MMBF4391L, MMBF4392L,
MMBF4393L
JFET Switching Transistors
N−Channel
Features
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3
1
2
SOT−23
CASE 318
STYLE 10
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Drain−Source Voltage
Drain−Gate Voltage
Gate−Source Voltage
Forward Gate Current
Symbol
V
DS
V
DG
V
GS
I
G(f)
Value
30
30
30
50
Unit
Vdc
Vdc
Vdc
mAdc
1 DRAIN
Symbol
P
D
Max
225
1.8
556
−55
to +150
Unit
mW
mW/°C
°C/W
°C
1
XXX = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
3
GATE
2 SOURCE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
MARKING DIAGRAM
R
qJA
T
J
, T
stg
XXX M
G
G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0
0.75
0.062 in.
MARKING & ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 1994
October, 2016
−
Rev. 12
1
Publication Order Number:
MMBF4391LT1/D
MMBF4391L, MMBF4392L, MMBF4393L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(I
G
= 1.0
mAdc,
V
DS
= 0)
Gate Reverse Current
(V
GS
= 15 Vdc, V
DS
= 0, T
A
= 25°C)
(V
GS
= 15 Vdc, V
DS
= 0, T
A
= 100°C)
Gate−Source Cutoff Voltage
(V
DS
= 15 Vdc, I
D
= 10 nAdc)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
Off−State Drain Current
(V
DS
= 15 Vdc, V
GS
=
−12
Vdc)
(V
DS
= 15 Vdc, V
GS
=
−12
Vdc, T
A
= 100°C)
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current
(V
DS
= 15 Vdc, V
GS
= 0)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
Drain−Source On−Voltage
(I
D
= 12 mAdc, V
GS
= 0)
MMBF4391LT1
(I
D
= 6.0 mAdc, V
GS
= 0)
MMBF4392LT1
(I
D
= 3.0 mAdc, V
GS
= 0)
MMBF4393LT1
Static Drain−Source On−Resistance
(I
D
= 1.0 mAdc, V
GS
= 0)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
SMALL− SIGNAL CHARACTERISTICS
Input Capacitance
(V
DS
= 0 Vdc, V
GS
=
−15
Vdc, f = 1.0 MHz)
Reverse Transfer Capacitance
(V
DS
= 0 Vdc, V
GS
=
−12
Vdc, f = 1.0 MHz)
C
iss
C
rss
−
−
14
3.5
pF
pF
I
DSS
50
25
5.0
V
DS(on)
−
−
−
r
DS(on)
−
−
−
30
60
100
0.4
0.4
0.4
W
150
75
30
Vdc
mAdc
V
(BR)GSS
I
GSS
30
−
Vdc
Symbol
Min
Max
Unit
−
−
1.0
0.20
nAdc
mAdc
Vdc
V
GS(off)
−4.0
−2.0
−0.5
I
D(off)
−
−
−10
−5.0
−3.0
1.0
1.0
nAdc
mAdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device
MMBF4391LT1G
SMMBF4391LT1G*
MMBF4392LT1G
MMBF4393LT1G
SMMBF4393LT1G*
Marking
6J
6J
6K
M6G
M6G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
Package
Shipping
†
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MMBF4391L, MMBF4392L, MMBF4393L
TYPICAL CHARACTERISTICS
1000
t d(on) , TURN-ON DELAY TIME (ns)
500
200
100
50
20
10
5.0
2.0
1.0
0.5 0.7 1.0
R
K
= 0
R
K
= R
D'
T
J
= 25°C
MMBF4391
MMBF4392
MMBF4393
V
GS(off)
= 12 V
= 7.0 V
= 5.0 V
1000
500
200
t r , RISE TIME (ns)
100
50
20
10
5.0
2.0
1.0
0.5 0.7 1.0
R
K
= 0
R
K
= R
D'
T
J
= 25°C
MMBF4391
MMBF4392
MMBF4393
V
GS(off)
= 12 V
= 7.0 V
= 5.0 V
2.0 3.0 5.0 7.0 10
I
D
, DRAIN CURRENT (mA)
20
30
50
2.0 3.0 5.0 7.0 10
I
D
, DRAIN CURRENT (mA)
20
30
50
Figure 1. Turn−On Delay Time
Figure 2. Rise Time
1000
500
t f , FALL TIME (ns)
200
100
50
20
10
5.0
2.0
1.0
0.5 0.7 1.0
R
K
= 0
t d(off) , TURN-OFF DELAY TIME (ns)
1000
500
200
100
50
20
10
5.0
2.0
1.0
0.5 0.7 1.0
R
K
= 0
R
K
= R
D'
T
J
= 25°C
MMBF4391
MMBF4392
MMBF4393
V
GS(off)
= 12 V
= 7.0 V
= 5.0 V
R
K
= R
D'
T
J
= 25°C
MMBF4391
MMBF4392
MMBF4393
V
GS(off)
= 12 V
= 7.0 V
= 5.0 V
2.0 3.0 5.0 7.0 10
I
D
, DRAIN CURRENT (mA)
20
30
50
2.0 3.0 5.0 7.0 10
20
I
D
, DRAIN CURRENT (mA)
30
50
Figure 3. Turn−Off Delay Time
Figure 4. Fall Time
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3
MMBF4391L, MMBF4392L, MMBF4393L
NOTE 1
V
DD
R
D
SET V
DS(off)
= 10 V
INPUT
R
K
R
GG
50
W
V
GG
R
T
OUTPUT
R
GEN
50
W
V
GEN
INPUT PULSE
t
r
≤
0.25 ns
t
f
≤
0.5 ns
PULSE WIDTH = 2.0
ms
DUTY CYCLE
≤
2.0%
50
W
R
GG
> R
K
R
D'
= R
D
(R
T
+ 50)
R
D
+ R
T
+ 50
Figure 5. Switching Time Test Circuit
The switching characteristics shown above were measured using
a test circuit similar to Figure 5. At the beginning of the switching
interval, the gate voltage is at Gate Supply Voltage (−V
GG
). The
Drain−Source Voltage (V
DS
) is slightly lower than Drain Supply
Voltage (V
DD
) due to the voltage divider. Thus Reverse Transfer
Capacitance (C
rss
) of Gate−Drain Capacitance (C
gd
) is charged to
V
GG
+ V
DS
.
During the turn−on interval, Gate−Source Capacitance (C
gs
)
discharges through the series combination of R
Gen
and R
K
. C
gd
must
discharge to V
DS(on)
through R
G
and R
K
in series with the parallel
combination of effective load impedance (R’
D
) and Drain−Source
Resistance (r
DS
). During the turn−off, this charge flow is reversed.
Predicting turn−on time is somewhat difficult as the channel
resistance r
DS
is a function of the gate−source voltage. While C
gs
discharges, V
GS
approaches zero and r
DS
decreases. Since C
gd
discharges through r
DS
, turn−on time is non−linear. During turn−off,
the situation is reversed with r
DS
increasing as C
gd
charges.
The above switching curves show two impedance conditions; 1)
R
K
is equal to R
D’
which simulates the switching behavior of
cascaded stages where the driving source impedance is normally the
load impedance of the previous stage, and 2) R
K
= 0 (low
impedance) the driving source impedance is that of the generator.
V fs , FORWARD TRANSFER ADMITTANCE (mmhos)
20
MMBF4392
15
MMBF4391
10
C, CAPACITANCE (pF)
7.0
5.0
3.0
2.0
1.5
1.0
0.03 0.05 0.1
C
gs
10
MMBF4393
7.0
5.0
3.0
2.0
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
50
T
channel
= 25°C
V
DS
= 15 V
C
gd
T
channel
= 25°C
(C
ds
is negligible
0.3 0.5
1.0
3.0 5.0
10
30
I
D
, DRAIN CURRENT (mA)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 6. Typical Forward Transfer Admittance
r DS(on), DRAIN-SOURCE ON-STATE
RESISTANCE (NORMALIZED)
200
r DS(on), DRAIN-SOURCE ON-STATE
RESISTANCE (OHMS)
I
DSS
25 mA
= 10
160
mA
50 mA
75 mA 100 mA
125 mA
Figure 7. Typical Capacitance
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-70
-40
-10
20
50
80
110
140
170
I
D
= 1.0 mA
V
GS
= 0
120
80
40
T
channel
= 25°C
0
0
1.0
2.0
3.0
5.0
4.0
6.0
7.0
V
GS
, GATE-SOURCE VOLTAGE (VOLTS)
8.0
T
channel
, CHANNEL TEMPERATURE (°C)
Figure 8. Effect of Gate−Source Voltage
on Drain−Source Resistance
Figure 9. Effect of Temperature on Drain−Source
On−State Resistance
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4
MMBF4391L, MMBF4392L, MMBF4393L
NOTE 2
r DS(on) , DRAIN-SOURCE ON-STATE
RESISTANCE (OHMS)
100
90
80
70
60
50
40
30
T
channel
= 25°C
10
9.0
8.0
7.0
6.0
V
GS(off)
r
DS(on)
@ V
GS
= 0
5.0
4.0
3.0
20
2.0
10
1.0
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
I
DSS
, ZERO-GATE VOLTAGE DRAIN CURRENT (mA)
Figure 10. Effect of I
DSS
on Drain−Source
Resistance and Gate−Source Voltage
The Zero−Gate−Voltage Drain Current (I
DSS
) is the
principle determinant of other J−FET characteristics.
Figure 10 shows the relationship of Gate−Source Off
Voltage (V
GS(off)
) and Drain−Source On Resistance
(r
DS(on)
) to I
DSS
. Most of the devices will be within
±10%
of the values shown in Figure 10. This data will
be useful in predicting the characteristic variations for
a given part number.
For example:
Unknown
r
DS(on)
and V
GS
range for an MMBF4392
The electrical characteristics table indicates that an
MMBF4392 has an I
DSS
range of 25 to 75 mA. Figure
10 shows r
DS(on)
= 52
W
for I
DSS
= 25 mA and 30
W
for
I
DSS
= 75 mA. The corresponding V
GS
values are 2.2 V
and 4.8 V.
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5
V GS , GATE-SOURCE VOLTAGE
(VOLTS)
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