DISCRETE SEMICONDUCTORS
DATA SHEET
PEMH4; PUMH4
NPN/NPN resistor-equipped
transistors; R1 = 10 kΩ, R2 = open
Product data sheet
Supersedes data of 2003 Oct 02
2004 Apr 14
NXP Semiconductors
Product data sheet
NPN/NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = open
FEATURES
•
Built-in bias resistors
•
Simplified circuit design
•
Reduction of component count
•
Reduced pick and place costs.
APPLICATIONS
•
Low current peripheral driver
•
Replacement of general purpose transistors in digital
applications
•
Control of IC inputs.
DESCRIPTION
NPN/NPN resistor-equipped transistors (see “Simplified
outline, symbol and pinning” for package details).
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
PHILIPS
PEMH4
PUMH4
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
SOT666
SOT363
−
SC-88
EIAJ
H4
H*4
MARKING CODE
(1)
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
O
TR1
TR2
R1
R2
PEMH4; PUMH4
PARAMETER
collector-emitter
voltage
output current (DC)
NPN
NPN
bias resistor
bias resistor
TYP.
−
−
−
−
10
open
MAX.
50
100
−
−
−
−
UNIT
V
mA
−
−
kΩ
−
NPN/PNP
COMPLEMENT
PEMD4
PUMD4
PNP/PNP
COMPLEMENT
PEMB4
PUMB4
PINNING
TYPE NUMBER
PEMH4
PUMH4
handbook, halfpage
6
SIMPLIFIED OUTLINE AND SYMBOL
PIN
5
4
6
5
4
DESCRIPTION
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
1
2
3
R1
TR1
R1
TR2
4
5
6
1
Top view
2
3
MAM453
1
2
3
2004 Apr 14
2
NXP Semiconductors
Product data sheet
NPN/NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = open
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PEMH4
PUMH4
−
−
DESCRIPTION
Plastic surface mounted package; 6 leads
Plastic surface mounted package; 6 leads
PEMH4; PUMH4
VERSION
SOT666
SOT363
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per transistor
V
CBO
V
CEO
V
EBO
I
O
I
CM
P
tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current (DC)
peak collector current
total power dissipation
SOT363
SOT666
T
stg
T
j
T
amb
Per device
P
tot
total power dissipation
SOT363
SOT666
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
T
amb
≤
25
°C
note 1
notes 1 and 2
−
−
300
300
mW
mW
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
note 1
notes 1 and 2
−
−
−65
−
−65
200
200
+150
150
+150
mW
mW
°C
°C
°C
open emitter
open base
open collector
−
−
−
−
−
50
50
5
100
100
V
V
V
mA
mA
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
2004 Apr 14
3
NXP Semiconductors
Product data sheet
NPN/NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = open
THERMAL CHARACTERISTICS
SYMBOL
Per transistor
R
th(j-a)
thermal resistance from junction to ambient
SOT363
SOT666
Per device
R
th(j-a)
thermal resistance from junction to ambient
SOT363
SOT666
Notes
T
amb
≤
25
°C
note 1
notes 1 and 2
T
amb
≤
25
°C
note 1
notes 1 and 2
PARAMETER
CONDITIONS
PEMH4; PUMH4
VALUE
UNIT
625
625
K/W
K/W
416
416
K/W
K/W
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
Per transistor
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
R1
C
c
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input resistor
collector capacitance
V
CB
= 10 V; I
E
= i
e
= 0; f = 1 MHz
V
CB
= 50 V; I
E
= 0
V
CE
= 30 V; I
B
= 0
V
CE
= 30 V; I
B
= 0; T
j
= 150
°C
V
EB
= 5 V; I
C
= 0
V
CE
= 5 V; I
C
= 1 mA
I
C
= 10 mA; I
B
= 0.5 mA
−
−
−
−
200
−
7
−
−
−
−
−
−
−
10
−
100
1
50
100
−
150
13
2.5
mV
kΩ
pF
nA
μA
μA
nA
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
2004 Apr 14
4
NXP Semiconductors
Product data sheet
NPN/NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = open
PACKAGE OUTLINE
Plastic surface-mounted package; 6 leads
PEMH4; PUMH4
SOT666
D
A
E
X
S
Y S
HE
6
5
4
pin 1 index
A
1
e1
e
2
bp
3
w
M
A
Lp
detail X
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
0.6
0.5
b
p
0.27
0.17
c
0.18
0.08
D
1.7
1.5
E
1.3
1.1
e
1.0
e
1
0.5
H
E
1.7
1.5
L
p
0.3
0.1
w
0.1
y
0.1
OUTLINE
VERSION
SOT666
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
2004 Apr 14
5
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