MMSZ5225-G to MMSZ5267-G
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Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Silicon planar Zener diodes
• Standard Zener voltage tolerance is ± 5 % with
a “B” suffix (e.g.: MMSZ5225B-G), suffix “C” is
± 2 % tolerance
• AEC-Q101 qualified available (part number on
request)
• ESD capability according to AEC-Q101:
Human body model > 8 kV
Machine model > 800 V
• Base P/N-G3 - green, commercial grade
Models
Available
DESIGN SUPPORT TOOLS
click logo to get started
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Circuit configuration
VALUE
3 to 75
1.7 to 20
Thermal equilibrium
Single
UNIT
V
mA
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
MMSZ5225B-G3-08 to MMSZ5267B-G3-08
3000 (8 mm tape on 7" reel)
MMSZ5225-G to
MMBZ5267-G
MMSZ5225C-G3-08 to MMSZ5267C-G3-08
MMSZ5225B-G3-18 to MMSZ5267B-G3-18
10 000 (8 mm tape on 13" reel)
MMSZ5225C-G3-18 to MMSZ5267C-G3-18
10 000/box
15 000/box
TAPED UNITS PER REEL
MINIMUM ORDER
QUANTITY
PACKAGE
PACKAGE NAME
SOD-123
WEIGHT
10.3 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
SOLDERING CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Zener current
Thermal resistance junction to ambient air
Junction temperature, maximum
Storage temperature range
Operating temperature range
TEST CONDITION
On FR - 4 or FR - 5 board with minimum
recommended solder pad layout
See table “Electrical Characteristics”
On FR - 4 or FR - 5 board with minimum
recommended solder pad layout
R
thJA
T
j
T
stg
T
op
340
150
-65 to +175
-55 to +150
K/W
°C
°C
°C
SYMBOL
P
tot
VALUE
500
UNIT
mW
Rev. 1.3, 10-Jan-18
Document Number: 83387
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MMSZ5225-G to MMSZ5267-G
www.vishay.com
Vishay Semiconductors
REVERSE
LAEKAGE
CURRENT
I
R
at V
R
μA
MAX.
V
MAX.
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
MARKING
CODE
PART NUMBER
±2%
±5%
ZENER VOLTAGE
RANGE
(1)
V
Z
at I
ZT1
V
NOM.
TEST
CURRENT
I
ZT1
mA
I
ZT2
DYNAMIC
RESISTANCE
(2)
Z
Z
at I
ZT1
Z
ZK
at I
ZT2
MAX.
TEMPERATURE
COEFFICIENT
VZ
%/°C
TYP.
MMSZ5225-G
C.0
C0
3
20
0.25
50
1
30
1600
-0.075
MMSZ5226-G
D.6
D6
3.3
20
0.25
25
1
28
1600
-0.07
MMSZ5227-G
D.7
D7
3.6
20
0.25
15
1
24
1700
-0.065
MMSZ5228-G
D.8
D8
3.9
20
0.25
10
1
23
1900
-0.06
MMSZ5229-G
D.9
D9
4.3
20
0.25
5
1
22
2000
-0.055
MMSZ5230-G
D.0
D0
4.7
20
0.25
5
2
19
1900
± 0.030
MMSZ5231-G
E.6
E6
5.1
20
0.25
5
2
17
1600
± 0.030
MMSZ5232-G
E.7
E7
5.6
20
0.25
5
3
11
1600
0.038
MMSZ5233-G
E.8
E8
6
20
0.25
5
3.5
7
1600
0.038
MMSZ5234-G
E.9
E9
6.2
20
0.25
5
4
7
1000
0.045
MMSZ5235-G
E.0
E0
6.8
20
0.25
3
5
5
750
0.05
MMSZ5236-G
F.6
F6
7.5
20
0.25
3
6
6
500
0.058
MMSZ5237-G
F.7
F7
8.2
20
0.25
3
6.5
8
500
0.062
MMSZ5238-G
F.8
F8
8.7
20
0.25
3
6.5
8
600
0.065
MMSZ5239-G
F.9
F9
9.1
20
0.25
3
7
10
600
0.068
MMSZ5240-G
F.0
F0
10
20
0.25
3
8
17
600
0.075
MMSZ5241-G
H.6
H6
11
20
0.25
2
8.4
22
600
0.076
MMSZ5242-G
H.7
H7
12
20
0.25
1
9.1
30
600
0.077
MMSZ5243-G
H.8
H8
13
9.5
0.25
0.5
9.9
13
600
0.079
MMSZ5244-G
H.9
H9
14
9
0.25
0.1
10
15
600
0.082
MMSZ5245-G
H.0
H0
15
8.5
0.25
0.1
11
16
600
0.082
MMSZ5246-G
J.6
J6
16
7.8
0.25
0.1
12
17
600
0.083
MMSZ5247-G
J.7
J7
17
7.4
0.25
0.1
13
19
600
0.084
MMSZ5248-G
J.8
J8
18
7
0.25
0.1
14
21
600
0.085
MMSZ5249-G
J.9
J9
19
6.6
0.25
0.1
14
23
600
0.086
MMSZ5250-G
J.0
J0
20
6.2
0.25
0.1
15
25
600
0.086
MMSZ5251-G
K.6
K6
22
5.6
0.25
0.1
17
29
600
0.087
MMSZ5252-G
K.7
K7
24
5.2
0.25
0.1
18
33
600
0.087
MMSZ5253-G
K.8
K8
25
5
0.25
0.1
19
35
600
0.089
MMSZ5254-G
K.9
K9
27
4.6
0.25
0.1
21
41
600
0.09
MMSZ5255-G
K.0
K0
28
4.5
0.25
0.1
21
44
600
0.091
MMSZ5256-G
M.6
M6
30
4.2
0.25
0.1
23
49
600
0.091
MMSZ5257-G
M.7
M7
33
3.8
0.25
0.1
25
58
700
0.092
MMSZ5258-G
M.8
M8
36
3.4
0.25
0.1
27
70
700
0.093
MMSZ5259-G
M.9
M9
39
3.2
0.25
0.1
30
80
800
0.094
MMSZ5260-G
M.0
M0
43
3
0.25
0.1
33
93
900
0.095
MMSZ5261-G
N.6
N6
47
2.7
0.25
0.1
36
105
1000
0.095
MMSZ5262-G
N.7
N7
51
2.5
0.25
0.1
39
125
1100
0.096
MMSZ5263-G
N.8
N8
56
2.2
0.25
0.1
43
150
1300
0.096
MMSZ5264-G
N.9
N9
60
2.1
0.25
0.1
46
170
1400
0.097
MMSZ5265-G
N.0
N0
62
2
0.25
0.1
47
185
1400
0.097
MMSZ5266-G
P.6
P6
68
1.8
0.25
0.1
52
230
1600
0.097
MMSZ5267-G
P.7
P7
75
1.7
0.25
0.1
56
270
1700
0.098
Notes
• Maximum V
F
= 0.9 V, at I
F
= 10 mA
(1)
Measured with device junction in thermal equilibrium
(2)
The Zener impedance is derived from the 1 kHz AC voltage which results when an AC current having an RMS value equal to 10 % of the
Zener current (I
ZT1
or I
ZT2
) is superimposed on I
ZT1
or I
ZT2
. Zener Impedance is measured at two points to insure a sharp knee on the
breakdown curve and to eliminate unstable units
Rev. 1.3, 10-Jan-18
Document Number: 83387
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MMSZ5225-G to MMSZ5267-G
www.vishay.com
Vishay Semiconductors
Axis Title
10000
50
45
40
1000
1st line
2nd line
2nd line
I
Z
(mA)
35
30
25
20
15
10
5
MMSZ5240
MMSZ5241
MMSZ5242
MMSZ5243
MMSZ5244
MMSZ5245
MMSZ5246
Axis Title
10
9
8
7
2nd line
I
Z
(mA)
6
5
4
3
2
1
0
0
20
40
60
80
100
10
MMSZ5264
MMSZ5265
MMSZ5266
MMSZ5262
MMSZ5263
10000
1000
1st line
2nd line
100
10
10
V
Z
(V)
2nd line
15
20
Axis Title
10000
1000
100
10
4
V
Z
(V)
2nd line
6
8
10
Axis Title
10000
1000
1st line
2nd line
100
10
3
V
Z
(V)
2nd line
4
5
6
2
1st line
2nd line
100
MMSZ5267
0
0
5
V
Z
(V)
2nd line
Fig. 1 - Breakdown Characteristics
Axis Title
20
18
16
14
2nd line
I
Z
(mA)
12
10
8
6
4
2
0
0
20
V
Z
(V)
2nd line
40
60
MMSZ5253
MMSZ5254
MMSZ5255
MMSZ5256
MMSZ5257
MMSZ5258
Fig. 4 - Breakdown Characteristics
10000
100
90
80
MMSZ5231
MMSZ5232
MMSZ5233
MMSZ5234
MMSZ5235
MMSZ5236
MMSZ5237
MMSZ5238
MMSZ5239
1000
1st line
2nd line
2nd line
I
Z
(mA)
70
60
50
40
30
20
10
100
MMSZ5259
MMSZ5260
MMSZ5261
10
0
0
2
Fig. 2 - Breakdown Characteristics
Axis Title
30
25
MMSZ5247
Fig. 5 - Breakdown Characteristics
10000
200
180
160
MMSZ5225
MMSZ5226
MMSZ5227
MMSZ5228
MMSZ5229
MMSZ5230
20
2nd line
I
Z
(mA)
15
10
5
0
0
MMSZ5248
MMSZ5249
MMSZ5250
MMSZ5251
MMSZ5252
1000
1st line
2nd line
2nd line
I
Z
(mA)
140
120
100
80
60
40
20
100
10
5
10
15
V
Z
(V)
2nd line
20
25
30
0
0
1
Fig. 3 - Breakdown Characteristics
Fig. 6 - Breakdown Characteristics
Rev. 1.3, 10-Jan-18
Document Number: 83387
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MMSZ5225-G to MMSZ5267-G
www.vishay.com
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-123
0.1 (0.004) max.
Vishay Semiconductors
1.35 (0.053)
8°
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Cathode
bar
2.85 (0.112)
2.55 (0.100)
0.15 (0.006)
0.10 (0.004)
1 (0.039)
0.2 (0.008)
0° to
Mounting Pad Layout
0.85 (0.033)
0.85 (0.033)
0.65 (0.026)
0.45 (0.018)
3.85 (0.152)
3.55 (0.140)
1.40 (0.055)
1.7 (0.067)
2.5 (0.098)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Rev. 1.3, 10-Jan-18
Document Number: 83387
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
0.85 (0.033)
Legal Disclaimer Notice
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Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000