DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ649
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ649 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
ORDERING INFORMATION
PART NUMBER
2SJ649
PACKAGE
Isolated TO-220
FEATURES
•
Low on-state resistance:
R
DS(on)1
= 48 mΩ MAX. (V
GS
= –10 V, I
D
= –10 A)
R
DS(on)2
= 75 mΩ MAX. (V
GS
= –4.0 V, I
D
= –10 A)
•
Low input capacitance:
C
iss
= 1900 pF TYP. (V
DS
= –10 V, V
GS
= 0 V)
•
Built-in gate protection diode
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
–60
V
V
A
A
W
W
°C
°C
A
mJ
m
20
m
20
m
70
25
2.0
150
–55 to +150
–20
40
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= –30 V, R
G
= 25
Ω,
V
GS
= –20
¡
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16332EJ1V0DS00 (1st edition)
Date Published May 2003 NS CP(K)
Printed in Japan
2002
2SJ649
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Characteristics
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
Symbol
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
Test Condtions
V
DS
= –60 V, V
GS
= 0 V
V
GS
=
MIN.
TYP.
MAX.
Unit
–
10
µ
A
µ
A
V
S
m
20 V, V
DS
= 0 V
–1.5
10
–2.0
20
38
47
1900
350
140
10
10
73
17
m
10
–2.5
V
DS
= –10 V, I
D
= –1 mA
V
DS
= –10 V, I
D
= –10 A
V
GS
= –10 V, I
D
= –10 A
V
GS
= –4.0 V, I
D
= –10 A
V
DS
= –10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= –30 V, I
D
= –10 A
V
GS
= –10 V
R
G
= 0
Ω
Drain to Source On-state Resistance
48
75
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= –48 V
V
GS
= –10 V
I
D
= –20 A
I
F
= 20 A, V
GS
= 0 V
I
F
= 20 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
38
7
10
0.95
49
100
Note
Pulsed: PW
≤
350
µ
s, Duty Cycle
≤
2%
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG
V
GS
= –20
→
0 V
−
I
D
V
DD
BV
DSS
V
DS
V
GS
(−)
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
L
V
DD
PG.
D.U.T.
R
L
V
GS
(−)
V
GS
Wave Form
50
Ω
R
G
0
10%
V
GS
90%
V
DD
V
DS
(−)
90%
90%
10% 10%
I
AS
V
DS
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
=
−2
mA
50
Ω
R
L
V
DD
PG.
2
Data Sheet D16332EJ1V0DS
2SJ649
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
120
30
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
P
T
- Total Power Dissipation - W
100
25
80
20
60
15
40
10
20
5
0
0
25
50
75
100
125
150
175
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
- 100
I
D(pulse)
PW = 100
µs
I
D
- Drain Current - A
I
D(DC)
1 ms
- 10
R
DS(on)
Limited
(at V
GS
=
−10
V)
DC
-1
10 ms
Single pulse
T
C
= 25°C
- 0.1
- 0.1
-1
- 10
- 100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
r
th(t)
- Transient Thermal Resistance -
°C/W
R
th(ch-A)
= 62.5°C/W
10
R
th(ch-C)
= 5.0°C/W
1
0.1
Single pulse
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D16332EJ1V0DS
3
2SJ649
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
–80
FORWARD TRANSFER CHARACTERISTICS
–100
I
D
- Drain Current - A
–60
V
GS
= –10 V
I
D
- Drain Current - A
–10
–40
–4.5 V
–4.0 V
–1
T
A
=
−55˚C
25˚C
75˚C
125˚C
–20
Pulsed
0
0
–1
–2
–3
–4
–5
–0.1
V
DS
= –10 V
Pulsed
–2
–3
–4
–5
–0.01
–1
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
- Gate Cut-off Voltage - V
V
DS
= –10 V
I
D
= –1 mA
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
100
–4.0
–3.0
10
T
A
= 125˚C
75˚C
25˚C
−55˚C
–2.0
1
–1.0
0.1
V
DS
= –10 V
Pulsed
–10
–100
0
–50
0
50
100
150
0.01
–0.01
–0.1
–1
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
120
100
80
60
40
20
0
–0.1
V
GS
= –4.0 V
–4.5 V
–10 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
80
70
60
50
40
30
20
10
0
0
-2
-4
-6
-8
- 10 - 12 - 14 - 16 - 18 - 20
I
D
=
−10
A
Pulsed
Pulsed
–1
–10
–100
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
4
Data Sheet D16332EJ1V0DS
2SJ649
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
90
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
V
GS
= 0 V
f = 1 MHz
C
iss
1000
70
V
GS
=
−4.0
V
60
50
40
30
20
10
0
-75
Pulsed
−10
V
C
iss
, C
oss
, C
rss
- Capacitance - pF
80
C
oss
100
C
rss
10
–0.1
-50
-25
0
25
50
75
100 125 150 175
–1
–10
–100
V
DS
- Drain to Source Voltage - V
T
ch
- Channel Temperature - °C
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
DS
- Drain to Source Voltage – V
- 50
- 45
- 40
- 35
- 30
- 25
- 20
- 15
- 10
-5
0
0
5
10
15
20
25
30
35
40
V
DS
I
D
=
−20
A
Pulsed
-2
-4
V
DD
=
−48
V
−30
V
−12
V
V
GS
-8
- 10
100
t
d(off)
t
f
-6
10
t
r
t
d(on)
1
–0.1
–1
–10
–100
0
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–100
Pulsed
V
GS
= –10 V
–10
–4.0 V
–1
0V
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/
µ
s
V
GS
= 0 V
t
rr
- Reverse Recovery Time - ns
I
F
- Diode Forward Current - A
100
10
–0.1
–0.01
0
–0.5
–1.0
–1.5
1
0.1
1
10
100
V
F(S-D)
- Source to Drain Voltage - V
I
F
- Diode Forward Current - A
Data Sheet D16332EJ1V0DS
V
GS
- Gate to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
DD
= –30 V
V
GS
= –10 V
R
G
= 0
Ω
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
