BTA316-600BT
3Q Hi-Com Triac
Rev. 02 — 30 November 2010
Product data sheet
1. Product profile
1.1 General description
Planar passivated high commutation three quadrant triac in a SOT78 plastic package
intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.
This "series BT" triac will commutate the full RMS current at the maximum rated junction
temperature without the aid of a snubber where "high junction operating temperature
capability" is required
1.2 Features and benefits
3Q technology for improved noise
immunity
High commutation capability with
maximum false trigger immunity
High immunity to false turn-on by dV/dt
High junction operating temperature
capability
High voltage capability
Planar passivated for voltage
ruggedness and reliability
Triggering in three quadrants only
1.3 Applications
Applications subject to high
temperature
Electronic thermostats (heating and
cooling)
High power motor controls e.g.
washing machines and vacuum
cleaners
Rectifier-fed DC inductive loads e.g.
DC motors and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
Quick reference data
Parameter
repetitive peak
off-state voltage
non-repetitive peak
on-state current
junction temperature
RMS on-state current
full sine wave; T
mb
≤
126 °C;
see
Figure 3;
see
Figure 1;
see
Figure 2
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; see
Figure 4;
see
Figure 5
Conditions
Min
-
-
Typ
-
-
Max Unit
600
140
V
A
T
j
I
T(RMS)
-
-
-
-
150
16
°C
A
NXP Semiconductors
BTA316-600BT
3Q Hi-Com Triac
Quick reference data
…continued
Parameter
gate trigger current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; see
Figure 7
Min
2
2
2
Typ
-
-
-
Max Unit
50
50
50
mA
mA
mA
Table 1.
Symbol
I
GT
Static characteristics
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main terminal 2
mb
T2
sym051
Simplified outline
Graphic symbol
T1
G
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
BTA316-600BT
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Type number
BTA316-600BT
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 30 November 2010
2 of 14
NXP Semiconductors
BTA316-600BT
3Q Hi-Com Triac
4. Limiting values
Table 4.
Symbol
V
DRM
I
T(RMS)
I
TSM
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
I
2
t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
full sine wave; T
mb
≤
126 °C; see
Figure 3;
see
Figure 1;
see
Figure 2
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
see
Figure 4;
see
Figure 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
I
2
t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
t
p
= 10 ms; sine-wave pulse
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
Conditions
Min
-
-
-
-
-
-
-
-
-
-40
-
Max
600
16
140
150
98
100
2
5
0.5
150
150
Unit
V
A
A
A
A
2
s
A/µs
A
W
W
°C
°C
In accordance with the Absolute Maximum Rating System (IEC 60134).
20
I
T(RMS)
(A)
16
003aab777
60
I
T(RMS)
(A)
50
003aaf674
40
12
30
8
20
4
10
0
-50
0
50
100
150
T
mb
(°C)
0
10
−2
10
−1
1
10
surge duration (s)
Fig 1.
RMS on-state current as a function of mounting
base temperature; maximum values
Fig 2.
RMS on-state current as a function of surge
duration; maximum values
BTA316-600BT
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 30 November 2010
3 of 14
NXP Semiconductors
BTA316-600BT
3Q Hi-Com Triac
20
P
tot
(W)
15
003aab689
conduction
angle,
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
= 180°
120°
α
90°
60°
30°
10
5
0
0
2
4
6
8
10
12
14
I
T(RMS)
(A)
16
Fig 3.
160
I
TSM
(A)
120
Total power dissipation as a function of RMS on-state current; maximum values
003aab668
80
I
T
I
TSM
t
1/f
T
j(init)
= 25
°C
max
40
0
1
10
10
2
number of cycles (n)
10
3
Fig 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA316-600BT
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 30 November 2010
4 of 14
NXP Semiconductors
BTA316-600BT
3Q Hi-Com Triac
10
3
I
TSM
(A)
003aab671
(1)
10
2
I
T
I
TSM
t
t
p
T
j(init)
= 25
°C
max
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
Fig 5.
Non-repetitive peak on-state current as a function of pulse duration; maximum values
BTA316-600BT
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 30 November 2010
5 of 14
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