d. Maximum under steady state conditions is 80 °C/W.
Document Number: 74283
S11-0209-Rev. C, 14-Feb-11
www.vishay.com
1
Si4472DY
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 150 V, V
GS
= 0 V
V
DS
= 150 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
10 V, V
GS
= 10 V
V
GS
=
10 V, I
D
= 5 A
V
GS
=
8 V, I
D
= 5 A
V
DS
= 15 V, I
D
= 5 A
Min.
150
Typ.
Max.
Unit
V
172
- 10
2.5
4.5
± 100
1
10
30
0.036
0.0375
23
1735
0.045
0.047
mV/°C
V
nA
µA
A
Ω
S
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 75 V, V
GS
= 10 V, I
D
= 5 A
V
DS
= 75 V, V
GS
= 8 V, I
D
= 5 A
f = 1 MHz
V
DD
= 50 V, R
L
= 10
Ω
I
D
≅
5 A, V
GEN
= 10 V, R
g
= 1
Ω
160
37
28.5
23
8
6.5
0.85
14
12
22
6
16
1.3
21
18
33
10
24
18
30
12
7.7
50
0.77
63
110
49
14
1.2
95
165
43
35
pF
nC
Ω
ns
V
DD
= 50 V, R
L
= 10
Ω
I
D
≅
5 A, V
GEN
= 8 V, R
g
= 1
Ω
12
20
7
T
C
= 25 °C
I
S
= 2.6 A
A
V
ns
nC
ns
I
F
= 5 A, dI/dt = 100 A/µs, T
J
= 25 °C
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
a. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74283
S11-0209-Rev. C, 14-Feb-11
Si4472DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
60
V
GS
= 10
V
thru 7
V
48
I
D
- Drain C
u
rrent (A)
I
D
- Drain C
u
rrent (A)
V
GS
= 6
V
0.9
T
C
= 125 °C
0.6
1.2
36
24
T
C
= 25 °C
0.3
12
V
GS
= 5
V
T
C
= - 55 °C
0.0
0
0
1
2
3
4
5
0
2
4
6
8
10
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.055
2000
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.051
C - Capacitance (pF)
1600
C
iss
0.047
V
GS
=
8 V
0.043
V
GS
= 10
V
0.039
1200
800
400
C
oss
C
rss
0
20
40
60
80
100
0.035
0
10
20
30
40
50
60
0
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 5 A
V
GS
- Gate-to-So
u
rce
V
oltage (
V
)
8
V
DS
= 75
V
6
V
DS
= 100
V
R
DS(on)
- On-Resistance
V
DS
= 50
V
2.1
2.5
I
D
= 5 A
Capacitance
V
GS
= 10
V
(
N
ormalized)
1.7
V
GS
=
8 V
4
1.3
2
0.9
0
0
6
12
18
24
30
0.5
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 74283
S11-0209-Rev. C, 14-Feb-11
www.vishay.com
3
Si4472DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
R
DS(on)
- Drain-to-So
u
rce On-Resistance (Ω)
0.20
I
D
= 5 A
0.16
10
I
S
- So
u
rce C
u
rrent (A)
T
J
= 150 °C
1
0.12
T
J
= 125 °C
0.08
T
J
= 25 °C
0.1
T
J
= 25 °C
0.01
0.04
0.001
0
0.2
0.4
0.6
0.8
1
1.2
0.00
0
2
4
6
8
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
1.0
200
On-Resistance vs. Gate-to-Source Voltage
0.5
160
Po
w
er (
W
)
V
GS(th)
(
V
)
0.0
120
I
D
= 5 mA
- 0.5
80
- 1.0
40
- 1.5
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature ( C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain C
u
rrent (A)
Single Pulse Power, Junction-to-Ambient
1 ms
1
10 ms
0.1
T
A
= 25 °C
Single Pulse
0.01
0.01
*
V
GS
0.1
1
100 ms
1s
10 s
DC
10
100
1000
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 74283
S11-0209-Rev. C, 14-Feb-11
Si4472DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
9
7
I
D
- Drain C
u
rrent (A)
5
4
2
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
8.0
2.0
6.4
1.6
Power (W)
Po
w
er (W)
0
25
50
75
100
125
150
4.8
1.2
3.2
0.8
1.6
0.4
0.0
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
卡巴斯基的安全研究人员称其发现了如何攻击Intel微处理器的远程攻击代码，据传，这一代码可以通过TCP/IP包和JavaScript代码到达用户系统。 目前受影响的系统包括Windows XP，Vista，Windows Server 2003，Windows Server 2008，Linux甚至是BSD和Mac。但所幸大多数错误可以由Intel和BIOS厂商联合进行修复。 卡...[详细]
中兴（ZTE）在2008年7月22日开始举办的“Wireless Japan 2008”上召开了记者招待会。ZTE于2008年4月设立日本法人——日本中兴并首次进入日本市场，开始向移动虚拟网络运营商（MVNO）——日本通信提供支持W-CDMA的数据通信终端。“在进入日本市场之际，已确立明确的销售目标：从08年起的3年内实现1亿美元的销售额”（中兴东南亚地区总裁钱强）。预计08年的销售额为2...[详细]
为我们提建议&公告
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
