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BD241

产品描述Bipolar Transistors - BJT 40W NPN Silicon
产品类别分立半导体    晶体管   
文件大小59KB,共4页
制造商Bourns
官网地址http://www.bourns.com
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BD241概述

Bipolar Transistors - BJT 40W NPN Silicon

BD241规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Bourns
零件包装代码TO-220AB
包装说明FLANGE MOUNT, R-PSFM-T3
针数3
Reach Compliance Codecompliant
ECCN代码EAR99
外壳连接COLLECTOR
最大集电极电流 (IC)3 A
集电极-发射极最大电压45 V
配置SINGLE
最小直流电流增益 (hFE)10
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型NPN
最大功率耗散 (Abs)40 W
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON

文档预览

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BD241, BD241A, BD241B, BD241C
NPN SILICON POWER TRANSISTORS
Designed for Complementary Use with the
BD242 Series
40 W at 25°C Case Temperature
3 A Continuous Collector Current
5 A Peak Collector Current
Customer-Specified Selections Available
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BD241
Collector-emitter voltage (R
BE
= 100
Ω)
BD241A
BD241B
BD241C
BD241
Collector-emitter voltage (I
C
= 30 mA)
BD241A
BD241B
BD241C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
½LI
C
2
T
j
T
stg
T
L
V
CEO
V
CER
SYMBOL
VALUE
55
70
90
115
45
60
80
100
5
3
5
1
40
2
32
-65 to +150
-65 to +150
250
V
A
A
A
W
W
mJ
°C
°C
°C
V
V
UNIT
This value applies for t
p
0.3 ms, duty cycle
10%.
Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 0.4 A, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= 20 V.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1

BD241相似产品对比

BD241 BD241C BD241C-S BD241B-S BD241-S BD241A-S BD241B
描述 Bipolar Transistors - BJT 40W NPN Silicon Bipolar Transistors - BJT 40W NPN Silicon Bipolar Transistors - BJT 100V 3A NPN Bipolar Transistors - BJT 80V 3A NPN Bipolar Transistors - BJT 45V 3A NPN Bipolar Transistors - BJT 60V 3A NPN Bipolar Transistors - BJT 40W NPN Silicon
是否Rohs认证 不符合 不符合 符合 符合 符合 符合 不符合
厂商名称 Bourns Bourns Bourns Bourns Bourns Bourns Bourns
Reach Compliance Code compliant compliant unknown not_compliant not_compliant unknown compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最大集电极电流 (IC) 3 A 3 A 3 A 3 A 3 A 3 A 3 A
配置 SINGLE SINGLE Single SINGLE SINGLE Single SINGLE
最小直流电流增益 (hFE) 10 10 10 10 10 10 10
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
极性/信道类型 NPN NPN NPN NPN NPN NPN NPN
最大功率耗散 (Abs) 40 W 40 W 40 W 40 W 40 W 40 W 40 W
表面贴装 NO NO NO NO NO NO NO
是否无铅 含铅 含铅 - 不含铅 不含铅 - 含铅
零件包装代码 TO-220AB TO-220AB - TO-220AB TO-220AB - TO-220AB
包装说明 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 - FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 - FLANGE MOUNT, R-PSFM-T3
针数 3 3 - 3 3 - 3
外壳连接 COLLECTOR COLLECTOR - COLLECTOR COLLECTOR - COLLECTOR
集电极-发射极最大电压 45 V 100 V - 80 V 45 V - 80 V
JEDEC-95代码 TO-220AB TO-220AB - TO-220AB TO-220AB - TO-220AB
JESD-30 代码 R-PSFM-T3 R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3 - R-PSFM-T3
元件数量 1 1 - 1 1 - 1
端子数量 3 3 - 3 3 - 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR - RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
认证状态 Not Qualified Not Qualified - Not Qualified Not Qualified - Not Qualified
端子形式 THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE
端子位置 SINGLE SINGLE - SINGLE SINGLE - SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING - SWITCHING SWITCHING - SWITCHING
晶体管元件材料 SILICON SILICON - SILICON SILICON - SILICON
Base Number Matches - - 1 1 1 1 1

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