Half-Bridge Controller with Primary MOSFET Drivers for
Intermediate Bus Converters
DESCRIPTION
SiP11206 is a controller for the primary side of a half-bridge
intermediate bus converter (IBC). It is ideally suited for
isolated applications such as telecom, data communications
and other products requiring an IBC architecture and
conversion of standard bus voltages such as 48 V to a lower
intermediate voltage, where high efficiency is required at low
output voltages (24 V, 12 V, 9 V or 5 V).
Designed to operate within the telecom voltage range of
36 V to 75 V and withstand 100 V transients for a period of
100 ms, the IC is designed for controlling and driving both
the low- and high-side switching devices of a half-bridge
converter.
The SiP11206 operates with a fixed duty cycle to provide the
highest efficiency over a wide input voltage range. SiP11206
has advanced current monitoring and control circuitry, which
allows the user to set the maximum current in the primary
circuit. This feature acts as protection against overcurrent,
output short circuit. Current sensing is by means of a sense
resistor connected in series with the primary low-side
MOSFET.
FEATURES
• 36 V to 75 V input voltage range
• Withstand 100 V, 100 ms transient capability
• Integrated ± 1.6 A typical high- and low-side MOSFET
drivers
• Oscillator frequency is programmable from 200 kHz to
1 MHz and can be externally synchronized
• High voltage pre-regulator operates during start-up
• Current sensing on primary low-side switch
• Hiccup mode
• System low input voltage detection
• Chip UVLO function
• Programmable soft-start function
• Over temperature protection (160 °C)
•
Greater than 95 % efficiency
APPLICATIONS
•
•
•
•
•
Intermediate bus architectures
Telecom and Datacom
Routers and servers
Storage area network
Base station
•
1/8 and 1/4 bricks
TYPICAL APPLICATION CIRCUIT
Vin+
36 V to 75 V
100 V/100 ms
Vin-
Si2303BDS
1
2
3
4
5
6
7
8
V
INDET
V
IN
V
CC
COMP
CS
AGND
V
REF
R
OSC
SiP11206
BST
DH
LX
DL
PGND
SS
R
DB
C
OSC
16
Si7848DP
15
14
13
12
11
10
9
Si7456DP
Si7456DP
Vo+
Si7848DP
Vo-
R
DB
Document Number: 69232
S-81795-Rev. C, 04-Aug-08
Si2303BDS
www.vishay.com
1
SiP11206
Vishay Siliconix
TECHNICAL DESCRIPTION
SiP11206 is a switching controller on the primary side of a
half-bridge intermediate bus converter. With 100 V depletion
mode MOSFET in the chip, the SiP11206 is capable of being
powered directly from the high voltage bus to V
CC
through an
external PNP pass transistor, or may be powered by an
external supply directly to the V
CC
pin.
Without the use of an external pass transistor, failure of the
converter output to power V
CC
above the V
REG
level will
result in over temperature protection activating hiccup
operation whenever the pre-regulator power dissipation
becomes excessive. The external high- and low-side
N-Channel power MOSFETs are driven by a built in driver
with ± 1.6 A peak current capability.
SiP11206 is available in the MLP44-16 PowerPAK
®
package
and TSSOP-16 PowerPAK
®
package and is specified over
the ambient temperature range of - 40 °C to + 85 °C
SIP11206 BLOCK DIAGRAM
V
IN
V
REG
COMP
Pre Reg
V
CC
UVLO
+
V
SD
Level
Shift
BST
DH
-
V
INDET
V
REF
BG
AGND
SS
I
DSS
+
+
-
V
UV
+
V
CC
-
I
SS
V
UV
Hi-side driver
Driver
Control
EN
LX
0.85
V
SS
-
+
250 mV
SS Comp
DL
Le
Low-side driver
EN
OTP
4.8
V
CS
Over Current protection
D
MAX
EN
PWM Comp
Ramp
PGND
I
DSS
0.13
V
Le
EN
V
REF
OSC
EN
EN
I
BIAS
I
SS
I
BIAS
V
REF
0.200
V
R
OSC
R
DB
C
OSC
www.vishay.com
2
Document Number: 69232
S-81795-Rev. C, 04-Aug-08
SiP11206
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
all voltages referenced to GND = 0 V
Parameter
V
IN
, V
LX
V
CC
V
BST
V
BST -
V
LX
Logic Inputs
Linear Inputs
HV Pre-Regulator Input Current (continuous)
Storage Temperature
Maximum Junction Temperature
Power Dissipation
Thermal Impedance (Θ
JA
)
PowerPAK MLP44-16
a ,b
PowerPAK TSSOP-16
a, c
PowerPAK MLP44-16
a ,b
PowerPAK TSSOP-16
a, c
Continuous
100 ms
Continuous
100 ms
Limit
80
100
14.5
95
112
15
- 0.3 to V
CC
+ 0.3
- 0.3 to V
CC
+ 0.3
10
- 65 to 150
150
2564
2630
39
38
mA
°C
mW
°C/W
V
Unit
Notes:
a. Device mounted with all leads soldered or welded to PC board.
b. Derate 25.6 mW/°C above 25 °C.
c. Derate 26.3 mW/°C above 25 °C.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
all voltages referenced to GND = 0 V
Parameter
V
IN
V
BST
V
BST
- V
LX
V
CC
Logic Inputs
Linear Inputs
F
OSC
R
OSC
C
OSC
C
SS
C
COMP
V
REF
Capacitor to GND
C
BOOST
V
CC
Capacitor to GND
Continuous
100 ms
Limit
36 to 75
100
V
IN
+ 10.5 to V
IN
+ 13.2
10.5 to 13.2
10.5 to 13.2
- 0.3 to V
CC
+ 0.3
- 0.3 to V
CC
+ 0.3
200 to 1000
40 to 200
100 to 220
10 to 100
2.2
1
0.1
4.7
µF
kHz
kΩ
pF
nF
V
Unit
Document Number: 69232
S-81795-Rev. C, 04-Aug-08
www.vishay.com
3
SiP11206
Vishay Siliconix
SPECIFICATIONS
Test Conditions
Unless Otherwise Specified
T
A
= - 40 °C to
+
85 °C, F
OSC
= 800 kHz,
10.5 V
≤
V
CC
≤
13.2 V, V
INDET
= 4.8 V, V
IN
= 48 V,
R
DB
= 47.5 kΩ, R
OSC
= 47.5 kΩ, C
OSC
= 100 pF
Limits
Parameter
Pre-Regulator
V
IN
Range
Pre-Reg Current (cut-off)
Pre-Reg Current (standby)
Pre-Reg Current (switching)
Pre-Reg Output Voltage
Pre-Reg Drive Current
Pre-Reg Load Regulation
Pre-Reg Line Regulation
Regulator Compensation
V
CC
Supply Voltage
V
CC
Range
Shut Down Current
Quiescent Current
Supply Current
UVLO Off-Threshold
Hysteresis
V
CC
Clamp Voltage
Current Sense
Current Limit Threshold 1 (MOC)
a
Current Limit Threshold 2 (SOC)
b
CS to DL Delay
Leading Edge Blanking Period
Pulse Width Modulator
Maximum Duty Cycle
c
Maximum Duty Cycle Asymmetry
R
DB
Voltage
Oscillator
Oscillator Frequency
d
Oscillator Bias Voltage
Soft Start
Soft Start Charging Current
SS Ramp Completion Voltage
MOC Discharge Current
SOC Discharge Current
Reset Voltage
Reference
Output Voltage
Short Circuit Current
Load Regulation
Symbol
V
IN
I
VINLKG
I
VINSD
I
VINSW
V
REG
I
START
LDR
LNR
I
SRC
I
SNK
V
CC
I
SD
I
Q
I
CC
UVLO
H
H
UVLO
V
CLAMP
V
MOC
V
SOC
T
D
T
BL
D
MAX
V
RDB
F
OSC
V
ROSC
I
SS
V
SS
I
DSS1
I
DSS2
V
SSL
V
REF
I
REFSC
ΔV
R
/ΔI
R
Min.
36
Typ.
48
90
Max.
75
10
200
8.7
10.4
Unit
V
µA
mA
V
mA
mV
%/V
V
IN
= 75 V, V
CC
> 10.5 V
V
IN
= 75 V, V
INDET
= 0 V
V
IN
= 75 V, V
INDET
= 7.5 V
V
CC
Voltage with V
IN
= 48 V
V
CC
< V
REG
I
LOAD
: 0 to 20 mA
- 35
40
10.5
V
INDET
= 0 V
V
INDET
< V
REF
V
INDET
> V
REF
V
CC
rising
Force 20 mA into V
CC
I
SS
= 20 µA, C
SS
= 1 nF
I
SS
= 400 nA, C
SS
= 1 nF
DL
(ON)
blanking time
50
4.0
5.5
7.6
14
105
165
3.3
7.8
20
100
0.05
V
CC
= 12 V
- 20
87
12
150
5.0
7.2
9.0
1.2
15.3
130
200
150
20
47
1
3.18
R
OSC
= 47 kΩ, C
OSC
= 100 pF
680
800
3.24
V
SS
= 0 V
CS = V
MOC
CS = V
SOC
CS < V
MOC
V
CC
= 12 V
V
REF
= 0 V
(0 mA
≤
I
LOAD
≤
2.5 mA)
3.2
- 50
- 33
- 26
14
- 20
5.4
20
400
0.25
3.3
- 42
- 16
6.0
9.3
- 10
130
13.2
350
6.2
9.5
10
µA
V
µA
mA
V
16.2
160
235
mV
ns
50
%
V
920
kHz
V
- 14
26
µA
V
µA
nA
V
3.4
V
mA
mV
www.vishay.com
4
Document Number: 69232
S-81795-Rev. C, 04-Aug-08
SiP11206
Vishay Siliconix
SPECIFICATIONS
Test Conditions
Unless Otherwise Specified
T
A
= - 40 °C to 85 °C, F
OSC
= 800 kHz,
10.5 V
≤
V
CC
≤
13.2 V, V
INDET
= 4.8 V, V
IN
= 48 V,
R
DB
= 47.5 kΩ, R
OSC
= 47.5 kΩ, C
OSC
= 100 pF
Limits
Parameter
V
INDET
Function
V
Indet
Pin Input Impedance
Shutdown Threshold High Voltage
Shutdown Hysteresis Voltage
Under Voltage OFF Voltage
Under Voltage Hysteresis Voltage
Over Temperature Protection (OTP)
Activating Temperature
De-activating Temperature
Output High Voltage (differential)
Output Low Voltage (differential)
Peak Output Sourcing Current
Peak Output Sinking Current
Driver Frequency
Rise Time
Fall Time
Boost Pin Current (switching)
LX Pin Current (switching)
LX Pin Leakage Current
Output High Voltage (differential)
Output Low Voltage (differential)
Peak Output Sourcing Current
Peak Output Sinking Current
Driver Frequency
Rise Time
Fall Time
Symbol
R
INDET
V
SDH
H
SD
V
UVH
H
UV
OTP
ON
OTP
OFF
V
DHH
V
DHL
I
DHH
I
DHL
F
DH
t
HR
t
HF
I
BST
I
LX
I
LX-LKG
V
DLH
V
DLL
I
DLH
I
DLL
F
DL
t
LR
t
LF
Min.
30
Typ.
46
0.58
0.15
3.30
0.26
Max.
70
0.76
3.46
Unit
kΩ
V
INDET
rising
V
INDET
rising at I
CC
0.33
3.14
V
T
J
rising
T
J
falling
Sourcing 10 mA, V
DH
- V
BST
Sinking 10 mA, V
DH
-V
LX
V
CC
= 10.5 V, C
LOAD
= 3 nF
340
C
LOAD
= 3 nF
C
LOAD
= 3 nF
V
LX
= 75 V, V
BST
= V
LX
+ V
CC
V
INDET
= 0 V, V
LX
= 40 V
Sourcing 10 mA, V
DL
- V
CC
Sinking 10 mA, V
DL
- V
AGND
V
CC
= 10.5 V, C
LOAD
= 3 nF
340
C
LOAD
= 3 nF
C
LOAD
= 3 nF
- 0.3
1.3
- 2.1
- 0.3
160
145
°C
High-Side MOSFET Driver (DH Output)
0.3
- 2.2
1.6
400
20
20
2.6
- 1.4
3.9
- 0.7
10
460
V
A
kHz
ns
mA
µA
Low-Side MOSFET Driver (DL Output)
0.3
- 1.6
1.6
400
20
20
460
V
A
kHz
ns
Notes:
a. MOC stands for moderate overcurrent voltage at CS pin.
b. SOC stands for severe overcurrent voltage at CS pin.
c. R
DB
should be chosen for each application to provide adequate dead time. For production testing R
DB
is chosen to test at 47 % target duty.
d. Not tested. Guaranteed by driver frequency test. The driver frequency is half of the oscillator frequency.
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