MBRS1540T3
Surface Mount
Schottky Power Rectifier
SMB Power Surface Mount Package
These devices employ the Schottky Barrier principle in a
metal−to−silicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.
Features
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SCHOTTKY BARRIER
RECTIFIER
1.5 AMPERES, 40 VOLTS
•
•
•
•
•
Compact Package with J−Bend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
Guard−Ring for Over−Voltage Protection
Low Forward Voltage Drop
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
SMB
CASE 403A
Mechanical Characteristics
•
•
•
•
•
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 95 mg (Approximately)
Cathode Polarity Band
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
•
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated V
R
, T
C
= 100°C)
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave,
100 kHz, T
C
= 105°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Storage/Operating Case Temperature
Operating Junction Temperature
Voltage Rate of Change
(Rated V
R
, T
J
= 25°C)
Symbol
V
RRM
V
RWM
V
R
I
O
I
FRM
Value
40
Unit
V
MARKING DIAGRAM
AYWW
BGJG
G
BGJ
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
1.5
3.0
A
A
Device
MBRS1540T3G
Package
SMB
(Pb−Free)
Shipping
†
2500/Tape & Reel
I
FSM
40
A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
T
stg
, T
C
T
J
dv/dt
−55 to +150
−55 to +125
10,000
°C
°C
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
©
Semiconductor Components Industries, LLC, 2005
1
February, 2018 − Rev. 4
Publication Order Number:
MBRS1540T3/D
MBRS1540T3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Lead (Note 1)
Thermal Resistance,
Junction−to−Ambient (Note 2)
Symbol
R
qJL
R
qJA
Value
24
80
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3)
see Figure 2
Maximum Instantaneous Reverse Current (Note 3)
see Figure 4
(V
R
= 40 V)
(V
R
= 20 V)
(i
F
= 1.5 A)
(i
F
= 3.0 A)
I
R
v
F
T
J
= 25°C
0.46
0.54
T
J
= 25°C
0.8
0.1
T
J
= 125°C
0.39
0.54
T
J
= 100°C
5.7
1.6
mA
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Mounted with minimum recommended pad size, PC Board FR4.
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
3. Pulse Test: Pulse Width
≤
250
ms,
Duty Cycle
≤
2.0%.
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2
MBRS1540T3
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
100
100
10
10
T
J
= 125°C
1.0
100°C
- 40°C
0.1
0.1
0.3
0.5
25°C
T
J
= 125°C
1.0
100°C
25°C
0.1
0.1
0.3
0.5
0.7
0.9
V
F
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.7
0.9
v
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
100E-3
IR , REVERSE CURRENT (AMPS)
100E-3
IR , MAXIMUM REVERSE CURRENT (AMPS)
10E-3
T
J
= 125°C
10E-3
T
J
= 125°C
1.0E-3
100°C
1.0E-3
100°C
100E-6
100E-6
25°C
10E-6
25°C
10E-6
1.0E-6
0
10
20
30
40
V
R
, REVERSE VOLTAGE (VOLTS)
1.0E-6
0
10
20
30
40
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
IO , AVERAGE FORWARD CURRENT (AMPS)
FREQ = 20 kHz
dc
2.0
SQUARE WAVE
1.5
Ipk/Io =
p
Ipk/Io = 5.0
Ipk/Io = 10
0.5
0
25
45
65
85
105
125
T
L
, LEAD TEMPERATURE (°C)
Ipk/Io = 20
PFO , AVERAGE POWER DISSIPATION (WATTS)
2.5
1.2
dc
1.0
0.8
Ipk/Io = 5.0
0.6
0.4
0.2
0
0
0.5
1.0
1.5
2.0
2.5
I
O
, AVERAGE FORWARD CURRENT (AMPS)
Ipk/Io = 10
Ipk/Io = 20
SQUARE WAVE
Ipk/Io =
p
1.0
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
MBRS1540T3
TJ , DERATED OPERATING TEMPERATURE (
°
C)
1000
T
J
= 25°C
C, CAPACITANCE (pF)
125
115
43°C/W
105
95
85
93°C/W
75
65
0
5.0
10
15
20
25
30
35
40
V
R
, DC REVERSE VOLTAGE (VOLTS)
63°C/W
80°C/W
R
tja
= 24°C/W
100
10
0
5.0
10
15
20
25
30
35
40
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
Figure 8. Typical Operating Temperature Derating*
R T, TRANSIENT THERMAL RESISTANCE (NORMALIZED)
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of T
J
therefore must include forward and reverse power effects. The allowable operating
T
J
may be calculated from the equation:
T
J
= T
Jmax
− r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable T
J
due to reverse bias under DC conditions only and is calculated as T
J
= T
Jmax
− r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
1.0E+00
50%
20%
10%
5.0%
2.0%
1.0%
1.0E-01
1.0E-02
1.0E-03
R
tjl(t)
= R
tjl*r(t)
1.0E-04
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
R T, TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 9. Thermal Response — Junction to Case
50%
20%
10%
5.0%
2.0%
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0%
R
tjl(t)
= R
tjl*r(t)
1.0E-04
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
Figure 10. Thermal Response — Junction to Ambient
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE J
SCALE 1:1
Polarity Band
H
E
E
SCALE 1:1
Non−Polarity Band
DATE 19 JUL 2012
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.
DIM
A
A1
b
c
D
E
H
E
L
L1
MIN
1.95
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.30
2.47
0.10
0.20
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.077
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.091
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.097
0.008
0.087
0.012
0.156
0.181
0.220
0.063
b
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
A
GENERIC
MARKING DIAGRAM*
AYWW
XXXXXG
G
Polarity Band
AYWW
XXXXXG
G
Non−Polarity Band
L
L1
c
A1
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
XXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “
G”,
may or may not be present.
SCALE 8:1
mm
inches
2.159
0.085
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
STATUS:
NEW STANDARD:
DESCRIPTION:
98ASB42669B
ON SEMICONDUCTOR STANDARD
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
SMB
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