5. Switching characteristics are independent of operating junction temperature.
I
S
I
SM
V
SD
−
−
−
−
−
0.8
0.6
0.75
−
V
A
(V
DD
= 15 Vdc, I
D
= 1.0 Adc,
R
L
= 50
W)
t
d(on)
t
r
t
d(off)
t
f
Q
T
−
−
−
−
−
2.5
1.0
16
8.0
6000
−
−
−
−
−
pC
ns
(V
DS
= 5.0 Vdc)
(V
DS
= 5.0 Vdc)
(V
DG
= 5.0 Vdc)
C
iss
C
oss
C
rss
−
−
−
140
100
40
−
−
−
pF
V
GS(th)
r
DS(on)
1.0
1.7
2.4
Vdc
W
V
(BR)DSS
I
DSS
30
−
−
Vdc
mAdc
Symbol
Min
Typ
Max
Unit
−
−
−
−
−
−
1.0
10
±100
I
GSS
nAdc
−
−
0.08
0.125
0.10
0.145
TYPICAL ELECTRICAL CHARACTERISTICS
2.5
V
DS
= 10 V
I D , DRAIN CURRENT (AMPS)
I D , DRAIN CURRENT (AMPS)
2
2
2.5
V
GS
= 3.75 V
3.5 V
1.5
- 55°C
T
J
= 150°C
0.5
25°C
0
1
1.5
2
2.5
3
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
3.5
1.5
3.25 V
1
1
3.0 V
0.5
2.75 V
2.5 V
0
0
2
4
6
8
10
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
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2
Figure 2. On−Region Characteristics
MGSF1N03L, MVGSF1N03L
TYPICAL ELECTRICAL CHARACTERISTICS
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
0.24
150°C
0.16
0.14
0.12
0.1
0.08
-55°C
0.06
0.04
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
I
D
, DRAIN CURRENT (AMPS)
V
GS
= 10 V
150°C
0.19
V
GS
= 4.5 V
25°C
0.14
25°C
-55°C
0.09
0.04
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
Figure 4. On−Resistance versus Drain Current
RDS(on) , DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
- 55
- 25
0
25
50
75
100
125
150
V
GS
= 10 V
I
D
= 2 A
V
GS
= 4.5 V
I
D
= 1 A
10
V
DS
= 24 V
T
J
= 25°C
8
6
4
I
D
= 2.0 A
2
0
0
1000
2000
3000
4000
5000
6000
T
J
, JUNCTION TEMPERATURE (°C)
Q
T
, TOTAL GATE CHARGE (pC)
Figure 5. On−Resistance Variation with Temperature
Figure 6. Gate Charge
1
I D , DIODE CURRENT (AMPS)
350
300
C, CAPACITANCE (pF)
V
GS
= 0 V
f = 1 MHz
T
J
= 25°C
0.1
T
J
= 150°C
25°C
-55°C
250
200
150
100
C
oss
50
C
rss
0
4
8
12
16
20
0.01
C
iss
0.001
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
V
SD
, DIODE FORWARD VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (Volts)
Figure 7. Body Diode Forward Voltage
Figure 8. Capacitance
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3
MGSF1N03L, MVGSF1N03L
TYPICAL ELECTRICAL CHARACTERISTICS
10
I
D
, DRAIN CURRENT (A)
1
10
ms
100
ms
1 ms
10 ms
0 V < V
GS
< 10 V
Single Pulse
T
J
= 150°C, T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
1
10
0.1
1 ms
0.01
0.1
dc
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 9. Maximum Rated Forward Biased
Safe Operating Area
TRANSIENT THERMAL RESPONSE
−
R
qJA
(°C/W)
1000
D = 0.5
100 0.2
0.1
0.05
10
0.02
0.01
1
SINGLE PULSE
0.00001
0.0001
0.001
0.01
t, TIME (s)
0.1
1
10
100
1000
0.1
0.000001
Figure 10. Thermal Response
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4
MGSF1N03L, MVGSF1N03L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
SEE VIEW C
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
MILLIMETERS
INCHES
DIM
MIN
NOM
MAX
MIN
NOM
MAX
A
0.89
1.00
1.11
0.035
0.040
0.044
A1
0.01
0.06
0.10
0.001
0.002
0.004
b
0.37
0.44
0.50
0.015
0.018
0.020
c
0.09
0.13
0.18
0.003
0.005
0.007
D
2.80
2.90
3.04
0.110
0.114
0.120
E
1.20
1.30
1.40
0.047
0.051
0.055
e
1.78
1.90
2.04
0.070
0.075
0.081
L
0.10
0.20
0.30
0.004
0.008
0.012
0.35
0.54
0.69
0.014
0.021
0.029
L1
H
E
2.10
2.40
2.64
0.083
0.094
0.104
q
0
°
−−−
10
°
0
°
−−−
10
°
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
E
1
2
HE
c
e
b
q
0.25
A
A1
L
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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