provides for repeatable electrical characteristics. This
diode is fabricated on epitaxial wafers using a process
designed for extremely low parasitics. The diode is
fully passivated with silicon nitride to minimize leakage
current. The chip also has an additional polymer layer
for impact and scratch protection to prevent damage
to the active area during handling.
Applications
The small outline and low 0.05pS RC product, make
the device useful in multi-throw switches and switched
phase shifter circuits requiring <20nS switching
speeds at operating frequencies up to 18GHz.
Backside metal contacts: 0.1μm thick gold.
Yellow hatched areas indicate backside, mounting,
ohmic, gold contacts.
Absolute Maximum Ratings
1
T
AMB
= +25°C (unless otherwise specified)
Parameter
Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Dissipated Power
RF plus DC
Mounting Temperature
Absolute Maximum
100mA
- 70V
- 55°C to + 125°C
- 55°C to + 150°C
100mW
+300°C for 10 seconds
Inches
Dim.
A
B
C
D
E
F
G
Millimeters
Max.
Min.
0.356
0.203
0.102
0.076
0.175
0.203
0.102
Min.
0.014
0.008
0.004
0.003
0.002
0.008
0.004
Max.
0.381
0.229
0.127
0.102
0.225
0.254
0.152
0.015
0.009
0.005
0.004
0.003
0.010
0.006
1. Exceeding any of these limits may cause permanent
damage to the chip.
1
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MA4FCP200
Flip Chip PIN Diode
Rev. V5
Electrical Specifications @ T
AMB
+25°C
Parameters @ Conditions
Total Capacitance @ -40V, 1MHz
1
Total Capacitance @ -40V, 1GHz
1,3
Series Resistance @ +50mA
2,3
, 100MHz
Series Resistance @ +50mA
2,3
, 1GHz
Forward Voltage @ +100mA
Reverse Voltage @ -10μA
Reverse Current @ -70V
Lifetime @ I
F
= +10mA / I
REV
= -6mA
Steady State Thermal Resistance
4
Symbol
C
T
C
T
R
S
R
S
V
F
V
R
I
R
T
L
θ
Units
pF
pF
V
V
μA
Min.
——
——
——
——
——
-70
——
——
——
Typ.
0.025
0.020
2.4
2.8
1.25
——
——
100
900
Max.
0.030
——
3.0
——
1.5
——
-10
——
——
nS
°C/W
1. Total capacitance is equivalent to the sum of junction capacitance, Cj, plus the die parasitic capacitance, Cp.
2. The series resistance, R
S,
is equal to the total diode resistance which also includes the resistance of the
junction, Rj.
3. Rs and Cp measured on an HP4291A with die mounted in an ODS-186 package.
4. Steady-state Thermal Resistance measured with die mounted in an ODS-186 package.
186
ESD
These devices very susceptible to ESD and are rated Class 0 (0-199V) per HBM MIL-STD-883, method 3015.7
[C = 100pF ±10%, R = 1.5kW ±1%]. Even though die survived ESD testing to 100V , they should be handled in a
static free environment.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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for additional data sheets and product information.
For further information and support please visit:
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MA4FCP200
Flip Chip PIN Diode
Rev. V5
Typical Performance @ T
AMB
+25°C
MA4FCP200 Rs vs I
1000.0
Rs_50 MHz
Rs_100 MHz
Rs_500 MHz
100.0
Rs ( Ohms )
10.0
1.0
0.01
0.10
1.00
10.00
100.00
I ( mA )
MA4FCP200 Rs vs Frequency
5
10mA
4
50mA
Rs ( Ohms )
3
2
100mA
1
0
0
200
400
F ( MHz )
600
800
1000
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4FCP200
Flip Chip PIN Diode
Rev. V5
Typical Performance @ T
AMB
+25°C
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
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MA4FCP200
Flip Chip PIN Diode
Rev. V5
Handling Procedures
All semiconductor chips should be handled with care to avoid damage or contamination from perspiration and skin
oils. The use of plastic tipped tweezers or vacuum pickups is strongly recommended for individual components.
Bulk handling should insure that abrasion and mechanical shock are minimized.
Bonding Techniques
These devices were designed for insertion onto hard or soft substrates with the junction (pad) side down. They
can be mounted with electrically conductive epoxy or with a eutectic solder preform. However,
tin rich solders
will scavenge gold from the bottom contacts and are not recommended. Indalloy or 80/20, Au/Sn, solders
are acceptable. Maximum soldering temperature must be <300°C for <10 sec. These chips are designed to
be inserted onto hard or soft substrates with the junction side down. They should be mounted onto silk-
screened circuits using electrically conductive Ag epoxy, approximately 1-2 mils in thickness and cured at
approximately 90°C to 150°C per manufacturer’s schedule. For extended cure times, >30 minutes,
temperatures must be kept below 200°C.
The die can also be assembled using non conductive epoxy with the
junction side up, and wire or ribbon bonds made to the pads.
PCB Land Pattern
Ordering Information
Part Number
MA4FCP200
MA4FCP200-W
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.