NTD3055-150,
NVD3055-150
Power MOSFET
9.0 A, 60 V, N−Channel DPAK/IPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
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•
NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
Typical Applications
9.0 AMPERES, 60 VOLTS
R
DS(on)
= 122 mW (Typ)
D
N−Channel
G
S
4
4
•
•
•
•
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
GS
= 10 MW)
Gate−to−Source Voltage
−
Continuous
−
Non−repetitive (t
p
v10
ms)
Drain Current
−
Continuous @ T
A
= 25°C
−
Continuous @ T
A
= 100°C
−
Single Pulse (t
p
v10
ms)
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
Total Power Dissipation @ T
A
= 25°C (Note 1)
Total Power Dissipation @ T
A
= 25°C (Note 2)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy
−
Starting T
J
= 25°C
(V
DD
= 25 Vdc, V
GS
= 10 Vdc,
L = 1.0 mH, I
L
(pk) = 7.75 A, V
DS
= 60 Vdc)
Thermal Resistance
−
Junction−to−Case
−
Junction−to−Ambient (Note 1)
−
Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Symbol
V
DSS
V
DGR
V
GS
V
GS
I
D
I
D
Value
60
60
"20
"30
9.0
3.0
27
28.8
0.19
2.1
1.5
−55
to 175
30
Unit
Vdc
Vdc
Vdc
1 2
1
3
2
3
DPAK
CASE 369C
(SURFACE MOUNT)
STYLE 2
IPAK
CASE 369D
(STRAIGHT LEAD)
STYLE 2
Adc
Apk
W
W/°C
W
W
°C
mJ
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
AYWW
3150G
4
Drain
AYWW
= Assembly Location*
= Device Code
= Year
= Work Week
= Pb−Free Package
3150G
I
DM
P
D
T
J
, T
stg
E
AS
2
1
3
Drain
Gate
Source
1 2 3
Gate Drain Source
R
qJC
R
qJA
R
qJA
T
L
5.2
71.4
100
260
°C/W
°C
A
3150
Y
WW
G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using minimum recommended
pad size.
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2014
May, 2017
−
Rev. 7
1
Publication Order Number:
NTD3055−150/D
NTD3055−150, NVD3055−150
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250
mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
Gate−Body Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250
mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 10 Vdc, I
D
= 4.5 Adc)
Static Drain−to−Source On−Voltage (Note 3)
(V
GS
= 10 Vdc, I
D
= 9.0 Adc)
(V
GS
= 10 Vdc, I
D
= 4.5 Adc, T
J
= 150°C)
Forward Transconductance (Note 3) (V
DS
= 7.0 Vdc, I
D
= 6.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(V
DS
= 48 Vdc, I
D
= 9.0 Adc,
V
GS
= 10 Vdc) (Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I
S
= 9.0 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 19 Adc, V
GS
= 0 Vdc, T
J
=
150°C)
(I
S
= 9.0 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
V
SD
−
−
−
−
−
−
0.98
0.86
28.9
21.6
7.3
0.036
1.20
−
−
−
−
−
mC
Vdc
(V
DD
= 48 Vdc, I
D
= 9.0 Adc,
V
GS
= 10 Vdc,
R
G
= 9.1
W)
(Note 3)
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
−
−
−
−
−
−
−
11.2
37.1
12.2
23
7.1
1.7
3.5
25
80
25
50
15
−
−
nC
ns
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
C
oss
C
rss
−
−
−
200
70
26
280
100
40
pF
V
GS(th)
2.0
−
−
−
−
−
3.0
6.4
122
1.4
1.1
5.4
4.0
−
150
1.9
−
−
Vdc
mV/°C
mW
Vdc
V
(BR)DSS
60
−
−
−
−
−
70.2
−
−
−
−
−
1.0
10
±100
Vdc
mV/°C
mAdc
Symbol
Min
Typ
Max
Unit
I
DSS
I
GSS
nAdc
R
DS(on)
V
DS(on)
g
FS
mhos
Reverse Recovery Time
t
rr
t
a
t
b
Q
RR
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTD3055−150, NVD3055−150
20
I
D
, DRAIN CURRENT (AMPS)
I
D
, DRAIN CURRENT (AMPS)
V
GS
= 10 V
16
12
8
4
0
V
GS
= 9 V
V
GS
= 8 V
20
V
DS
≥
10 V
16
12
8
4
0
0
1
2
3
4
5
6
7
8
3
4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
J
= 25°C
T
J
= 100°C
T
J
=
−55°C
5
6
7
8
9
V
GS
= 7 V
V
GS
= 6 V
V
GS
= 5 V
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.5
V
GS
= 10 V
0.4
0.3
0.2
0.1
0
T
J
= 100°C
0.5
V
GS
= 15 V
0.4
0.3
0.2
0.1
0
0
4
8
12
16
20
24
I
D
, DRAIN CURRENT (AMPS)
T
J
= 100°C
T
J
= 25°C
T
J
=
−55°C
T
J
= 25°C
T
J
=
−55°C
0
4
8
12
16
20
24
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−To−Source Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
−50 −25
0
25
50
75
100
125
150
175
1
0
I
D
= 4.5 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
100
1000
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
10
T
J
= 100°C
10
20
30
40
50
60
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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3
NTD3055−150, NVD3055−150
V
DS
= 0 V
C
iss
V
GS
= 0 V
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
560
480
C, CAPACITANCE (pF)
400
320
240
160
80
0
C
rss
10
5 V
GS
0 V
DS
5
10
15
20
25
C
oss
C
rss
C
iss
12
10
8
6
4
2
0
I
D
= 9 A
T
J
= 25°C
0
1
2
3
4
5
6
7
8
Q
1
Q
T
V
GS
T
J
= 25°C
Q
2
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
10
I
S
, SOURCE CURRENT (AMPS)
100
V
DS
= 30 V
I
D
= 9 A
V
GS
= 10 V
t, TIME (ns)
t
r
V
GS
= 0 V
T
J
= 25°C
8
6
4
2
0
t
f
t
d(off)
10
t
d(on)
1
10
R
G
, GATE RESISTANCE (W)
100
0.6
0.68
0.76
0.84
0.92
1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
100
I
D
, DRAIN CURRENT (AMPS)
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
10
100
ms
1 ms
10 ms
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
10
ms
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
32
Figure 10. Diode Forward Voltage versus
Current
I
D
= 7.75 A
24
16
1
8
0.1
dc
100
0
25
50
75
100
125
150
175
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTD3055−150, NVD3055−150
10
r(t), NORMALIZED EFFECTIVE
TRANSIENT
THERMAL RESISTANCE
D = 0.5
0.2
1
0.1
0.05
0.01
SINGLE PULSE
0.1
0.00001
0.0001
0.001
0.01
t, TIME (s)
0.1
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
1
10
Figure 13. Thermal Response
ORDERING INFORMATION
Device
NTD3055−150G
NTD3055−150−1G
NTD3055−150T4G
NTD3055−150T4H
NVD3055−150T4G*
NVD3055−150T4G−VF01
Package
DPAK
(Pb−Free)
IPAK
(Pb−Free)
DPAK
(Pb−Free)
DPAK
(Halide−Free)
DPAK
(Pb−Free)
DPAK
(Pb−Free)
Shipping
†
75 Units / Rail
75 Units / Rail
2500 / Tape & Reel
2500 / Tape & Reel
2500 / Tape & Reel
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
www.onsemi.com
5
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