Diode
FastSwitchingEmitterControlledDiode
IDW50E60
EmitterControlledDiodeseries
Datasheet
IndustrialPowerControl
IDW50E60
EmitterControlledDiodeseries
FastSwitchingEmitterControlledDiode
Features:
•QualifiedaccordingtoJEDECfortargetapplications
•600VEmitterControlledtechnology
•Fastrecovery
•Softswitching
•Lowreverserecoverycharge
•Lowforwardvoltage
•175°Cjunctionoperatingtemperature
•Easyparalleling
•Pb-freeleadplating;RoHScompliant
Applications:
•SwitchingdiodeforPFCapplicationswithoperatingrangeupto
30kHz
Packagepindefinition:
•Pin1-notconnected
•Pin2-cathode
•Pin3-anode
A
C
1
2
3
KeyPerformanceandPackageParameters
Type
IDW50E60
V
rrm
600V
I
f
50A
V
f
,T
vj
=25°C
1.65V
T
vjmax
175°C
Marking
D50E60
Package
PG-TO247-3
2
Rev.2.2,2014-02-24
IDW50E60
EmitterControlledDiodeseries
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3
Rev.2.2,2014-02-24
IDW50E60
EmitterControlledDiodeseries
Maximumratings
Parameter
Repetitive peak reverse voltage
Diodeforwardcurrent,limitedbyT
vjmax
T
C
=25°C
T
C
=100°C
Diodepulsedcurrent,t
p
limitedbyT
vjmax
Diode surge non repetitive forward current
T
C
=25°C,t
p
=10.0ms,sinehalfwave
PowerdissipationT
C
=25°C
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
ThermalResistance
Parameter
Characteristic
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
Symbol Conditions
Max.Value
Unit
M
Symbol
V
RRM
I
F
I
Fpuls
I
FSM
P
tot
T
vj
T
stg
Value
600
80.0
50.0
150.0
240.0
187.0
-40...+175
-55...+150
260
0.6
Unit
V
A
A
A
W
°C
°C
°C
Nm
R
th(j-c)
R
th(j-a)
0.80
40
K/W
K/W
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
StaticCharacteristic
Diode forward voltage
V
F
I
F
=50.0A
T
vj
=25°C
T
vj
=175°C
V
R
=600V
T
vj
=25°C
T
vj
=175°C
-
-
-
-
1.65
1.60
-
-
2.00
-
V
Symbol Conditions
Value
min.
typ.
max.
Unit
Reverse leakage current
I
R
40.0 µA
1650.0
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
min.
typ.
max.
Unit
Symbol Conditions
Value
min.
typ.
max.
Unit
4
Rev.2.2,2014-02-24
IDW50E60
EmitterControlledDiodeseries
DiodeCharacteristic,atT
vj
=25°C
Diode reverse recovery time
Diode reverse recovery charge
Diode peak rate of fall of reverse
recoverycurrentduringt
b
t
rr
Q
rr
T
vj
=25°C,
V
R
=400V,
I
F
=50.0A,
di
F
/dt=1200A/µs
-
-
-
-
115
1.50
30.0
-470
-
-
-
-
ns
µC
A
A/µs
Diode peak reverse recovery current
I
rrm
di
rr
/dt
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
min.
typ.
max.
Unit
DiodeCharacteristic,atT
vj
=175°C
Diode reverse recovery time
Diode reverse recovery charge
Diode peak rate of fall of reverse
recoverycurrentduringt
b
t
rr
Q
rr
T
vj
=175°C,
V
R
=400V,
I
F
=50.0A,
di
F
/dt=1200A/µs
-
-
-
-
192
4.10
52.0
-650
-
-
-
-
ns
µC
A
A/µs
Diode peak reverse recovery current
I
rrm
di
rr
/dt
5
Rev.2.2,2014-02-24