SGB07N120
Fast IGBT in NPT-technology
•
lower
E
off
compared to previous generation
•
Short circuit withstand time – 10
µs
•
Designed for:
- Motor controls
- Inverter
- SMPS
•
NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
•
Qualified according to JEDEC for target applications
•
Pb-free lead plating; RoHS compliant
•
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
SGB07N120
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25°C
T
C
= 100°C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150°C
Gate-emitter voltage
Avalanche energy, single pulse
I
C
= 8A,
V
CC
= 50V,
R
GE
= 25Ω, start at
T
j
= 25°C
Short circuit withstand time
Power dissipation
T
C
= 25°C
Operating junction and storage temperature
Soldering temperature (reflow soldering, MSL1)
T
j
,
T
stg
T
s
-55...+150
245
°C
2
1
C
G
E
PG-TO-263-3-2 (D²-PAK)
V
CE
1200V
I
C
8A
E
off
0.7mJ
T
j
150°C
Marking
Package
GB07N120 PG-TO-263-3-2
Symbol
V
CE
I
C
Value
1200
16.5
7.9
Unit
V
A
I
Cpul s
-
V
GE
E
AS
t
SC
P
tot
27
27
±20
40
10
125
V
mJ
µs
W
V
GE
= 15V, 100V
≤
V
CC
≤
1200V,
T
j
≤
150°C
1
2
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2_2
Apr 07
Power Semiconductors
SGB07N120
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
1)
Symbol
R
thJC
R
thJA
Conditions
Max. Value
1
40
Unit
K/W
Electrical Characteristic,
at
T
j
= 25
°C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
= 0V ,
I
C
= 5 00
µA
V
CE(sat)
V
G E
= 15 V ,
I
C
= 8 A
T
j
=2 5
°C
T
j
=1 5 0° C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
= 35 0
µA
,
V
C E
=
V
G E
V
C E
=1200V,V
G E
=0V
T
j
=2 5
°C
T
j
=1 5 0° C
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
2)
Symbol
Conditions
Value
min.
1200
2.5
-
3
-
-
-
typ.
-
3.1
3.7
4
-
-
-
6
-
-
-
-
-
720
60
40
70
7
75
max.
-
3.6
4.3
5
Unit
V
µA
100
400
100
-
870
75
50
90
-
-
nC
nH
A
nA
S
pF
I
GES
g
fs
C
iss
C
oss
C
rss
Q
Gate
L
E
I
C(SC)
V
C E
=0V,V
G E
=20V
V
C E
= 20 V ,
I
C
= 8 A
V
C E
= 25 V ,
V
G E
= 0V ,
f=
1 MH z
V
C C
= 96 0 V,
I
C
=8 A
V
G E
= 15 V
V
G E
= 15 V ,t
S C
≤
10
µs
10 0 V≤
V
C C
≤
12 0 0 V,
T
j
≤
1 5 0° C
-
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
1)
2
Power Semiconductors
2
Rev. 2_2
Apr 07
SGB07N120
Switching Characteristic, Inductive Load,
at
T
j
=25
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=2 5
°C
,
V
C C
= 80 0 V,
I
C
= 8 A,
V
G E
= 15 V /0 V ,
R
G
= 47
Ω,
1)
L
σ
=1 8 0n H,
1)
C
σ
= 4 0p F
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
27
29
440
21
0.6
0.4
1.0
35
38
570
27
0.8
0.55
1.35
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
Switching Characteristic, Inductive Load,
at
T
j
=150
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=1 5 0° C
V
C C
= 80 0 V,
I
C
= 8 A,
V
G E
= 15 V /0 V ,
R
G
= 47
Ω,
1)
L
σ
=1 8 0n H,
1)
C
σ
= 4 0p F
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
30
26
490
30
1.0
0.7
1.7
36
31
590
36
1.2
0.9
2.1
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
1)
Leakage inductance L
σ
and stray capacity C
σ
due to dynamic test circuit in figure E.
Power Semiconductors
3
Rev. 2_2
Apr 07
SGB07N120
35A
30A
10A
I
c
t
p
=5
µ
s
15
µ
s
I
C
,
COLLECTOR CURRENT
20A
15A
T
C
=80°C
I
C
,
COLLECTOR CURRENT
25A
50
µ
s
200
µ
s
1A
1ms
T
C
=110°C
10A
5A
0A
10Hz
I
c
0.1A
DC
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
≤
150°C,
D =
0.5,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 47Ω)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25°C,
T
j
≤
150°C)
150W
20A
125W
100W
75W
I
C
,
COLLECTOR CURRENT
50°C
75°C
100°C
125°C
P
tot
,
POWER DISSIPATION
15A
10A
50W
5A
25W
0W
25°C
0A
25°C
50°C
75°C
100°C
125°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(T
j
≤
150°C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
≤
15V,
T
j
≤
150°C)
Power Semiconductors
4
Rev. 2_2
Apr 07
SGB07N120
25A
25A
20A
20A
V
GE
=17V
I
C
,
COLLECTOR CURRENT
15A
10A
15V
13V
11V
9V
7V
I
C
,
COLLECTOR CURRENT
15A
10A
V
GE
=17V
15V
13V
11V
9V
7V
5A
5A
0A
0V
1V
2V
3V
4V
5V
6V
7V
0A
0V
1V
2V
3V
4V
5V
6V
7V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristics
(T
j
= 25°C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristics
(T
j
= 150°C)
V
CE(sat)
,
COLLECTOR
-
EMITTER SATURATION VOLTAGE
25A
6V
I
C
=16A
5V
20A
I
C
,
COLLECTOR CURRENT
4V
15A
T
J
=+150°C
T
J
=+25°C
10A
T
J
=-40°C
I
C
=8A
I
C
=4A
3V
2V
5A
1V
0A
3V
5V
7V
9V
11V
0V
-50°C
0°C
50°C
100°C
150°C
V
GE
,
GATE
-
EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(V
CE
= 20V)
T
j
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
GE
= 15V)
Power Semiconductors
5
Rev. 2_2
Apr 07
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