†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVBF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
+25 V
t
on
t
d(on)
125
W
PULSE
GENERATOR
50
W
V
in
40 pF
20 dB 50
W
ATTENUATOR
TO SAMPLING
SCOPE
50
W
INPUT
OUTPUT
INVERTED
V
out
INPUT
50%
50
W
1 MW
V
in
10%
PULSE WIDTH
t
r
90%
10%
90%
50%
t
d(off)
90%
t
off
t
f
V
out
(V
in
AMPLITUDE 10 VOLTS)
Figure 1. Switching Test Circuit
Figure 2. Switching Waveform
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2
MMBF170L, NVBF170L
TYPICAL ELECTRICAL CHARACTERISTICS
1.2
1.0
0.8
4.2 V
0.6
0.4
0.2
0
0
1
2
3
4
5
6
4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1.0
V
DS
≥
10 V
I
D
, DRAIN CURRENT (A)
0.8
0.6
0.4
T
J
= 150°C
0.2
0
T
J
= 25°C
T
J
=
−55°C
1
2
3
4
5
6
7
8
V
GS
= 10 V
T
J
= 25°C
5.0 V
I
D
, DRAIN CURRENT (A)
4.5 V
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 4. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
8
7
6
5
4
3
2
1
0
0.15
V
GS
= 10 V
0.25
0.35
0.45
0.55
0.65
0.75
0.85
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5 V
T
J
= 25°C
15
QT
30
25
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
12.5
10
7.5
5
2.5
0
Q
gs
Q
gd
I
D
= 0.5 A
T
J
= 25°C
0
0.5
1
1.5
V
DS
V
GS
20
15
10
5
0
2
Q
g
, TOTAL GATE CHARGE (nC)
Figure 5. On−Resistance vs. Drain Current and
Gate Voltage
0.24
0.22
I
S
, SOURCE CURRENT (A)
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0.1
0.2
0.3
0.4
0.5
0.6
V
GS
= 0 V
T
J
= 25°C
Figure 6. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 7. Diode Forward Voltage vs. Current
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3
MMBF170L, NVBF170L
TYPICAL ELECTRICAL CHARACTERISTICS
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
−60
−20
20
60
T, TEMPERATURE (°C)
100
140
VGS(th), THRESHOLD VOLTAGE (NORMALIZED)
r DS(on), STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
−60
−20
20
60
T, TEMPERATURE (°C)
100
140
V
GS
= 10 V
I
D
= 200 mA
V
DS
= V
GS
I
D
= 1.0 mA
Figure 8. Temperature versus Static
Drain−Source On−Resistance
Figure 9. Temperature versus Gate
Threshold Voltage
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4
MMBF170L, NVBF170L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
q
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10
°
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10
°
D
SEE VIEW C
3
E
1
2
HE
c
e
b
q
0.25
A
A1
L
L1
VIEW C
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
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