74AHC1GU04
UNBUFFERED SINGLE INVERTER GATE
Description
The 74AHC1GU04 is a single inverter gate with a standard
totem pole output. The device is designed for operation with
a power supply range of 2.0V to 5.5V. The inverter can be
used in analog circuits such as crystal oscillators.
Pin Assignments
(Top View)
NC
1
5 Vcc
A 2
NEW PRODUCT
GND 3
4 Y
SOT25 / SOT353
Features
•
•
•
•
•
•
•
•
•
•
Supply Voltage Range from 2.0V to 5.5V
± 6 mA Output Drive at 5.0V
CMOS low power consumption
Unbuffered Output
ESD Protection Exceeds JESD 22
200-V Machine Model (A115-A)
2000-V Human Body Model (A114-A)
Latch-Up Exceeds 100mA per JESD 78, Class II
SOT25 and SOT353: Assembled with “Green” Molding
Compound (no Br, Sb)
Lead Free Finish / RoHS Compliant (Note 1)
Applications
•
•
Crystal Oscillators, Analog Inverters
Wide array of products such as.
o
o
o
o
o
PCs, networking, notebooks, netbooks, PDAs
Computer peripherals, hard drives, CD/DVD ROM
TV, DVD, DVR, set top box
Personal Navigation / GPS
MP3 players ,Cameras, Video Recorders
Notes:
1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at
http://www.diodes.com/products/lead_free.html.
74AHC1GU04
Document number: DS35178 Rev. 1 - 2
1 of 8
www.diodes.com
March 2011
© Diodes Incorporated
74AHC1GU04
UNBUFFERED SINGLE INVERTER GATE
Pin Descriptions
Pin Name
NC
A
GND
Y
V
CC
Pin NO.
1
2
3
4
5
No Connection
Data Input
Ground
Data Output
Supply Voltage
Description
NEW PRODUCT
Logic Diagram
A
2
4
Y
Function Table
Inputs
A
H
L
Output
Y
L
H
74AHC1GU04
Document number: DS35178 Rev. 1 - 2
2 of 8
www.diodes.com
March 2011
© Diodes Incorporated
74AHC1GU04
UNBUFFERED SINGLE INVERTER GATE
Absolute Maximum Ratings
(Note 2)
Symbol
ESD HBM
ESD MM
V
CC
V
I
V
O
Description
Human Body Model ESD Protection
Machine Model ESD Protection
Supply Voltage Range
Input Voltage Range
Voltage applied to output in high or low state
Input Clamp Current V
I
<0
Output Clamp Current (V
O
< 0 or V
O
> V
CC
)
Continuous output current (V
O
= 0 to V
CC
)
Continuous current through V
CC
Continuous current through GND
Operating Junction Temperature
Storage Temperature
Rating
2
200
-0.5 to 6.5
-0.5 to 6.5
-0.5 to V
CC
+0.5
-20
±20
±25
50
-50
-40 to 150
-65 to 150
Unit
KV
V
V
V
V
mA
mA
mA
mA
mA
°C
°C
NEW PRODUCT
I
IK
I
OK
I
O
I
CC
I
GND
T
J
T
STG
Notes:
2. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device operation should be
within recommend values.
Recommended Operating Conditions
(Note 3)
Symbol
V
CC
V
IH
Operating Voltage
V
CC
= 2V
High-level Input Voltage
V
CC
= 3V
V
CC
= 5.5V
V
CC
= 2V
V
IL
V
I
V
O
I
OH
Low-level input voltage
Input Voltage
Output Voltage
V
CC
= 2V
High-level output current
V
CC
= 3.3V ± 0.3V
V
CC
= 5V ± 0.5V
V
CC
= 2V
I
OL
Low-level output current
Operating free-air
temperature
V
CC
= 5V ± 0.5V
V
CC
= 3V
T
A
Notes:
Parameter
Min
2
1.7
2.4
4.4
Max
5.5
Unit
V
V
0.3
0.6
1.1
0
0
5.5
V
CC
-50
-3
-6
50
3
6
-40
85
V
V
uA
mA
uA
mA
ºC
V
V
CC
= 3V
V
CC
= 5.5V
3. Unused inputs should be held at V
CC
or Ground.
74AHC1GU04
Document number: DS35178 Rev. 1 - 2
3 of 8
www.diodes.com
March 2011
© Diodes Incorporated
74AHC1GU04
UNBUFFERED SINGLE INVERTER GATE
Electrical Characteristics
Symbol
Parameter
Test Conditions
V
CC
2V
3V
4.5V
3V
4.5V
2V
3V
4.5V
3V
4.5V
0 to 5.5V
5.5V
5.5V
2.0
195
(Note 4)
SOT353
SOT25
(Note 4)
SOT353
155
430
58
o
V
OH
High Level
Output
Voltage
I
OH
= -50μA
I
OH
= -3mA
I
OH
= -6mA
I
OL
= 50μA
I
OL
= 3mA
I
OL
= 6mA
V
I
= 5.5V or GND
V
I
= 5.5V or GND
I
O
=0
V
I
= V
CC
– or GND
SOT25
Min
1.8
2.7
4.0
2.58
3.94
25ºC
Typ.
2
3
4.5
Max
NEW PRODUCT
V
OL
Low Level
Output
Voltage
Input Current
Supply
Current
Input
Capacitance
Thermal
Resistance
Junction-to-
Ambient
Thermal
Resistance
Junction-to-
Case
0.2
0.3
0.5
0.36
0.36
± 0.1
1
10
-40ºC to 85ºC
Min
Max
1.75
2.65
3.9
2.5
3.8
0.2
0.3
0.5
0.44
0.44
±1
10
10
-40ºC to 125ºC
Min
Max
1.75
2.65
3.9
2.5
3.8
0.2
0.3
0.5
0.55
0.55
±2
40
10
Unit
V
V
I
I
I
CC
C
I
θ
JA
μA
μA
pF
o
C/W
θ
JC
Note:
C/W
4. Test conditions for SOT25, and SOT353: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
Switching Characteristics
V
CC
= 3.3V ± 0.3
(see Figure 1)
Parameter
t
pd
From
TO
(Input) (OUTPUT)
A
Y
C
L
=15pF
C
L
=50pF
Min
0.6
0.6
25ºC
Typ.
3.4
4.9
Max
7.1
10.6
-40ºC to 85ºC
Min
Max
0.6
0.6
8.5
12.0
-40ºC to 125ºC
Min
Max
0.6
0.6
10.0
13.0
Unit
ns
ns
V
CC
= 5V ± 0.5V
(see Figure 1)
Parameter
t
pd
From
TO
(Input) (OUTPUT)
A
Y
C
L
=15pF
C
L
=50pF
Min
0.6
0.6
25ºC
Typ.
2.6
3.6
Max
5.5
7.0
-40ºC to 85ºC
Min
Max
0.6
0.6
6.0
8.0
-40ºC to 125ºC
Min
Max
0.6
0.6
7.0
9.0
Unit
ns
ns
74AHC1GU04
Document number: DS35178 Rev. 1 - 2
4 of 8
www.diodes.com
March 2011
© Diodes Incorporated
74AHC1GU04
UNBUFFERED SINGLE INVERTER GATE
Operating Characteristics
T
A
= 25 ºC
Parameter
C
pd
Power dissipation capacitance
Test
Conditions
f = 1 MHz
No Load
V
CC
= 5V
Typ.
8
Unit
pF
NEW PRODUCT
Parameter Measurement Information
V
CC
3.3V±0.3V
5V±0.5V
3.3V±0.3V
5V±0.5V
Inputs
V
I
V
CC
V
CC
V
CC
V
CC
t
r
/t
f
≤3ns
≤3ns
≤3ns
≤3ns
V
M
V
CC
/2
V
CC
/2
V
CC
/2
V
CC
/2
C
L
15pF
15pF
50pF
50pF
Voltage Waveform Pulse Duration
Voltage Waveform Propagation Delay Times
Inverting and Non Inverting Outputs
Figure 1. Load Circuit and Voltage Waveforms
Notes:
A. Includes test lead and test apparatus capacitance.
B. All pulses are supplied at pulse repetition rate
≤
1 MHz.
C. Inputs are measured separately one transition per measurement.
D. t
PLH
and t
PHL
are the same as t
PD
.
5 of 8
www.diodes.com
March 2011
© Diodes Incorporated
74AHC1GU04
Document number: DS35178 Rev. 1 - 2
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