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CMPT3904G-TR

产品描述Bipolar Transistors - BJT NPN Gen Purpose
产品类别半导体    分立半导体   
文件大小398KB,共3页
制造商Central Semiconductor
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CMPT3904G-TR概述

Bipolar Transistors - BJT NPN Gen Purpose

CMPT3904G-TR规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
Central Semiconductor
产品种类
Product Category
Bipolar Transistors - BJT
RoHSDetails
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
SOT-23-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max40 V
Collector- Base Voltage VCBO60 V
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage300 mV
Maximum DC Collector Current200 mA
Gain Bandwidth Product fT300 MHz
最小工作温度
Minimum Operating Temperature
- 65 C
最大工作温度
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max300
系列
Packaging
Cut Tape
系列
Packaging
MouseReel
系列
Packaging
Reel
Continuous Collector Current200 mA
DC Collector/Base Gain hfe Min30 at 100 mA, 1 V
Pd-功率耗散
Pd - Power Dissipation
350 mW
工厂包装数量
Factory Pack Quantity
3000
单位重量
Unit Weight
0.000282 oz

文档预览

下载PDF文档
CMPT3904 CMPT3904G*
CMPT3906 CMPT3906G*
NPN
PNP
w w w. c e n t r a l s e m i . c o m
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
DESCRIPTION:
These CENTRAL SEMICONDUCTOR devices are
complementary silicon transistors manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for small signal general
purpose amplifier and switching applications.
SOT-23 CASE
*
Device is
Halogen Free
by design
MARKING CODES: CMPT3904:
CMPT3906:
CMPT3904G*:
CMPT3906G*:
C1A
C2A
CG1
CG2
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
CMPT3904
CMPT3906
CMPT3904G* CMPT3906G*
60
40
40
6.0
200
350
-65 to +150
357
CMPT3906
CMPT3906G*
MIN
MAX
-
50
-
40
40
5.0
-
-
0.65
-
60
80
100
60
30
50
-
-
-
0.25
0.40
0.85
0.95
-
-
300
-
-
40
5.0
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C)
SYMBOL
TEST CONDITIONS
ICEV
VCE=30V, VEB=3.0V
IBL
VCE=30V, VEB=3.0V
BVCBO
IC=10μA
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
IC=1.0mA
IE=10μA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA,
IC=50mA,
IB=1.0mA
IB=5.0mA
IC=0.1mA
CMPT3904
CMPT3904G*
MIN
MAX
-
50
-
60
40
6.0
-
-
0.65
-
40
70
100
60
30
50
-
-
-
0.20
0.30
0.85
0.95
-
-
300
-
-
UNITS
nA
nA
V
V
V
V
V
V
V
VCE=1.0V,
VCE=1.0V,
IC=1.0mA
VCE=1.0V, IC=10mA
VCE=1.0V, IC=50mA
VCE=1.0V, IC=100mA
R7 (1-February 2010)

CMPT3904G-TR相似产品对比

CMPT3904G-TR CMPT3906-TR13
描述 Bipolar Transistors - BJT NPN Gen Purpose Bipolar Transistors - BJT Complementary Trans 40Vcbo 40Ceo 350mW
Product Attribute Attribute Value Attribute Value
制造商
Manufacturer
Central Semiconductor Central Semiconductor
产品种类
Product Category
Bipolar Transistors - BJT Bipolar Transistors - BJT
RoHS Details Details
工厂包装数量
Factory Pack Quantity
3000 10000
系列
Packaging
Reel Reel

 
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