Schottky barrier diodes are designed primarily for high−efficiency
UHF and VHF detector applications. Readily available to many other
fast switching RF and digital applications. They are housed in the
SOT−323/SC−70 package which is designed for low−power surface
mount applications.
Features
http://onsemi.com
SC−70/SOT−323
CASE 419
1
3
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
Available in 8 mm Tape and Reel
AEC Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Reverse Voltage
MMBD330T1G, SMMBD330T1G
MMBD770T1G, SMMBD770T1G
Forward Continuous Current (DC)
Nonrepetitive Peak Forward Current
(Note 1)
Forward Power Dissipation
T
A
= 25C
Junction Temperature
Storage Temperature Range
Symbol
V
R
Value
30
70
200
1.0
Unit
Vdc
MARKING DIAGRAMS
XX M
G
G
1
XX
4T
5H
M
G
= Specific Device Code
= MMBD330T1
= MMBD770T1
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon the manufacturing location.
I
F
I
FSM
P
F
T
J
T
stg
mA
A
mW
C
C
ORDERING INFORMATION
Device
Package
SC−70
(Pb−Free)
SC−70
(Pb−Free)
SC−70
(Pb−Free)
SC−70
(Pb−Free)
Shipping
†
3,000/T
ape & Reel
3,000/T
ape & Reel
3,000/T
ape & Reel
3,000/T
ape & Reel
MMBD330T1G
SMMBD330T1G
MMBD770T1G
SMMBD770T1G
120
−55
to +125
−55
to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 60 Hz Halfsine.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
November, 2011
−
Rev. 6
1
Publication Order Number:
MMBD330T1/D
MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
= 10
mA)
MMBD330T1G, SMMBD330T1G
MMBD770T1G, SMMBD770T1G
Diode Capacitance
(V
R
= 15 Volts, f = 1.0 MHZ)
MMBD330T1G, SMMBD330T1G
(V
R
= 20 Volts, f = 1.0 MHZ)
MMBD770T1G, SMMBD770T1G
Reverse Leakage
(V
R
= 25 V)
MMBD330T1G, SMMBD330T1G
(V
R
= 35 V)
MMBD770T1G, SMMBD770T1G
Forward Voltage
(I
F
= 1.0 mAdc)
MMBD330T1G, SMMBD330T1G
(I
F
= 10 mA)
(I
F
= 1.0 mAdc)
MMBD770T1G, SMMBD770T1G
(I
F
= 10 mA)
Symbol
V
(BR)R
30
70
C
T
−
−
I
R
−
−
V
F
−
−
−
−
0.38
0.52
0.42
0.70
0.45
0.60
0.50
1.0
13
9.0
200
200
Vdc
0.9
0.5
1.5
1.0
nAdc
−
−
−
−
pF
Min
Typ
Max
Unit
Volts
http://onsemi.com
2
MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G
TYPICAL CHARACTERISTICS
MMBD330T1G, SMMBD330T1G
2.8
CT, TOTAL CAPACITANCE (pF)
2.4
2.0
1.6
1.2
0.8
0.4
0
f = 1.0 MHz
t
, MINORITY CARRIER LIFETIME (ps)
MMBD330T1
500
MMBD330T1
400
KRAKAUER METHOD
300
200
100
0
0
3.0
6.0
9.0
12
15
18
21
V
R
, REVERSE VOLTAGE (VOLTS)
24
27
30
0
10
20
30
50
70
40
60
I
F
, FORWARD CURRENT (mA)
80
90
100
Figure 1. Total Capacitance
Figure 2. Minority Carrier Lifetime
10
MMBD330T1
1.0
T
A
= 100C
100
MMBD330T1
IF, FORWARD CURRENT (mA)
T
A
= - 40C
10
T
A
= 85C
IR, REVERSE LEAKAGE (
m
A)
T
A
= 75C
0.1
0.01
T
A
= 25C
1.0
T
A
= 25C
0.001
0
6.0
12
18
V
R
, REVERSE VOLTAGE (VOLTS)
24
30
0.1
0.2
0.4
0.6
0.8
V
F
, FORWARD VOLTAGE (VOLTS)
1.0
1.2
Figure 3. Reverse Leakage
Figure 4. Forward Voltage
http://onsemi.com
3
MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G
TYPICAL CHARACTERISTICS
MMBD770T1G, SMMBD770T1G
2.0
CT, TOTAL CAPACITANCE (pF)
f = 1.0 MHz
1.6
t
, MINORITY CARRIER LIFETIME (ps)
MMBD770T1
500
MMBD770T1
400
KRAKAUER METHOD
300
1.2
0.8
200
0.4
100
0
0
0
5.0
10
15
20
25
30
35
V
R
, REVERSE VOLTAGE (VOLTS)
40
45
50
0
10
20
30
40
50
60
70
I
F
, FORWARD CURRENT (mA)
80
90
100
Figure 5. Total Capacitance
Figure 6. Minority Carrier Lifetime
10
MMBD770T1
1.0
T
A
= 100C
100
MMBD770T1
IF, FORWARD CURRENT (mA)
IR, REVERSE LEAKAGE (
m
A)
10
T
A
= 85C
T
A
= - 40C
T
A
= 75C
0.1
1.0
T
A
= 25C
0.01
T
A
= 25C
0.001
0
10
20
30
V
R
, REVERSE VOLTAGE (VOLTS)
40
50
0.1
0.2
0.4
0.8
1.2
V
F
, FORWARD VOLTAGE (VOLTS)
1.6
2.0
Figure 7. Reverse Leakage
Figure 8. Forward Voltage
http://onsemi.com
4
MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
D
e1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
A1
A2
b
c
D
E
e
e1
L
H
E
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
3
H
E
1
2
E
b
e
A
0.05 (0.002)
A1
A2
L
c
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under
its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,
or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of
personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your loca
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
