a. Pulse width limited by maximum junction temperature.
b. Surface mounted on FR4 board, t
≤
5 s.
c. Surface Mounted on FR4 board.
For Spice model information via the worldwide web: www.vishay.com/www/product/spice.htm.
Document Number: 72315
S09-0130-Rev. C, 02-Feb-09
www.vishay.com
1
Symbol
R
thJA
R
thJF
Typical
75
120
40
Maximum
100
166
50
°C/W
Unit
Si2319DS
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Limits
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
Turn-On Time
Turn-Off Time
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 20 V, R
L
= 20
Ω
I
D
≅
- 1.0 A, V
GEN
= - 4.5 V
R
g
= 6
Ω
7
15
25
25
15
25
40
40
ns
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
V
DS
= - 20 V, V
GS
= 0 V, f = 1 MHz
V
DS
= - 20 V, V
GS
= - 10 V
I
D
≅
- 3 A
11.3
1.7
3.3
470
85
65
pF
17
nC
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
GS
= 0 V, I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 40 V, V
GS
= 0 V
V
DS
= - 40 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
- 5 V, V
GS
= - 10 V
V
GS
=
- 10 V, I
D
= - 3.0 A
V
GS
= - 4.5 V, I
D
= - 2.4 A
V
DS
= - 5 V, I
D
= - 3.0 A
I
S
= - 1.25 A, V
GS
= 0 V
-6
0.065
0.100
7.0
- 0.8
- 1.2
0.082
0.130
- 40
-1
- 3.0
± 100
-1
- 10
V
nA
µA
A
Ω
S
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test: PW
≤
300 µs duty cycle
≤
2 %.
b. For design aid only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
据国外媒体报道，英特尔将处理器价格最高下调31%，但降价整体来说是有限的。 根据英特尔7月20日的新定价单来看，Core 2 Duo E8500(3.16GHz)价格降幅最高，从266美元下调至183美元，降幅达31%；Core 2 Duo E7200 (2.53GHz)次之，从133美元下调至113美元，降幅15%。 其他降价处理器还有四核Q6600(2.4GHz)，从224美...[详细]
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