VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series
www.vishay.com
Vishay Semiconductors
Power Rectifiers Diodes (T-Modules), 40 A to 110 A
FEATURES
• Electrically isolated base plate
• Types up to 1200 V
RRM
• 3500 V
RMS
isolating voltage
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL E78996 approved
D-55 (T-module)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
I
F(AV)
Type
V
RRM
Package
Circuit
40 A to 110 A
Modules - Diode, High Voltage
100 V to 1200 V
D-55 (T-module)
Single diode
DESCRIPTION / APPLICATIONS
These series of T-modules use standard recovery power
rectifier diodes. The semiconductors are electrically isolated
from the metal base, allowing common heatsink and
compact assembly to be built.
Applications include power supplies, battery charges,
welders, motor controls and general industrial current
rectification.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
I
2
t
V
RRM
T
J
50 Hz
60 Hz
50 Hz
60 Hz
CHARACTERISTICS
T
C
T40HF
40
85
63
570
600
1630
1500
16 300
T70HF
70
85
110
1200
1250
7100
6450
70 700
T85HF
85
85
134
1700
1800
14 500
13 500
148 700
-40 to +150
100 to 1200
T110HF
110
85
173
2000
2100
20 500
18 600
204 300
UNITS
A
°C
A
A
A
2
s
A
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
10
20
VS-T40HF...
VS-T70HF...
VS-T85HF...
VS-T110HF...
40
60
80
100
120
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
100
200
400
600
800
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
150
300
500
700
900
1100
1300
100
I
RRM
MAXIMUM
AT T
J
= 25 °C
μA
Revision: 20-Dec-16
Document Number: 93587
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
VALUES
PARAMETER
Maximum average forward
current at case temperature
Maximum RMS forward current
Maximum peak, one-cycle
forward, non-repetitive surge
current
SYMBOL
TEST CONDITIONS
T40HF T70HF
I
F(AV)
I
F(RMS)
t = 10 ms
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold
voltage
High level value of threshold
voltage
Low level value of forward slope
resistance
High level value of forward slope
resistance
Maximum forward voltage drop
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sinusoidal
half wave,
initial T
J
=
T
J
maximum
180° conduction, half sine wave
40
85
63
570
600
480
500
1630
1500
1150
1050
70
85
110
1200
1250
1000
1050
7100
6450
5000
4570
T85HF
85
85
134
1700
1800
1450
1500
14 500
13 500
10 500
9600
T110HF
110
85
173
2000
2100
1700
1780
20 500
18 600
14 500
13 200
A
2
s
A
2
s
A
A
°C
A
UNITS
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
),
T
J
maximum
(I >
x I
F(AV)
), T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
),
T
J
maximum
(I >
x I
F(AV)
), T
J
maximum
I
FM
=
x I
F(AV)
, T
J
= 25 °C,
t
p
= 400 μs square pulse
Average power = V
F(TO)
x I
F(AV)
+ r
f
x (I
F(RMS)
)
2
16 300 70 700 148 700 204 300
0.66
0.84
4.3
3.1
0.76
0.95
2.4
1.7
0.68
0.90
1.76
1.08
0.68
V
0.86
1.56
m
1.12
V
FM
1.30
1.35
1.27
1.35
V
BLOCKING
PARAMETER
Maximum peak reverse
leakage current
RMS isolation voltage
SYMBOL
I
RRM
V
ISOL
T
J
= 150 °C
50 Hz, circuit to base, all terminals shorted
T
J
= 25 °C, t = 1 s
TEST CONDITIONS
T40HF T70HF T85HF T110HF UNITS
15
3500
15
3500
20
3500
20
3500
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
and storage temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink
Mounting torque,
± 10 %
Approximate weight
Case style
to heatsink
terminals
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface smooth, flat
and greased
Non-lubricated
threads
M3.5 mounting screws
(1)
M5 screw terminals
1.36
TEST CONDITIONS
VALUES
T40HF T70HF T85HF T110HF
-40 to +150
0.69
0.2
1.3 ± 10 %
3 ± 10 %
54
D-55 (T-module)
Nm
g
0.62
0.47
K/W
UNITS
°C
See dimensions - link at the end of datasheet
Note
(1)
A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the
compound
Revision: 20-Dec-16
Document Number: 93587
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series
www.vishay.com
R
CONDUCTION PER JUNCTION
DEVICES
T40HF...
T70HF...
T85HF...
T110HF...
SINUSOIDAL CONDUCTION AT T
J
MAXIMUM
180°
0.12
0.09
0.08
0.05
120°
0.14
0.11
0.09
0.07
90°
0.18
0.14
0.12
0.09
60°
0.27
0.20
0.18
0.14
30°
0.46
0.35
0.31
0.23
RECTANGULAR CONDUCTION AT T
J
MAXIMUM
180°
0.09
0.07
0.06
0.05
120°
0.15
0.11
0.10
0.08
90°
0.20
0.15
0.13
0.10
60°
0.28
0.21
0.19
0.15
30°
0.46
0.35
0.31
0.24
K/W
UNITS
Vishay Semiconductors
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Maximum Allowable Case T
emperature (°C)
Maximum Allowable Cas T
e emperature (°C)
150
140
130
120
110
100
90
80
70
60
0
10
20
30
40
50
Average Forward Current (A)
30°
60°
Conduction Angle
T
40HF S
.. eries
R
thJC
(DC) = 1.36 K/ W
150
140
130
120
110
100
90
80
70
60
0
10
20
30
40
50
60
70
Average F
orward Current (A)
30°
60°
90°
120°
180°
DC
Conduc tion Period
T
40HF S
.. eries
R
thJC
(DC) = 1.36 K/ W
90°
120°
180°
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Average Forward Power Loss (W)
45
40
35
30
25
20
15
10
5
0
0
5
10
15
20
25
30
35
40
0
25
50
75
100
125
150
Average F
orward Current (A)
Maximum Allowable Ambient T
emperature (°C)
180°
120°
90°
60°
30°
RMS Limit
5K
/W
5
1.
W
K/
R
th
1
2
3
W
K/
K/
W
A
S
W
K/
.5
=0
K/
W
e lt
-D
a
R
7K
/W
Conduc tion Angle
10
K/ W
T
40HF S
.. eries
T
J
= 150°C
Fig. 3 - Forward Power Loss Characteristics
Revision: 20-Dec-16
Document Number: 93587
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series
www.vishay.com
Vishay Semiconductors
Maximum Average Forward Pow er Loss (W)
70
60
50
40
30 RMSLimit
20
10
0
0
10
20
30
40
50
60
0
70
25
50
75
100
125
150
Average F
orward Current (A)
Maximum Allowable Ambient T
emperature (°C)
Conduc tion Period
DC
180°
120°
90°
60°
30°
R
th
A
S
1
1.
5
K/
W
K/
W
=
5
0.
W
K/
ta
el
-D
2K
/W
R
3K
/W
5 K/
7 K/
W
W
T
40HF S
.. eries
T
J
= 150°C
10 K/ W
Fig. 4 - Forward Power Loss Characteristics
Maximum Allowable Cas T
e emp erature (°C)
Peak Ha lf S Wave Forw ard Current (A)
ine
550
500
450
400
350
300
250
200
150
1
150
140
130
120
110
100
90
80
70
60
0
10
20
30
40
50
60
70
80
Average Forward Current (A)
30°
60°
90°
120°
180°
Conduction Angle
At Any Ra ted Loa d Cond ition And With
Rated V
RRM
App lied Following S
urge.
Initial T
J
= 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
T
70HF S
.. eries
R
thJC
(DC) = 0.69 K/ W
T
40HF.. S
eries
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 7 - Current Ratings Characteristics
550
500
450
400
350
300
250
200
150
100
0.01
Maximum Non R
epetitive S
urge Current
Versus Pulse T
rain Duration.
Initial T
J
= 150°C
No Voltage R
eapplied
R
ated V
RRM
R
eapplied
Maximum Allowable Case T
emperature (°C)
Peak Half S
ine Wave F
orward Current (A)
600
150
140
130
120
110
100
90
80
70
60
0
20
40
60
80
100
120
Average Forward Current (A)
30°
60°
90°
120°
180°
DC
Conduc tion Period
T
70HF.. S
eries
R
thJC
(DC) = 0.69 K/ W
T
40HF S
.. eries
0.1
Pulse T
rain Duration (s)
1
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 8 - Current Ratings Characteristics
Revision: 20-Dec-16
Document Number: 93587
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series
www.vishay.com
Vishay Semiconductors
180°
120°
90°
60°
30°
RMS Limit
=
A
hS
R
t
Maximum Average Forward Power Loss (W)
90
5
0.
7
0.
80
70
60
50
40
30
20
10
0
0
10
W
K/
1K
/W
1.5
K/
W
W
K/
0.3
W
K/
ta
el
-D
2K
/W
R
3K
/W
Conduc tion Angle
5 K/
W
T
70HF.. S
eries
T
J
= 150°C
20
30
40
50
60
7 K/ W
70
0
25
50
75
100
125
150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
120
100
80
60
40
20
0
0
20
40
60
80
100
120
0
25
50
75
100
125
150
Average Forward Current (A)
Maximum Allowable Ambient T
emperature (°C)
DC
180°
120°
90°
60°
30°
hS
R
t
0.
5K
/W
0. 7
K/
W
1K
/W
1.5
K/ W
2K/
W
3
0.
W
K/
A
=
2
0.
W
K/
ta
el
-D
R
RMS Limit
Conduc tion Period
3K/ W
5K/ W
T
70HF.. S
eries
T
J
= 150°C
Fig. 10 - Forward Power Loss Characteristics
Peak Half S Wave Forward Current (A)
ine
Peak Half S Wave Forward Current (A)
ine
1100
1000
900
800
700
600
500
400
300
1
1200
1100
1000
900
800
700
600
500
400
300
200
0.01
At Any Ra ted Loa d Cond ition And With
Rated V
RRM
App lied Following Surge.
Initial T
J
= 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Maximum Non Repetitive S
urge Current
Versus Pulse T
rain Duration.
Initial T
J
= 150°C
No Voltage Reapplied
R
ated V
RRM
Reapplied
T
70HF.. S
eries
T
70HF S
.. eries
10
100
0.1
Pulse T
rain Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 11 - Maximum Non-Repetitive Surge Current
Fig. 12 - Maximum Non-Repetitive Surge Current
Revision: 20-Dec-16
Document Number: 93587
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
