Freescale Semiconductor
Technical Data
Document Number: MMRF1014N
Rev. 0, 7/2014
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for Class A or Class AB power amplifier applications with
frequencies up to 2000 MHz. Suitable for analog and digital modulation and
multicarrier amplifier applications.
Typical Two--Tone Performance @ 1960 MHz, 28 Vdc, I
DQ
= 50 mA,
P
out
= 4 W PEP
Power Gain — 18 dB
Drain Efficiency — 33%
IMD — --34 dBc
Typical Two--Tone Performance @ 900 MHz, 28 Vdc, I
DQ
= 50 mA,
P
out
= 4 W PEP
Power Gain — 19 dB
Drain Efficiency — 33%
IMD — --39 dBc
Capable of Handling 5:1 VSWR @ 28 Vdc, 1960 MHz, 4 W CW Output Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
On--Chip RF Feedback for Broadband Stability
Integrated ESD Protection
In Tape and Reel. T1 Suffix = 1,000 Units,16 mm Tape Width, 7--inch Reel.
Gate
MMRF1014NT1
1-
-2000 MHz, 4 W, 28 V
CLASS A/AB
RF POWER MOSFET
PLD-
-1.5
PLASTIC
Drain
Note: The center pad on the backside of
the package is the source terminal
for the transistor.
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
T
stg
T
J
Value
--0.5, +68
--0.5, +12
-- 65 to +150
150
Unit
Vdc
Vdc
C
C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 76C, 4 W PEP, Two--Tone
Case Temperature 79C, 4 W CW
Symbol
R
JC
Value
(1,2)
8.8
8.5
Unit
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1C
A
IV
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor, Inc., 2014. All rights reserved.
MMRF1014NT1
1
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
C
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 50 mAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 50 mAdc)
Fixture Gate Quiescent Voltage
(1)
(V
DD
= 28 Vdc, I
D
= 50 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 50 mAdc)
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
21
25
30
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.2
—
2.2
—
2
2.7
3
0.27
2.7
—
4.2
0.37
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
10
500
Adc
Adc
nAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 50 mA, P
out
= 4 W PEP, f1 = 1960 MHz,
f2 = 1960.1 MHz, Two--Tone Test
Power Gain
Drain Efficiency
Intermodulation Distortion
Input Return Loss
G
ps
D
IMD
IRL
16.5
28
—
—
18
33
--34
--12
20
—
--28
--10
dB
%
dBc
dB
Typical Performance
(In Freescale 900 MHz Demo Board, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 50 mA, P
out
= 4 W PEP,
f = 900 MHz, Two--Tone Test, 100 kHz Tone Spacing
Power Gain
Drain Efficiency
Intermodulation Distortion
Input Return Loss
G
ps
D
IMD
IRL
—
—
—
—
19
33
--39
--12
—
—
—
—
dB
%
dBc
dB
1. V
GG
=
11
/
10
x V
GS(Q)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board.
Refer to Test Circuit Schematic.
MMRF1014NT1
2
RF Device Data
Freescale Semiconductor, Inc.
V
BIAS
+
C8
R1
V
SUPPLY
R2
C1
C7
Z5
Z10
C3
C4
C5
RF
OUTPUT
RF
INPUT
R3
Z1
C2
Z2
Z3
Z4
DUT
Z6
Z7
Z8
C6
Z9
Z1
Z2
Z3
Z4
Z5
Z6
0.054 x 0.430 Microstrip
0.054 x 0.137 Microstrip
0.580 x 0.420 Microstrip
0.580 x 0.100 Microstrip
0.025 x 0.680 Microstrip
0.210 x 0.100 Microstrip
Z7
Z8
Z9
Z10
PCB
0.210 x 1.220 Microstrip
0.054 x 0.680 Microstrip
0.054 x 0.260 Microstrip
0.025 x 0.930 Microstrip
Arlon CuClad 250GX--0300--55--22, 0.020,
r
= 2.5
Figure 2. MMRF1014NT1 Test Circuit Schematic
Table 6. MMRF1014NT1 Test Circuit Component Designations and Values
Part
C1
C2, C3, C6, C7
C4, C5
C8
R1
R2
R3
Description
100 nF Chip Capacitor
9.1 pF Chip Capacitors
10
F,
50 V Chip Capacitors
10
F,
35 V Tantalum Chip Capacitor
1 k, 1/4 W Chip Resistor
10 k, 1/4 W Chip Resistor
10
,
1/4 W Chip Resistor
Part Number
CDR33BX104AKYS
ATC100B9R1CT500XT
GRM55DR61H106KA88B
T490D106K035AT
CRCW12061001FKEA
CRCW12061002FKEA
CRCW120610R0FKEA
Manufacturer
Kemet
ATC
Murata
Kemet
Vishay
Vishay
Vishay
MMRF1014NT1
RF Device Data
Freescale Semiconductor, Inc.
3
25
C8
R1
R2
C1
C7
C3
C4
C5
C2
R3
C6
Figure 3. MMRF1014NT1 Test Circuit Component Layout
MMRF1014NT1
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
18.4
18.2
18
G
ps
, POWER GAIN (dB)
17.8
17.6
17.4
17.2
17
16.8
16.6
16.4
1930
1940
1950
IM3
1960
1970
1980
f, FREQUENCY (MHz)
IRL
V
DD
= 28 Vdc, P
out
= 2 W (Avg.)
I
DQ
= 50 mA, 100 kHz Tone Spacing
D
34
33
32
31
30
--30
--31
IM3 (dBc)
--32
--33
--34
--35
1990
D
, DRAIN
EFFICIENCY (%)
--8
--12
--16
--20
--24
--28
7th Order
0.01
0.1
1
10
IRL, INPUT RETURN LOSS (dB)
G
ps
Figure 4. Two-
-Tone Wideband Performance
@ P
out
= 2 Watts Avg.
20
19
G
ps
, POWER GAIN (dB)
18
17
16
25 mA
15
14
0.01
V
DD
= 28 Vdc
f1 = 1960 MHz, f2 = 1960.1 MHz
Two--Tone Measurements
0.1
1
10
20
--10
--20
--30
--40
--50
--60
--70
--80
3rd Order
IMD, INTERMODULATION DISTORTION (dBc)
I
DQ
= 75 mA
62.5 mA
50 mA
37.5 mA
V
DD
= 28 Vdc, I
DQ
= 50 mA
f1 = 1960 MHz, f2 = 1960.1 MHz
Two--Tone Measurements
5th Order
P
out
, OUTPUT POWER (WATTS) PEP
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Two-
-Tone Power Gain versus
Output Power
--25
--30
--35
--40
--45
--50
--55
--60
0.1
1
5th Order
7th Order
10
100
V
DD
= 28 Vdc, P
out
= 2 W (Avg.), I
DQ
= 50 mA
(f1 + f2)/2 = Center Frequency of 1960 MHz
P
out
, OUTPUT POWER (dBm)
47
45
43
41
39
37
35
33
TWO--TONE SPACING (MHz)
14
Figure 6. Intermodulation Distortion Products
versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
P6dB = 38.73 dBm (7.465 W)
P3dB = 38.22 dBm (6.637 W)
Ideal
3rd Order
P1dB = 37.61 dBm (5.768 W)
Actual
V
DD
= 28 Vdc, I
DQ
= 50 mA
Pulsed CW, 8
sec(on),
1 msec(off)
f = 1960 MHz
16
18
20
22
24
26
P
in
, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulsed CW Output Power versus
Input Power
MMRF1014NT1
RF Device Data
Freescale Semiconductor, Inc.
5
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