1.5V Drive Nch+Pch MOSFET
US6M11
Structure
Silicon N-channel MOSFET /
Silicon P-channel MOSFET
Dimensions
(Unit : mm)
TUMT6
SOT-363T
0.2Max.
Features
1) Nch MOSFET and Pch MOSFET are put in TUMT6 package.
2) Low on-resistance.
3) Low voltage drive (1.5V drive).
4) Built-in G-S Protection Diode.
Abbreviated symbol : M11
Applications
Switching
Inner circuit
(6)
(5)
(4)
∗1
Packaging specifications
Package
Type
US6M11
(1)
(2)
(3)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
Taping
TR
3000
∗2
∗2
Code
Basic ordering unit (pieces)
∗1
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Power dissipation
Channel temperature
Range of storage temperature
∗1
Pw≤10µs, Duty cycle≤1%
∗2
Mounted on a ceramic board.
Symbol
V
DSS
V
GSS
I
D
I
DP
∗1
I
S
I
SP
∗1
P
D
∗2
Tch
Tstg
Continuous
Pulsed
Continuous
Pulsed
Limits
Unit
Tr1 : Nchannel Tr2 : Pchannel
20
V
−12
±10
±10
V
±1.5
±1.3
A
±6
±5.2
A
0.5
−0.5
A
6
−5.2
A
1.0
W / TOTAL
0.7
150
−55
to
+150
W / ELEMENT
°C
°C
Thermal resistance
Parameter
Channel to ambient
∗
Mounted on a ceramic board
Symbol
Rth(ch-a)
∗
Limits
125
179
Unit
°C/W
/ TOTAL
°C/W
/ ELEMENT
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2009 ROHM Co., Ltd. All rights reserved.
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2009.07 - Rev.A
US6M11
<N-ch>
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
Gate-source leakage
I
GSS
Drain-source breakdown voltage V
(BR) DSS
I
DSS
Zero gate voltage drain current
Gate threshold voltage
V
GS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
Data Sheet
R
DS (on)
∗
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
∗
∗
∗
∗
∗
∗
∗
∗
Min.
−
20
−
0.3
−
−
−
−
1.6
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
130
170
220
300
−
110
18
15
5
5
20
3
1.8
0.3
0.3
Max.
±10
−
1
1.0
180
240
310
600
−
−
−
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
V
GS
= ±10V, V
DS
=0V
I
D
= 1mA, V
GS
=0V
V
DS
= 20V, V
GS
=0V
V
DS
= 10V, I
D
= 1mA
I
D
= 1.5A, V
GS
= 4.5V
I
D
= 1.5A, V
GS
= 2.5V
I
D
= 0.8A, V
GS
= 1.8V
I
D
= 0.3A, V
GS
= 1.5V
V
DS
= 10V, I
D
= 1.5A
V
DS
= 10V
V
GS
=0V
f=1MHz
V
DD
10V
I
D
= 1A
V
GS
= 4.5V
R
L
10Ω
R
G
=10Ω
V
DD
10V, V
GS
= 4.5V
I
D
= 1.5A
R
L
6.7Ω, R
G
= 10Ω
Body diode characteristics
(Source-drain) (Ta=25°C)
Parameter
Forward voltage
∗Pulsed
Symbol
V
SD
∗
Min.
−
Typ.
−
Max.
1.2
Unit
V
Conditions
I
S
= 1.5A, V
GS
=0V
<P-ch>
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
Gate-source leakage
I
GSS
Drain-source breakdown voltage V
(BR) DSS
I
DSS
Zero gate voltage drain current
Gate threshold voltage
V
GS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
R
DS (on)
∗
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
∗
∗
∗
∗
∗
∗
∗
∗
Min.
−
−12
−
−0.3
−
−
−
−
1.4
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
190
280
400
530
−
290
28
21
8
10
30
9
2.4
0.6
0.4
Max.
±10
−
−1
−1.0
260
390
600
1060
−
−
−
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
V
GS
=
±10
V, V
DS
=0V
I
D
=
−1mA,
V
GS
=0V
V
DS
=
−12V,
V
GS
=0V
V
DS
=
−6V,
I
D
=
−1mA
I
D
=
−1.3A,
V
GS
=
−4.5V
I
D
=
−0.6A,
V
GS
=
−2.5V
I
D
=
−0.6A,
V
GS
=
−1.8V
I
D
=
−0.2A,
V
GS
=
−1.5V
V
DS
=
−6V,
I
D
=
−1.3A
V
DS
=
−6V
V
GS
= 0V
f=1MHz
V
DD
−6
V
I
D
=
−0.6A
V
GS
=
−4.5V
R
L
10Ω
R
G
= 10Ω
V
DD
−6V,
V
GS
=
−4.5V
I
D
=
−1.3A
R
L
4.6Ω, R
G
= 10Ω
Body diode characteristics
(Source-drain) (Ta=25°C)
Parameter
Forward voltage
∗Pulsed
Symbol
V
SD
∗
Min.
−
Typ.
−
Max.
−1.2
Unit
V
Conditions
I
S
=
−1.3A,
V
GS
=0V
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2009 ROHM Co., Ltd. All rights reserved.
2/7
2009.07 - Rev.A
US6M11
Electrical characteristic curves
<Nch>
1.5
DRAIN CURRENT : I
D
[A]
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 2.5V
1
V
GS
= 1.8V
V
GS
= 1.5V
Ta=25°C
Pulsed
DRAIN CURRENT : I
D
[A]
1.5
V
GS
= 4.5V
V
GS
= 1.8V
V
GS
= 1.5V
1
Ta=25°C
Pulsed
DRAIN CURRENT : I
D
[A]
10
V
DS
= 10V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
Data Sheet
1
0.1
0.5
V
GS
= 1.3V
0.5
V
GS
= 1.1V
V
GS
= 1.3V
0.01
V
GS
= 1.2V
0
0
0.2
0.4
0.6
0.8
1
0
0
2
4
6
8
10
0.001
0
0.5
1
1.5
2
DRAIN-SOURCE VOLTAGE : V
DS
[V]
Fig.1 Typical Output Characteristics(
Ⅰ
)
DRAIN-SOURCE VOLTAGE : V
DS
[V]
Fig.2 Typical Output Characteristics(
Ⅱ
)
GATE-SOURCE VOLTAGE : V
GS
[V]
Fig.3 Typical Transfer Characteristics
10000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[m
Ω
]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[m
Ω
]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[m
Ω
]
Ta= 25°C
Pulsed
10000
V
GS
= 1.5V
V
GS
= 1.8V
V
GS
= 2.5V
V
GS
= 4.5V
V
GS
= 4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10000
V
GS
= 2.5V
Pulsed
1000
1000
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
100
100
10
0.01
0.1
1
10
10
0.01
0.1
1
10
10
0.01
0.1
1
10
DRAIN-CURRENT : I
D
[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅰ
)
DRAIN-CURRENT : I
D
[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅱ
)
DRAIN-CURRENT : I
D
[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅲ
)
10000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[m
Ω
]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[m
Ω
]
V
GS
= 1.8V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10000
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
V
GS
= 1.5V
Pulsed
10
1000
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
V
DS
= 10V
Pulsed
1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
100
100
10
0.01
0.1
1
10
10
0.01
0.1
1
10
0.1
0.01
0.1
1
10
DRAIN-CURRENT : I
D
[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅳ
)
DRAIN-CURRENT : I
D
[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅴ
)
DRAIN-CURRENT : I
D
[A]
Fig.9 Forward Transfer Admittance
vs. Drain Current
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2009 ROHM Co., Ltd. All rights reserved.
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2009.07 - Rev.A
US6M11
10
REVERSE DRAIN CURRENT : Is [A]
V
GS
=0V
Pulsed
600
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[m
Ω
]
500
I
D
= 0.8A
400
I
D
= 1.5A
300
200
100
t
r
0
0
0.5
1
1.5
0
2
4
6
8
10
1
0.01
0.1
1
10
Ta=25°C
Pulsed
SWITCHING TIME : t [ns]
1000
Ta=25°C
V
DD
= 10V
V
GS
=4.5V
R
G
=10Ω
Pulsed
Data Sheet
t
d
(off)
100
t
f
1
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
t
d
(on)
0.01
SOURCE-DRAIN VOLTAGE : V
SD
[V]
Fig.10 Reverse Drain Current
vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE : V
GS
[V]
Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
DRAIN-CURRENT : I
D
[A]
Fig.12 Switching Characteristics
5
GATE-SOURCE VOLTAGE : V
GS
[V]
1000
CAPACITANCE : C [pF]
4
Ta=25°C
f=1MHz
V
GS
=0V
Ciss
3
100
Coss
Crss
2
Ta=25°C
V
DD
= 10V
I
D
= 1.5A
R
G
=10Ω
Pulsed
0
0.5
1
1.5
2
1
0
10
0.01
0.1
1
10
100
TOTAL GATE CHARGE : Qg [nC]
Fig.13 Dynamic Input Characteristics
DRAIN-SOURCE VOLTAGE : V
DS
[V]
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
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2009.07 - Rev.A
US6M11
<Pch>
2
DRAIN CURRENT : -I
D
[A]
Ta=25°C
Pulsed
2
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -2.5V
V
GS
= -1.8V
1
V
GS
= -1.5V
0.5
V
GS
= -1.2V
V
GS
= -4.5V
V
GS
= -2.5V
V
GS
= -1.8V
Ta=25°C
Pulsed
DRAIN CURRENT : -I
D
[A]
10
V
DS
= -6V
Pulsed
Data Sheet
1.5
DRAIN CURRENT : -I
D
[A]
1.5
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
1
V
GS
= -1.5V
V
GS
= -1.2V
0.1
0.5
V
GS
= -1.0V
0.01
0
0
0.2
0.4
0.6
0.8
1
0
0
2
4
6
8
10
0.001
0
0.5
1
1.5
2
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.1 Typical output characteristics(
Ⅰ
)
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.2 Typical output characteristics(
Ⅱ
)
GATE-SOURCE VOLTAGE : -V
GS
[V]
Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[m
Ω
]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[m
Ω
]
Ta=25°C
Pulsed
V
GS
= -4.5V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[m
Ω
]
10000
10000
10000
V
GS
= -2.5V
Pulsed
1000
1000
1000
100
V
GS
= -1.5V
V
GS
= -1.8V
V
GS
= -2.5V
V
GS
= -4.5V
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.1
1
10
10
0.01
0.1
1
10
10
0.01
0.1
1
10
10
0.01
DRAIN-CURRENT : -I
D
[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅰ
)
DRAIN-CURRENT : -I
D
[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅱ
)
DRAIN-CURRENT : -I
D
[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅲ
)
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
10000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[m
Ω
]
1000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[m
Ω
]
V
GS
= -1.8V
Pulsed
10000
10
V
DS
= -6V
Pulsed
V
GS
= -1.5V
Pulsed
1000
1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
0.01
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
0.01
0.1
1
10
10
0.01
0.1
1
10
0.1
1
10
DRAIN-CURRENT : -I
D
[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅳ
)
DRAIN-CURRENT : -I
D
[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅳ
)
DRAIN-CURRENT : -I
D
[A]
Fig.9 Forward Transfer Admittance
vs. Drain Current
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2009.07 - Rev.A
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