Gate Drivers
参数名称 | 属性值 |
是否Rohs认证 | 符合 |
厂商名称 | Microchip(微芯科技) |
包装说明 | SOP, |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
Factory Lead Time | 6 weeks |
高边驱动器 | NO |
接口集成电路类型 | BUFFER OR INVERTER BASED MOSFET DRIVER |
JESD-30 代码 | R-PDSO-G8 |
JESD-609代码 | e4 |
长度 | 4.9 mm |
湿度敏感等级 | 3 |
功能数量 | 1 |
端子数量 | 8 |
最高工作温度 | 85 °C |
最低工作温度 | -40 °C |
标称输出峰值电流 | 9 A |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | SOP |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
峰值回流温度(摄氏度) | 260 |
认证状态 | Not Qualified |
座面最大高度 | 1.879 mm |
最大供电电压 | 18 V |
最小供电电压 | 4.5 V |
标称供电电压 | 18 V |
表面贴装 | YES |
技术 | BCDMOS |
温度等级 | INDUSTRIAL |
端子面层 | Nickel/Palladium/Gold (Ni/Pd/Au) |
端子形式 | GULL WING |
端子节距 | 1.27 mm |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | 40 |
断开时间 | 0.08 µs |
接通时间 | 0.08 µs |
宽度 | 3.9 mm |
MIC4421YM-TR | MIC4421YN | MIC4422ZN | MIC4422ZT | MIC4421ZM-TR | MIC4421ZN | MIC4422YM | |
---|---|---|---|---|---|---|---|
描述 | Gate Drivers | Gate Drivers High Speed, 9A Low Side MOSFET Driver | Gate Drivers High Speed, 9A Low Side MOSFET Driver | Gate Drivers High Speed, 9A Low Side MOSFET Driver | Gate Drivers | Gate Drivers High Speed, 9A Low Side MOSFET Driver | Gate Drivers High Speed, 9A Low Side MOSFET Driver |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
包装说明 | SOP, | DIP, | DIP, | , | SOP, | DIP, | SOP, |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Factory Lead Time | 6 weeks | 2 weeks | 8 weeks | 9 weeks | 7 weeks | 9 weeks | 7 weeks |
厂商名称 | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | - |
高边驱动器 | NO | NO | NO | NO | NO | - | NO |
接口集成电路类型 | BUFFER OR INVERTER BASED MOSFET DRIVER | BUFFER OR INVERTER BASED MOSFET DRIVER | BUFFER OR INVERTER BASED MOSFET DRIVER | BUFFER OR INVERTER BASED MOSFET DRIVER | BUFFER OR INVERTER BASED MOSFET DRIVER | - | BUFFER OR INVERTER BASED MOSFET DRIVER |
JESD-30 代码 | R-PDSO-G8 | R-PDIP-T8 | R-PDIP-T8 | R-PSFM-T5 | R-PDSO-G8 | - | R-PDSO-G8 |
JESD-609代码 | e4 | e3 | e3 | e3 | e4 | - | e4 |
长度 | 4.9 mm | 9.525 mm | 9.525 mm | - | 4.9 mm | - | 4.9 mm |
功能数量 | 1 | 1 | 1 | 1 | 1 | - | 1 |
端子数量 | 8 | 8 | 8 | 5 | 8 | - | 8 |
最高工作温度 | 85 °C | 85 °C | 70 °C | 70 °C | 70 °C | - | 85 °C |
标称输出峰值电流 | 9 A | 9 A | 9 A | 9 A | 9 A | - | 9 A |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY |
封装代码 | SOP | DIP | DIP | - | SOP | - | SOP |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR |
封装形式 | SMALL OUTLINE | IN-LINE | IN-LINE | FLANGE MOUNT | SMALL OUTLINE | - | SMALL OUTLINE |
峰值回流温度(摄氏度) | 260 | NOT APPLICABLE | NOT APPLICABLE | NOT APPLICABLE | 260 | - | 260 |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified |
最大供电电压 | 18 V | 18 V | 18 V | 18 V | 18 V | - | 18 V |
最小供电电压 | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | - | 4.5 V |
标称供电电压 | 18 V | 18 V | 18 V | 18 V | 18 V | - | 18 V |
表面贴装 | YES | NO | NO | NO | YES | - | YES |
技术 | BCDMOS | BCDMOS | BCDMOS | BCDMOS | BCDMOS | - | BCDMOS |
温度等级 | INDUSTRIAL | INDUSTRIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | - | INDUSTRIAL |
端子面层 | Nickel/Palladium/Gold (Ni/Pd/Au) | Matte Tin (Sn) - annealed | Matte Tin (Sn) - annealed | Matte Tin (Sn) - annealed | Nickel/Palladium/Gold (Ni/Pd/Au) | - | Nickel/Palladium/Gold (Ni/Pd/Au) |
端子形式 | GULL WING | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | GULL WING | - | GULL WING |
端子节距 | 1.27 mm | 2.54 mm | 2.54 mm | - | 1.27 mm | - | 1.27 mm |
端子位置 | DUAL | DUAL | DUAL | SINGLE | DUAL | - | DUAL |
处于峰值回流温度下的最长时间 | 40 | NOT APPLICABLE | NOT APPLICABLE | NOT APPLICABLE | 40 | - | 40 |
断开时间 | 0.08 µs | 0.08 µs | 0.08 µs | 0.08 µs | 0.08 µs | - | 0.08 µs |
接通时间 | 0.08 µs | 0.08 µs | 0.08 µs | 0.08 µs | 0.08 µs | - | 0.08 µs |
宽度 | 3.9 mm | 7.62 mm | 7.62 mm | - | 3.9 mm | - | 3.9 mm |
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