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MBRTA60040R

产品描述Schottky Diodes & Rectifiers Schottky Rectifier - 40 V - 600 A - Three Tower(Isolation)
产品类别半导体    分立半导体   
文件大小388KB,共3页
制造商GeneSiC
官网地址http://www.genesicsemi.com/
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MBRTA60040R概述

Schottky Diodes & Rectifiers Schottky Rectifier - 40 V - 600 A - Three Tower(Isolation)

MBRTA60040R规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
GeneSiC
产品种类
Product Category
Schottky Diodes & Rectifiers
产品
Product
Schottky Diodes
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
Module
If - Forward Current600 A
Vrrm - Repetitive Reverse Voltage40 V
Vf - Forward Voltage0.75 V
Ifsm - Forward Surge Current4000 A
技术
Technology
Si
Ir - Reverse Current1 uA
最小工作温度
Minimum Operating Temperature
- 40 C
最大工作温度
Maximum Operating Temperature
+ 150 C
工作温度范围
Operating Temperature Range
- 40 C to + 150 C
工厂包装数量
Factory Pack Quantity
25

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MBRTA60020 thru MBRTA60040R
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 20 V to 40 V V
RRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Heavy Three Tower Package
V
RRM
= 20 V - 40 V
I
F(AV)
= 600 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
MBRTA60020(R) MBRTA60030(R) MBRTA60035(R) MBRTA60040(R) Unit
20
14
20
-55 to 150
-55 to 150
30
21
30
-55 to 150
-55 to 150
35
25
35
-55 to 150
-55 to 150
40
28
40
-55 to 150
-55 to 150
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current
(per pkg)
Peak forward surge current
(per leg)
Maximum instantaneous
forward voltage (per leg)
Reverse current at rated
DC blocking voltage (per
leg)
Symbol
I
F(AV)
I
FSM
V
F
I
R
Conditions
T
C
= 100 °C
t
p
= 8.3 ms, half sine
I
FM
= 300 A, T
j
= 25 °C
T
j
= 25 °C
T
j
= 100 °C
T
j
= 150 °C
MBRTA60020(R) MBRTA60030(R) MBRTA60035(R) MBRTA60040(R) Unit
600
4000
0.70
1
10
50
0.28
600
4000
0.70
1
10
50
0.28
600
4000
0.70
1
10
50
0.28
600
4000
0.70
1
10
50
0.28
A
A
V
mA
Thermal characteristics
Thermal resistance,
junction - case (per leg)
R
ΘJC
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1

MBRTA60040R相似产品对比

MBRTA60040R MBRTA60040 MBRTA60020 MBRTA60035R MBRTA60035 MBRTA60030 MBRTA60030R
描述 Schottky Diodes & Rectifiers Schottky Rectifier - 40 V - 600 A - Three Tower(Isolation) Schottky Diodes u0026 Rectifiers Schottky Rectifier - 40 V - 600 A - Three Tower(Isolation) Schottky Diodes u0026 Rectifiers Schottky Rectifier - 20 V - 600 A - Three Tower(Isolation) Schottky Diodes u0026 Rectifiers Schottky Rectifier - 35 V - 600 A - Three Tower(Isolation) Schottky Diodes & Rectifiers Schottky Rectifier - 35 V - 600 A - Three Tower(Isolation) DIODE SCHOTTKY 30V 300A 3TOWER DIODE SCHOTTKY 30V 300A 3TOWER
制造商
Manufacturer
GeneSiC GeneSiC GeneSiC GeneSiC GeneSiC - -
产品种类
Product Category
Schottky Diodes & Rectifiers Schottky Diodes & Rectifiers Schottky Diodes & Rectifiers Schottky Diodes & Rectifiers Schottky Diodes & Rectifiers - -
产品
Product
Schottky Diodes Schottky Diodes Schottky Diodes Schottky Diodes Schottky Diodes - -
安装风格
Mounting Style
SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT - -
封装 / 箱体
Package / Case
Module Module Module Module Module - -
If - Forward Current 600 A 600 A 600 A 600 A 600 A - -
Vrrm - Repetitive Reverse Voltage 40 V 40 V 20 V 35 V 35 V - -
Vf - Forward Voltage 0.75 V 0.75 V 0.7 V 0.75 V 0.75 V - -
Ifsm - Forward Surge Current 4000 A 4000 A 4000 A 4000 A 4000 A - -
技术
Technology
Si Si Si Si Si - -
Ir - Reverse Current 1 uA 1 uA 1 uA 1 uA 1 uA - -
最小工作温度
Minimum Operating Temperature
- 40 C - 40 C - 40 C - 40 C - 40 C - -
最大工作温度
Maximum Operating Temperature
+ 150 C + 150 C + 150 C + 150 C + 150 C - -
工作温度范围
Operating Temperature Range
- 40 C to + 150 C - 40 C to + 150 C - 40 C to + 150 C - 40 C to + 150 C - 40 C to + 150 C - -
工厂包装数量
Factory Pack Quantity
25 25 25 25 25 - -

 
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