SMD Schottky Barrier Diode
CDBU0230R
I
o
= 200 mA
V
R
= 30 Volts
RoHS Device
Features
-Low reverse current.
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
0.039(1.00)
0.031(0.80)
0603/SOD-523F
0.071(1.80)
0.063(1.60)
Mechanical data
-Case: 0603/SOD-523F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking Code: Cathode band & BB
0.012 (0.30) Typ.
0.014(0.35) Typ.
0.033(0.85)
0.027(0.70)
-Mounting position: Any.
-Weight: 0.003 gram(approx.).
0.028(0.70) Typ.
Dimensions in inches and (millimeter)
Maximum Rating
(at T
A
=25 C unless otherwise noted)
O
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Forward current,surge peak
Storage temperature
Junction temperature
Conditions
Symbol Min Typ Max Unit
V
RRM
V
R
I
O
35
30
200
V
V
mA
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
I
FSM
T
STG
T
j
-40
1
+125
+125
A
O
C
C
O
Electrical Characteristics
(at T
A
=25 C unless otherwise noted)
O
Parameter
Forward voltage
Reverse current
I
F
= 200 mA
V
R
= 10 V
Conditions
Symbol Min Typ Max Unit
V
F
I
R
0.6
1
V
uA
REV:B
QW-A1027
Page 1
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
RATING AND CHARACTERISTIC CURVES (CDBU0230R)
Fig. 1 - Forward characteristics
1000
1m
125 C
O
Fig. 2 - Reverse characteristics
Forward current (mA )
100
Reverse current ( A )
100u
10u
75 C
O
10
C
O
1u
25 C
O
5
12
C
100n
-25 C
O
O
75
25
O
C
1
C
O
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
-25
10n
1n
0
5
10
15
20
25
30
Forward voltage (V)
Reverse voltage (V)
Fig. 3 - Capacitance between
terminals characteristics
Capacitance between terminals (
P
F)
100
Fig.4 - Current derating curve
Average forward current(%)
f = 1 MHz
Ta = 25 C
100
80
10
60
40
20
1
0
5
10
15
20
25
30
0
0
25
50
75
100
O
125
150
Reverse voltage (V)
Ambient temperature ( C)
Fig. 5 - VF Dispersion map
590
O
Fig. 6 - IR Dispersion map
1000
900
O
Fig. 7 - CT Dispersion map
50
O
Ta=25 C
IF=200mA
n=30pcs
Ta=25 C
VR=10V
n=30pcs
45
Capacitance between
terminals(pF)
Forward voltage (mV)
Reverse current (nA)
580
800
700
600
500
400
300
200
100
AVG:111nA
40
35
30
25
20
15
10
5
0
AVG:18.8pF
Ta=25 C
F=1MHz
VR=0V
n=10pcs
570
560
AVG:568mV
550
540
0
REV:B
QW-A1027
Page 2
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Reel Taping Specification
P
0
P
1
d
Index hole
E
T
F
B
Polarity
W
C
P
A
12
0
o
D
2
D
1
D
W
1
Trailer
.......
.......
10 pitches (min)
Device
.......
.......
.......
.......
Leader
.......
.......
10 pitches (min)
End
Start
Direction of Feed
SYMBOL
A
1.00 ± 0.10
0.039
±
0.004
B
1.85 ± 0.10
0.073
±
0.004
C
1.00 ± 0.10
0.039
±
0.004
d
1.55 ± 0.05
0.061
±
0.002
D
178 ± 1
7.008
±
0.04
D
1
60.0 MIN.
2.362 MIN.
D
2
13.0 ± 0.20
0.512
±
0.008
0603
(SOD-523F)
(mm)
(inch)
SYMBOL
E
1.75 ± 0.10
0.069
±
0.004
F
3.50 ± 0.05
0.138
±
0.002
P
4.00 ± 0.10
0.157
±
0.004
P
0
4.00 ± 0.10
0.157
±
0.004
P
1
2.00 ± 0.05
0.079
±
0.004
T
0.23 ± 0.05
0.009
±
0.002
W
8.00 ± 0.20
0.315
±
0.008
W
1
13.5 MAX.
0.531 MAX.
0603
(SOD-523F)
(mm)
(inch)
REV:B
QW-A1027
Page 3
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Marking Code
Part Number
CDBU0230R
Marking Code
BB
BB
Suggested PAD Layout
0603/SOD-523F
SIZE
(mm)
A
B
C
D
E
1.70
0.60
0.80
2.30
1.10
(inch)
0.067
0.024
0.031
C
D
A
E
0.091
B
0.043
Standard Package
Qty per Reel
Case Type
(Pcs)
0603/SOD-523F
4000
Reel Size
(inch)
7
REV:B
QW-A1027
Page 4
Comchip Technology CO., LTD.
嵌入式系统
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