RURD4120, RURD4120S
Data Sheet
January 2002
4A, 1200V Ultrafast Diodes
The RURD4120 and RURD4120S are ultrafast diodes with
soft recovery characteristics (t
rr
< 70ns). They have low
forward voltage drop and are silicon nitride passivated
ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and ultrafast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Formerly developmental type TA49036.
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <70ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
PART NUMBER
RURD4120
RURD4120S
PACKAGE
TO-251
TO-252
BRAND
UR4120
UR4120
Packaging
JEDEC STYLE TO-251
ANODE
CATHODE
CATHODE
(FLANGE)
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252 variant in the tape and reel, i.e.,
RURD4120S9A.
Symbol
K
JEDEC STYLE TO-252
CATHODE
(FLANGE)
A
CATHODE
ANODE
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RURD4120, RURD4120S
UNITS
V
V
V
A
A
A
W
mJ
o
C
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
F(AV)
(T
C
= 152
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
1200
1200
1200
4
8
40
50
10
-65 to 175
©2002 Fairchild Semiconductor Corporation
RURD4120, RURD4120S Rev. B
RURD4120, RURD4120S
Electrical Specifications
SYMBOL
V
F
I
F
= 4A
I
F
= 4A, T
C
= 150
o
C
I
R
V
R
= 1200V
V
R
= 1200V, T
C
= 150
o
C
t
rr
I
F
= 1A, dI
F
/dt = 200A/
µ
s
I
F
= 4A, dI
F
/dt = 200A/
µ
s
t
a
t
b
Q
RR
C
J
R
θ
JC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery time.
C
J
= Junction capacitance.
R
θ
JC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
I
F
= 4A, dI
F
/dt = 200A/
µ
s
I
F
= 4A, dI
F
/dt = 200A/
µ
s
I
F
= 4A, dI
F
/dt = 200A/
µ
s
V
R
= 10V, I
F
= 0A
T
C
= 25
o
C, Unless Otherwise Specified
TEST CONDITION
MIN
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
40
28
335
15
-
MAX
2.1
1.9
100
500
70
90
-
-
-
-
3
UNITS
V
V
µ
A
µ
A
ns
ns
ns
ns
nC
pF
o
C/W
Typical Performance Curves
20
I
R
, REVERSE CURRENT (µA)
100
175
o
C
10
100
o
C
I
F
, FORWARD CURRENT (A)
10
1
175
o
C
100
o
C
1
25
o
C
0.1
0.01
25
o
C
0.5
0
0.5
1
1.5
2
2.5
3
V
F
, FORWARD VOLTAGE (V)
0.001
0
200
400
600
800
1000
1200
V
R
, REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
©2002 Fairchild Semiconductor Corporation
RURD4120, RURD4120S Rev. B
RURD4120, RURD4120S
Typical Performance Curves
75
(Continued)
T
C
= 25
o
C, dI
F
/dt = 200A/µs
t, RECOVERY TIMES (ns)
100
T
C
= 100
o
C, dI
F
/dt = 200A/µs
80
t, RECOVERY TIMES (ns)
60
t
rr
45
t
rr
60
30
t
a
t
b
40
t
a
t
b
15
20
0
0.5
1
I
F
, FORWARD CURRENT (A)
4
0
0.5
1
I
F
, FORWARD CURRENT (A)
4
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
125
T
C
= 175
o
C, dI
F
/dt = 200A/µs
t, RECOVERY TIMES (ns)
100
5
4
DC
3
SQ. WAVE
2
t
rr
75
50
t
a
t
b
25
1
0
0.5
0
125
135
145
155
165
175
T
C
, CASE TEMPERATURE (
o
C)
1
I
F
, FORWARD CURRENT (A)
4
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
75
C
J
, JUNCTION CAPACITANCE (pF)
60
45
30
15
0
0
50
100
150
200
V
R
, REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
©2002 Fairchild Semiconductor Corporation
RURD4120, RURD4120S Rev. B
RURD4120, RURD4120S
Test Circuits and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
L
DUT
R
G
V
GE
t
1
t
2
CURRENT
SENSE
+
V
DD
0
I
F
dI
F
dt
ta
trr
tb
IGBT
-
0.25 I
RM
I
RM
FIGURE 8. t
rr
TEST CIRCUIT
I = 1A
L = 20mH
R < 0.1Ω
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
Q
1
V
DD
DUT
R
+
V
DD
I V
FIGURE 9. t
rr
WAVEFORMS AND DEFINITIONS
V
AVL
I
L
I
L
-
t
0
t
1
t
2
t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
©2002 Fairchild Semiconductor Corporation
RURD4120, RURD4120S Rev. B
TRADEMARKS
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not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
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CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
DISCLAIMER
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®
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LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
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®
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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