Number: 94782
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-FA72SA50LC
www.vishay.com
Vishay Semiconductors
1
t
d(on)
t
d(off)
1
Switching
time (μs)
Switching
Time (μs)
t
d(off)
t
d(on)
0.1
t
f
t
r
0.1
t
f
t
r
0.01
0
10
20
30
40
50
60
Drain-to-source current - I
ds
(A)
70
0.01
0
10
20
30
R
g
(Ω)
40
50
60
Fig. 11 - Typical MOSFET Switching Time vs. I
DS
, T
J
= 125 °C,
V
DD
= 250 V, V
GS
= 10 V, L = 500 μH, R
G
= 2.4
Diode used: 60APH06
Fig. 12 - Typical MOSFET Switching Time vs. R
g
, T
J
= 125 °C,
I
DS
= 100 A, V
DD
= 250 V, V
GS
= 10 V, L = 500 μH
Diode used: 60APH06
1
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
0.1
Notes:
0.01
0.001
0.00001
0.75
0.50
0.25
0.1
0.05
0.02
DC
0.0001
0.001
0.01
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
t
1
- Rectangular Pulse Duration (s)
Fig. 13 - Maximum Thermal Impedance Z
thJC
Characteristics, MOSFET
15 000
V
GS
-
Gate-to-Source
Voltage (V)
12 000
V
GS
C
iss
C
rss
C
oss
= 0 V,
f = 1 MHz
= C
gs
+ C
gd
,
C
ds
SHORTED
= C
gd
= C
ds
+ C
gd
20
I
D
= 57 A
16
V
DS
= 400 V
V
DS
= 250 V
V
DS
= 100 V
C - Capacitance (pF)
C
iss
9000
12
6000
C
oss
3000
8
4
FOR TEST CIRCUIT
SEE
FIGURE 19
0
60
120
180
240
300
Q
g
- Total
Gate
Charge (nC)
360
C
rss
0
1
10
100
0
V
DS
-
Drain-to-Source Voltage (V)
Fig. 14 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 15 - Typical Gate Charge vs. Gate-to-Source Voltage
Revision: 27-Sep-17
Document Number: 94782
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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