T4 series
4 A Triacs
Datasheet
production data
.
Table 1. Main characteristics
Symbol
I
T(rms)
V
DRM
, V
RRM
I
GT
Value
4
600 to 800
5 to 35
Unit
A
V
mA
Table 2. Device summary
Symbol
(1)
T405-xxxB
T405-xxxB-TR
T405-xxxH
T405-xxxT
T410-xxxB
Marking
Features
Three quadrants Triac
600 to 800 V V
DRM
/V
RRM
T410-xxxB-TR
see
Table 11
T410-xxxH
T410-xxxT
T435-xxxB
T435-xxxB-TR
T435-xxxH
T435-xxxT
1. xxx = Voltage: 600 V, 700 V or 800 V (see
Table 10).
Applications
General purpose AC inductive loads
Motor control circuits
Small home appliances
Description
Based on ST’s Snubberless / logic level
technology providing high commutation
performances, the T4 series is suitable for use on
AC inductive loads. They are recommended for
applications using universal motors, electro
valves, kitchen aid equipments, power tools, and
dishwashers.
November 2016
This is information on a product in full production.
DocID7699 Rev 9
1/15
www.st.com
15
Characteristics
T4 series
1
Characteristics
Table 3. Absolute maximum ratings (T
j
= 25 °C unless otherwise stated)
Symbol
I
T(rms)
I
TSM
I
²
t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
On-state rms current
(full sine wave)
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25 °C)
I
²
t value for fusing
Critical rate of rise of on-state
current I
G
= 2 x I
GT
, t
r
≤
100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
F = 120 Hz
t
p
= 20 µs
Parameter
IPAK, DPAK,
TO-220AB
Value
T
c
= 110 °C
t = 20 ms
t = 16.7 ms
t
p
= 10 ms
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
4
30
Unit
A
F = 50 Hz
F = 60 Hz
A
31
5.1
50
4
1
- 40 to +150
- 40 to +125
A
²
s
A/µs
A
W
°C
Table 4. Electrical characteristics (T
j
= 25 °C, unless otherwise stated)
Value
Symbol
I
GT(1)
V
GT
V
GD
I
H (2)
I
L
dV/dt
(2)
Test conditions
V
D
= 12 V, R
L
= 30
Ω
V
D
= 12 V, R
L
= 30
Ω
V
D
= V
DRM
, R
L
= 3.3 k
Ω
, T
j
= 125 °C
I
T
= 100 mA
I - III
I
G
= 1.2 I
GT
V
D
= 67% V
DRM
, gate open
(dV/dt)c = 0.1 V/µs
(dI/dt)c
(2)
(dV/dt)c = 10 V/µs
(without snubber)
1. Minimum I
GT
is guaranteed at 5% of I
GT
max.
2. For both polarities of A2 referenced to A1
Unit
Quadrant
T405 T410 T435
I - II - III
I - II - III
I - II - III
Max.
Max.
Min.
Max.
Max.
Max.
Min.
10
10
15
20
1.8
T
j
= 125 °C
Min.
0.9
5
10
1.3
0.2
15
25
30
40
2.7
2.0
2.5
A/ms
35
50
mA
II
T
j
= 125 °C
60
400
V/µs
35
mA
V
V
mA
2/15
DocID7699 Rev 9
T4 series
Table 5. Static characteristics
Symbol
V
TM (1)
V
t0 (1)
R
d (1)
I
DRM
I
RRM
Test conditions
I
TM
= 5.5 A, t
p
= 380 µs
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
Max.
Max.
Max.
Max.
Characteristics
Value
1.56
0.89
120
5
1
Unit
V
V
m
µA
mA
1. For both polarities of A2 referenced to A1
Table 6. Thermal resistance
Symbol
R
th(j-c)
Junction to case (AC)
Junction to ambient
R
th(j-a)
Junction to ambient
IPAK
1. S = Copper surface under tab.
Parameter
IPAK, DPAK,TO-220AB
S
(1)
= 0.5 cm²
DPAK
TO-220AB
Value
2.6
70
60
100
Unit
°C/W
°C/W
°C/W
°C/W
DocID7699 Rev 9
3/15
Characteristics
T4 series
Figure 1. Maximum power dissipation versus
RMS on-state current (full cycle)
P(W)
6
5
4
3
2
1
Figure 2. RMS on-state current versus case
temperature (full cycle)
I
T(RMS)
(A)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Figure 3. RMS on-state current versus ambient
temperature (printed circuit board FR4, copper
thickness: 35µm) (full cycle)
Figure 4. Relative variation of thermal
impedance versus pulse duration
Figure 5. On-state characteristics
(maximum values)
I
TM
(A)
30.0
T
j
max.
V
to
= 0.90V
R
d
= 120 m
Ω
Figure 6. Surge peak on-state current versus
number of cycles
I
TSM
(A)
35
30
t=20ms
10.0
25
20
T
j
= T
j
max.
Non repetitive
T
j
initial=25°C
Repetitive
T
C
=110°C
One cycle
1.0
15
T
j
= 25°C.
10
5
V
TM
(V)
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
1
10
Number of cycles
100
1000
4/15
DocID7699 Rev 9
T4 series
Characteristics
Figure 7. Non-repetitive surge peak on-state
current for a sinusoidal pulse
with width t
p
< 10 ms
Figure 8. Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
I
GT
,I
H
,I
L
[T
j
] / I
GT
,I
H
,I
L
[T
j
=25°C]
2.5
2.0
I
GT
1.5
I
H
& I
L
1.0
0.5
T
j
(°C)
0.0
-40
-20
0
20
40
60
80
100
120
140
Figure 9. Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
1.0
10.0
100.0
T405
T410
T435
Figure 10. Relative variation of critical rate of
decrease of main current versus junction
temperature
(dI/dt)c [T
j
] / (dI/dt)c [T
j
specified]
6
5
4
3
2
1
(dV/dt)c (V/µs)
0
0
25
50
T
j
(°C)
75
100
125
Figure 11. DPAK thermal resistance junction to ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35 µm)
R
th(j-a)
(°C/W)
100
90
80
70
60
50
40
30
20
10
0
0
4
8
12
16
20
24
28
32
36
40
S(cm²)
DocID7699 Rev 9
5/15
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