ND2406L/2410L, BSS129
N-Channel Depletion-Mode MOSFET Transistors
Product Summary
Part Number
ND2406L
ND2410L
BSS129
230
V
(BR)DSV
Min (V)
240
r
DS(on)
Max (W)
6
10
20
V
GS(off)
(V)
–1.5 to –4.5
–0.5 to –2.5
–0.7 (min)
I
D
(A)
0.23
0.18
0.15
Features
D
D
D
D
D
High Breakdown Voltage: 260 V
Normally “On” Low r
DS
Switch: 3.5
W
Low Input and Output Leakage
Low-Power Drive Requirement
Low Input Capacitance
TO-226AA
(TO-92)
1
Benefits
D
D
D
D
D
Full-Voltage Operation
Low Offset Voltage
Low Error Voltage
Easily Driven Without Buffer
High-Speed Switching
Applications
D
D
D
D
D
Normally “On” Switching Circuits
Current Sources/Limiters
Power Supply, Converter Circuits
Solid-State Relays
Telecom Switches
TO-92-18CD
(TO-18 Lead Form)
1
S
S
G
2
D
2
D
3
Top View
ND2406L
ND2410L
G
3
Top View
BSS129
Absolute Maximum Ratings (T
A
= 25_C Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
Pulsed Drain Current
a
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70198.
Applications information may also be obtained via FaxBack, request document #70612.
T
A
=
25_C
T
A
=
100_C
T
A
=
25_C
T
A
=
100_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
ND2406L
240
"30
0.23
0.14
0.9
0.8
0.32
156
ND2410L
240
"30
0.18
0.12
0.9
0.8
0.32
156
–55 to 150
BSS129
230
"20
0.15
Unit
V
A
0.6
1.0
0.4
125
W
_C/W
_C
Siliconix
S-52426—Rev. C, 14-Apr-97
1
ND2406L/2410L, BSS129
Specifications
a
Limits
ND2406L
ND2410L
BSS129
Parameter
Static
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Min
Max
Unit
V
GS
= –9 V, I
D
= 10
mA
Drain-Source
D i S
Breakdown Voltage
g
V
(BR)DSV
V
GS
= –5 V, I
D
= 10
mA
V
GS
= –3 V, I
D
= 250
mA
V
DS
= 5 V, I
D
= 10
mA
Gate-Source
Gate Source Cutoff Voltage
V
GS( ff)
GS(off)
V
DS
= 3 V, I
D
= 1 mA
V
DS
= 0 V, V
GS
=
"20
V
T
J
=
125_C
V
DS
= 180 V, V
GS
= –9 V
T
J
=
125_C
Drain Cutoff Current
I
D( ff)
D(off)
V
DS
= 180 V, V
GS
= –5 V
T
J
=
125_C
V
DS
= 230 V, V
GS
= –3 V
T
J
=
125_C
Drain-Saturation Current
c
I
DSS
V
DS
= 10 V, V
GS
= 0 V
V
GS
= 2 V, I
D
= 30 mA
Drain-Source On Resistance
Drain Source On-Resistance
c
r
DS( )
DS(on)
V
GS
= 0 V, I
D
= 30 mA
T
J
=
125_C
V
GS
= 0 V, I
D
= 14 mA
Forward Transconductance
c
Common Source
Output Conductance
c
g
f
fs
g
os
V
DS
= 25 V, I
D
= 250 mA
V
DS
= 10 V, I
D
= 30 A
260
260
260
240
240
230
–1.5
–4.5
–0.5
–2.5
–0.7
"10
"50
1
200
1
200
0.1
200
mA
"10
"50
"100
nA
V
Gate-Body
Gate Body Leakage
I
GSS
350
3.3
4.5
7.2
4
375
110
70
40
40
mA
6
15
10
25
20
140
W
mS
mS
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
V
DS
= 25 V, V
GS
= –5 V
V
5
f = 1 MHz
70
20
10
120
30
15
120
30
15
pF
Switching
d
Turn-On
Turn On Time
t
d(on)
t
r
Turn-Off Time
t
d(off)
t
f
Notes
a. T
A
= 25_C unless otherwise noted.
b. For DESIGN AID ONLY, not subject to production testing.
c. Pulse test: PW
v300
ms
duty cycle
v2%.
d. Switching time is essentially independent of operating temperature.
V
DD
=
25
V, R
L
= 830
W
I
D
^
30
mA V
GEN
= -5 V
mA,
R
G
= 25
W
15
75
ns
40
100
VDDV24
2
Siliconix
S-52426—Rev. C, 14-Apr-97
ND2406L/2410L, BSS129
Typical Characteristics (25_C Unless Otherwise Noted)
200
Output Characteristics (ND2406)
200
V
GS
= 2 V
–0.8 V
–1 V
I
D
– Drain Current (mA)
160
Output Characteristics (ND2410)
V
GS
= 2 V
0.2 V
0V
0.4 V
120
–0.4 V
80
–0.6 V
40
–0.8 V
–1 V
0
0.4
0.8
1.2
1.6
2.0
–0.2 V
I
D
– Drain Current (mA)
160
–0.4 V
–0.6 V
120
–1.2 V
80
–1.4 V
–1.6 V
40
–1.8 V
–2 V
0
0
0.4
0.8
1.2
1.6
2
V
DS
– Drain-to-Source Voltage (V)
500
0
V
DS
– Drain-to-Source Voltage (V)
Transfer Characteristics (ND2406)
500
V
DS
= 10 V
T
C
= –55_C
125_C
400
I
D
– Drain Current (mA)
25_C
Transfer Characteristics (ND2410)
V
DS
= 10 V
400
I
D
– Drain Current (mA)
300
300
200
200
25_C
T
C
= 125_C
–55_C
100
100
0
–4.5
–3.5
–2.5
–1.5
–0.5
0.5
0
–4.5
–3.5
–2.5
–1.5
–0.5
0.5
V
GS
– Gate-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
10
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
r
DS(on)
I
DSS
1000
25
On-Resistance vs. DrainCurrent
V
GS
= 0 V
6
600
r
DS(on)
– On-Resistance (
W
)
r
DS(on)
– On-Resistance (
W
)
8
800
20
I
DSS
– Drain Current (mA)
15
ND2410
10
4
400
ND2406
2
r
DS
@ I
D
= 30 mA, V
GS
= 0 V
I
DSS
@ V
DS
= 7.5 V, V
GS
= 0 V
0
–1
–2
–3
–4
–5
–6
V
GS(off)
– Gate-Source Cutoff Voltage (V)
200
5
0
0
10
100
I
D
– Drain Current (mA)
1K
Siliconix
S-52426—Rev. C, 14-Apr-97
3
ND2406L/2410L, BSS129
Typical Characteristics (25_C Unless Otherwise Noted) (Cont’d)
2.25
r
DS(on)
– Drain-Source On-Resistance
(Normalized)
2.00
1.75
1.50
1.25
1.00
0.75
0.50
–50
–10
30
70
110
150
T
J
– Junction Temperature (_C)
Normalized On-Resistance
vs. Junction Temperature
g
fs
– Forward Transconductance (mS)
V
GS
= 0 V
I
D
= 30 mA
350
300
Forward Transconductance vs. Drain Current
25_C
150_C
250
200
150
100
50
0
1
10
–55_C
V
DS
= 10 V
Pulse Test 80
ms,
1% Duty Cycle
100
1K
I
D
– Drain Current (mA)
Capacitance
240
200
C – Capacitance (pF)
160
120
80
40
C
rss
0
0
10
20
30
40
50
V
DS
– Drain-to-Source Voltage (V)
3
1
C
oss
C
iss
V
GS
= –5 V
f = 1 MHz
t – Switching Time (ns)
100
300
Load Condition Effects on Switching
t
f
t
d(off)
t
r
V
DD
= 25 V
V
GS
= 0 to –5 V
R
G
= 25W
t
d(on)
10
10
I
D
– Drain Current (mA)
100
1
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1 0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.01
Single Pulse
2. Per Unit Base = R
thJA
= 156
_
C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
0.01
0.1
1
10
100
1K
10 K
t
1
– Square Wave Pulse Duration (sec)
4
Siliconix
S-52426—Rev. C, 14-Apr-97
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
