AUTOMOTIVE GRADE
PD - 97732
AUIRFZ48N
Features
l
l
l
l
l
l
l
l
l
HEXFET
®
Power MOSFET
D
Advanced Planar Technology
Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed
up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified*
V
(BR)DSS
R
DS(on)
typ.
max
I
D
55V
11m
14m
69A
G
S
D
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs uti-
lizes the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for, pro-
vides the designer with an extremely efficient and reli-
able device for use in Automotive and a wide variety of
other applications.
G
D
S
TO-220AB
AUIRFZ48N
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise
specified.
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Max.
69
49
270
160
1.1
± 20
265
290
See Fig.12a, 12b, 15, 16
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
°C
Ã
h
d
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf in (1.1N m)
Thermal Resistance
R
JC
R
CS
R
JA
Junction-to-Case
y
y
i
Parameter
Typ.
–––
0.50
–––
Max.
0.95
–––
62
Units
°C/W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
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1
10/3/11
AUIRFZ48N
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
55
–––
–––
2.0
24
–––
–––
–––
–––
–––
0.054
11
–––
–––
–––
–––
–––
–––
–––
–––
14
4.0
–––
25
250
100
-100
Conditions
V V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 1.0mA
m V
GS
= 10V, I
D
= 40A
V V
DS
= V
GS
, I
D
= 100μA
S V
DS
= 10V, I
D
= 40A
μA
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 20V
V
GS
= -20V
e
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
42
9.0
17
12
62
37
37
4.5
7.5
1900
470
120
2180
340
610
63
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
I
D
= 40A
V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
I
D
= 40A
R
G
= 7.6
V
GS
= 10V
Conditions
e
e
D
G
S
ns
nH
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
pF
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
f
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
69
A
270
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 40A, V
GS
= 0V
T
J
= 25°C, I
F
= 40A, V
DD
= 28V
Ã
–––
–––
1.3
V
–––
71
110
ns
–––
230
345
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
e
e
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.24mH
R
G
= 50, I
AS
= 40A, V
GS
=10V. Part not
recommended for use above this value.
Pulse width
1.0ms; duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the
same charging time as C
oss
while V
DS
is rising
from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population, starting
T
J
= 25°C, L = 0.24mH, R
G
= 50, I
AS
= 40A, V
GS
=10V.
R
is measured at T
J
approximately 90°C.
2
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AUIRFZ48N
†
Qualification Information
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
TO-220
AEC-Q101-002
N/A
Class M3 (+/- 400V)
†††
Class H1C (+/- 1500V)
†††
AEC-Q101-001
Class C5 (+/- 2000V)
†††
AEC-Q101-005
Yes
Moisture Sensitivity Level
Machine Model
Human Body Model
Charged Device Model
RoHS Compliant
ESD
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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AUIRFZ48N
1000
TOP
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
1000
TOP
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
5.0V
10
5.0V
10
60μs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
1
0.1
1
60μs PULSE WIDTH
Tj = 175°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
50
Gfs, Forward Transconductance (S)
T J = 25°C
40
T J = 175°C
30
ID, Drain-to-Source Current (A)
100
T J = 175°C
10
20
1
T J = 25°C
VDS = 25V
60μs
PULSE WIDTH
10
V DS = 10V
380μs PULSE WIDTH
0.1
0
2
4
6
8
10
12
14
16
0
0
20
40
60
80
ID,Drain-to-Source Current (A)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
1000
Fig 4.
Typical Forward Transconductance vs. Drain Current
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 67A
2.0
ISD, Reverse Drain Current (A)
VGS = 10V
T J = 175°C
100
T J = 25°C
10
1.5
1.0
VGS = 0V
1.0
0.2
0.6
1.0
1.4
1.8
2.2
VSD, Source-to-Drain Voltage (V)
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
Fig 5.
Typical Source-Drain Diode Forward Voltage
Fig 6.
Normalized On-Resistance vs. Temperature
4
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AUIRFZ48N
100000
10000
C, Capacitance (pF)
C oss = C ds + C gd
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
14.0
ID= 40A
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 44V
VDS= 28V
VDS= 11V
1000
Coss
Crss
Ciss
100
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0
5
10 15 20 25 30 35 40 45 50
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
1msec
Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
70
60
ID, Drain Current (A)
ID, Drain-to-Source Current (A)
100
50
40
30
20
10
0
10
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
1
10
DC
100
25
50
75
100
125
150
175
VDS, Drain-toSource Voltage (V)
T C , Case Temperature (°C)
Fig 9.
Maximum Safe Operating Area
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Maximum Drain Current vs. Case Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
0.01
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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