Darlington Transistors 500mA 30V NPN
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | ON Semiconductor(安森美) |
| 零件包装代码 | TO-92 |
| 包装说明 | CASE 29-11, TO-226AA, 3 PIN |
| 针数 | 3 |
| 制造商包装代码 | CASE 29-11 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| 最大集电极电流 (IC) | 0.5 A |
| 集电极-发射极最大电压 | 30 V |
| 配置 | DARLINGTON |
| 最小直流电流增益 (hFE) | 10000 |
| JEDEC-95代码 | TO-92 |
| JESD-30 代码 | O-PBCY-T3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | ROUND |
| 封装形式 | CYLINDRICAL |
| 峰值回流温度（摄氏度） | 240 |
| 极性/信道类型 | NPN |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | 30 |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 125 MHz |
| MPSA13RLRP | MPSA13RLRM | MPSA14RLRP | MPSA13RLRA | MPSA13 | MPSA14 | MPSA14RLRA | |
|---|---|---|---|---|---|---|---|
| 描述 | Darlington Transistors 500mA 30V NPN | Darlington Transistors 500mA 30V NPN | Darlington Transistors 500mA 30V NPN | Darlington Transistors 500mA 30V NPN | Darlington Transistors 500mA 30V NPN | Darlington Transistors 500mA 30V NPN | Darlington Transistors 500mA 30V NPN |
| 包装说明 | CASE 29-11, TO-226AA, 3 PIN | CASE 29-11, TO-226AA, 3 PIN | CYLINDRICAL, O-PBCY-T3 | CASE 29-11, TO-226, 3 PIN | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 |
| 针数 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| 制造商包装代码 | CASE 29-11 | CASE 29-11 | CASE 29-11 | 29-11 | 29-11 | 29-11 | 29-11 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| 最大集电极电流 (IC) | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A |
| 集电极-发射极最大电压 | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V |
| 配置 | DARLINGTON | DARLINGTON | DARLINGTON | DARLINGTON | DARLINGTON | DARLINGTON | DARLINGTON |
| 最小直流电流增益 (hFE) | 10000 | 10000 | 20000 | 10000 | 10000 | 20000 | 20000 |
| JEDEC-95代码 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 |
| JESD-30 代码 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| 封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| 峰值回流温度（摄氏度） | 240 | 240 | 240 | 240 | 240 | 240 | 240 |
| 极性/信道类型 | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 处于峰值回流温度下的最长时间 | 30 | 30 | 30 | 30 | 30 | 30 | 30 |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 125 MHz | 125 MHz | 125 MHz | 125 MHz | 125 MHz | 125 MHz | 125 MHz |
| 厂商名称 | ON Semiconductor(安森美) | ON Semiconductor(安森美) | ON Semiconductor(安森美) | ON Semiconductor(安森美) | ON Semiconductor(安森美) | ON Semiconductor(安森美) | - |
| 零件包装代码 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | - | TO-92 |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | - | - | EAR99 |
| Brand Name | - | - | - | ON Semiconductor | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| 是否无铅 | - | - | - | 含铅 | 含铅 | 含铅 | 含铅 |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
