SiR403EDP-T1-GE3 (Lead (Pb)-free and Halogen-free)
Bottom
View
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
Symbol
V
DS
V
GS
Limit
- 30
± 25
- 40
e
- 40
e
- 21.9
b,c
- 17.5
b,c
- 60
- 40
e
- 4.2
b, c
- 40
80
56.8
36.4
5
b,c
3.2
b,c
- 55 to 150
260
Unit
V
Continuous Drain Current (T
J
= 150 °C)
I
D
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
I
DM
I
S
I
AS
E
AS
A
mJ
T
C
= 25 °C
T
C
= 70 °C
Maximum Power Dissipation
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
f,g
P
D
W
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Case (Drain)
t
10 s
Steady State
Symbol
R
thJA
R
thJC
Typical
20
1.7
Maximum
25
2.2
Unit
°C/W
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 68 °C/W.
e. Package Limited
f. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
g. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 66744
S13-0302-Rev. A, 11-Feb-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiR403EDP
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 10 A, V
GS
= 0 V
- 0.78
35
25
19
16
T
C
= 25 °C
- 5.8
- 60
- 1.2
53
38
A
V
ns
nC
ns
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 15 V, R
L
= 1.5
I
D
- 10 A, V
GEN
= - 10 V, R
g
= 1
V
DD
= 0 V, R
L
= 1.5
I
D
- 10 A, V
GEN
= - 4.5 V, R
g
= 1
f = 1 MHz
0.3
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 17.3 A
V
DS
= - 15 V, V
GS
= - 5 V, I
D
= - 17.3 A
V
DS
= - 15 V, V
GS
= 0 V, f = 1 MHz
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 25 V
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-
5 V, V
GS
= - 10 V
V
GS
½-
10 V, I
D
= - 13 A
V
GS
½-
6 V, I
D
= - 10 A
V
GS
½-
4.5 V, I
D
= - 8 A
V
DS
= - 15 V, I
D
= - 13 A
- 20
0.0054
0.0068
0.0093
44
4620
880
820
102
66
16
28
1.3
70
70
45
27
18
15
52
14
2.6
105
105
68
41
30
25
80
25
ns
153
80
nC
pF
0.0065
0.0082
0.0115
S
- 1.2
- 30
- 24
6
- 2.8
± 150
± 15
-1
- 10
A
µA
V
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 66744
S13-0302-Rev. A, 11-Feb-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiR403EDP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.015
T
J
= 25
°C
10
-03
0.012
I
GSS
- Gate Current (mA)
I
GSS
- Gate Current (A)
10
-04
10
-05
10
-06
10
-07
10
-08
0.000
0
6
12
18
24
30
V
GS
- Gate-Source Voltage (V)
10
-09
0
6
12
18
24
30
36
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25
°C
T
J
= 150
°C
10
-02
0.009
0.006
0.003
Gate Current vs. Gate-Source Voltage
60
V
GS
= 10 V thru 5 V
V
GS
= 4 V
45
I
D
- Drain Current (A)
I
D
- Drain Current (A)
6
8
10
Gate Current vs. Gate-Source Voltage
30
4
T
C
= 25
°C
15
2
V
GS
= 3 V
0
0
0.5
1
1.5
2
V
DS
- Drain-to-Source Voltage (V)
0
0
T
C
= 125
°C
T
C
= - 55
°C
2
3
V
GS
- Gate-to-Source Voltage (V)
1
4
Output Characteristics
0.014
7200
Transfer Characteristics
6000
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
0.011
V
GS
= 4.5 V
C
iss
4800
0.008
V
GS
= 6 V
3600
2400
C
oss
1200
C
rss
0.005
V
GS
= 10 V
0.002
0
15
30
I
D
- Drain Current (A)
45
60
0
0
6
12
18
24
V
DS
- Drain-to-Source Voltage (V)
30
On-Resistance vs. Drain Current
Capacitance
Document Number: 66744
S13-0302-Rev. A, 11-Feb-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiR403EDP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
I
D
= 17.3 A
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 15 V
6
V
DS
= 7.5 V
4
V
DS
= 24 V
R
DS(on)
- On-Resistance (Normalized)
1.35
V
GS
= 4.5 V
1.60
I
D
= 13A
V
GS
= 10 V
1.10
0.85
2
0
0
30
60
90
120
Q
g
- Total Gate Charge (nC)
0.60
- 50
- 25
0
25
50
75
100
T
J
- Junction Temperature (
°
C)
125
150
Gate Charge
100
0.020
On-Resistance vs. Junction Temperature
I
D
= 13 A
10
T
J
= 150
°C
R
DS(on)
- On-Resistance (Ω)
0.015
I
S
- Source Current (A)
0.010
T
J
= 125
°C
1
0.005
T
J
= 25
°C
T
J
= 25
°C
0.1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
V
SD
- Source-to-Drain Voltage (V)
1.2
2
6
8
V
GS
- Gate-to-Source Voltage (V)
4
10
Source-Drain Diode Forward Voltage
2.5
I
D
= 250 μA
100
On-Resistance vs. Gate-to-Source Voltage
80
2.15
Power (W)
60
V
GS(th)
(V)
1.8
40
1.45
20
1.1
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
125
150
0
0.001
0.01
0.1
Time (s)
1
10
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
www.vishay.com
4
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 66744
S13-0302-Rev. A, 11-Feb-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiR403EDP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
Limited by R
DS(on)
*
80
1 ms
10
60
I
D
- Drain Current (A)
1
100 ms
1s
10 s
DC
0.01
T
A
= 25
°C
Single Pulse
0.001
0.1
I
D
- Drain Current (A)
10 ms
40
0.1
20
BVDSS Limited
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
70
2.4
Current Derating*
56
1.8
42
Power (W)
Power (W)
1.2
28
0.6
14
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power Junction-to-Case
Power Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 66744
S13-0302-Rev. A, 11-Feb-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
理解PID控制（英语字幕）：https://training.eeworld.com.cn/course/5042This series provides an introduction to proportional-integral-derivative (PID) control.
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