MJD200 (NPN),
MJD210 (PNP)
Complementary Plastic
Power Transistors
NPN/PNP Silicon DPAK For Surface
Mount Applications
Designed for low voltage, low−power, high−gain audio
amplifier applications.
Features
http://onsemi.com
•
High DC Current Gain
•
Lead Formed for Surface Mount Applications in Plastic Sleeves
•
•
•
•
•
•
(No Suffix)
Low Collector−Emitter Saturation Voltage
High Current−Gain − Bandwidth Product
Annular Construction for Low Leakage
Epoxy Meets UL 94 V−0 @ 0.125 in
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
SILICON
POWER TRANSISTORS
5 AMPERES
25 VOLTS, 12.5 WATTS
PNP
COLLECTOR
2,4
NPN
COLLECTOR
2,4
1
BASE
3
EMITTER
1
BASE
3
EMITTER
4
MAXIMUM RATINGS
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
Total Power Dissipation (Note 1)
@ T
A
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
ESD − Human Body Model
ESD − Machine Model
Symbol
V
CB
V
CEO
V
EB
I
C
I
CM
I
B
P
D
12.5
0.1
P
D
1.4
0.011
T
J
, T
stg
HBM
MM
−65 to +150
3B
C
W
W/°C
°C
V
V
A
Y
WW
G
W
W/°C
AYWW
J2x0G
Max
40
25
8.0
5.0
10
1.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
1 2
3
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
= Assembly Location
= Year
= Work Week
x = 1 or 0
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2013
1
September, 2013 − Rev. 13
Publication Order Number:
MJD200/D
MJD200 (NPN), MJD210 (PNP)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient (Note 2)
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
Symbol
R
qJC
R
qJA
Max
10
89.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(I
C
= 10 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CB
= 40 Vdc, I
E
= 0)
(V
CB
= 40 Vdc, I
E
= 0, T
J
= 125°C)
Emitter Cutoff Current
(V
BE
= 8 Vdc, I
C
= 0)
ON CHARACTERISTICS
C Current Gain (Note 3),
(I
C
= 500 mAdc, V
CE
= 1 Vdc)
(I
C
= 2 Adc, V
CE
= 1 Vdc)
(I
C
= 5 Adc, V
CE
= 2 Vdc)
Collector−Emitter Saturation Voltage (Note 3)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
(I
C
= 2 Adc, I
B
= 200 mAdc)
(I
C
= 5 Adc, I
B
= 1 Adc)
Base−Emitter Saturation Voltage (Note 3)
(I
C
= 5 Adc, I
B
= 1 Adc)
Base−Emitter On Voltage (Note 3)
(I
C
= 2 Adc, V
CE
= 1 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4)
(I
C
= 100 mAdc, V
CE
= 10 Vdc, f
test
= 10 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
MJD200
MJD210, NJVMJD210T4G
3. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
[
2%.
4. f
T
=
⎪h
fe
⎪•
f
test
.
f
T
C
ob
−
−
80
120
MHz
65
−
pF
h
FE
70
45
10
V
CE(sat)
−
−
−
V
BE(sat)
V
BE(on)
−
−
0.3
0.75
1.8
Vdc
2.5
Vdc
1.6
−
180
−
Vdc
−
V
CEO(sus)
V
CBO
Vdc
25
−
−
−
−
100
100
100
nAdc
mAdc
nAdc
Symbol
Min
Max
Unit
V
EBO
http://onsemi.com
2
MJD200 (NPN), MJD210 (PNP)
T
A
2.5
PD, POWER DISSIPATION (WATTS)
T
C
25
25
ms
+11 V
1.5
15
T
A
(SURFACE MOUNT)
T
C
0.5
5
0
-9 V
1
10
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1%
51
-4 V
R
B
and R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE, e.g.:
FOR PNP TEST CIRCUIT,
1N5825 USED ABOVE I
B
≈
100 mA
REVERSE ALL POLARITIES
MSD6100 USED BELOW I
B
≈
100 mA
D
1
R
B
R
C
SCOPE
V
CC
+ 30 V
2
20
0
0
25
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 1. Power Derating
1K
500
300
200
100
t, TIME (ns)
50
30
20
10
5
3
2
t, TIME (ns)
t
d
10K
5K
3K
2K
1K
500
300
200
100
50
30
20
5
10
Figure 2. Switching Time Test Circuit
t
s
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t
r
V
CC
= 30 V
I
C
/I
B
= 10
T
J
= 25°C
MJD200
MJD210
MJD200
MJD210
t
f
3
5
10
1
1
2 3
0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
I
C
, COLLECTOR CURRENT (A)
10
0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
1
2
I
C
, COLLECTOR CURRENT (A)
Figure 3. Turn−On Time
Figure 4. Turn−Off Time
http://onsemi.com
3
MJD200 (NPN), MJD210 (PNP)
NPN
MJD200
400
T
J
= 150°C
25°C
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
200
- 55°C
100
80
60
40
V
CE
= 1 V
V
CE
= 2 V
0.5 0.7 1
2
0.2 0.3
I
C
, COLLECTOR CURRENT (A)
3
5
200
400
T
J
= 150°C
25°C
100
80
60
40
V
CE
= 1 V
V
CE
= 2 V
0.2 0.3
0.5 0.7 1
2
I
C
, COLLECTOR CURRENT (A)
3
5
PNP
MJD210
- 55°C
20
0.05 0.07 0.1
20
0.05 0.07 0.1
Figure 5. DC Current Gain
2
T
J
= 25°C
1.6
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2
T
J
= 25°C
1.6
1.2
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 1 V
0.4
V
CE(sat)
@ I
C
/I
B
= 10
0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1
I
C
, COLLECTOR CURRENT (A)
2
3
5
1.2
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 1 V
0.4
V
CE(sat)
@ I
C
/I
B
= 10
0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1
I
C
, COLLECTOR CURRENT (A)
2
3
5
0.8
0.8
Figure 6. “On” Voltage
+ 2.5
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
+2
+ 1.5
+1
+ 0.5
0
- 0.5
-1
- 1.5
-2
- 2.5
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1
q
VB
for V
BE
- 55°C to 25°C
2
3
5
- 55°C to 25°C
25°C to 150°C
q
VC
for V
CE(sat)
25°C to 150°C
*APPLIES FOR I
C
/I
B
≤
h
FE/3
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
+ 2.5
+2
+ 1.5
+1
+ 0.5
0
- 0.5
-1
- 1.5
-2
- 2.5
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1
2
3
5
q
VB
for V
BE
25°C to 150°C
- 55°C to 25°C
*q
VC
for V
CE(sat)
- 55°C to 25°C
*APPLIES FOR I
C
/I
B
≤
h
FE/3
25°C to 150°C
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 7. Temperature Coefficients
http://onsemi.com
4
MJD200 (NPN), MJD210 (PNP)
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.02
0.05
0.02
0.01
0 (SINGLE PULSE)
D = 0.5
0.2
0.1
R
qJC
(t) = r(t)
q
JC
R
qJC
= 10°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC
(t)
P
(pk)
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.05
0.1
0.2
0.5
1
2
t, TIME (ms)
5
10
20
50
100
200
Figure 8. Thermal Response
10
IC, COLLECTOR CURRENT (AMP)
5
3
2
1
5 ms
T
J
= 150°C
100
ms
500
ms
dc
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V
CEO
1
2
3
5
7 10
20
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
30
1 ms
0.1
0.01
0.3
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 9 is based on T
J(pk)
= 150°C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
≤
150°C. T
J(pk)
may be calculated from the data in Figure 8.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 9. Active Region Safe Operating Area
200
T
J
= 25°C
C, CAPACITANCE (pF)
100
70
50
C
ob
30
20
0.4
MJD200 (NPN)
MJD210 (PNP)
0.6
1
2
4
6
10
V
R
, REVERSE VOLTAGE (V)
20
40
C
ib
Figure 10. Capacitance
http://onsemi.com
5
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
