®
LY62L25716
Rev. 2.6
256K X 16 BIT LOW POWER CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.0
Rev. 2.0
Rev. 2.1
Rev. 2.2
Rev. 2.3
Description
Initial Issue
Revised I
SB(max) :
0.5mA => 1.25mA
Adding 44-pin TSOP-II
Adding 48-ball BGA
Revised I
DR
Deleted L Spec.
Added SL Spec.
Revised Test Condition of I
CC
/I
SB1
/I
DR
Revised V
TERM
to V
T1
and V
T2
Added I
SB1
/I
DR
values when T
A
= 25
℃
and T
A
= 40
℃
Revised
FEATURES
&
ORDERING INFORMATION
Lead free and green package available
to
Green package
available
Added packing type in
ORDERING INFORMATION
Deleted T
SOLDER
in
ABSOLUTE MAXIMUN RATINGS
Revised
PACKAGE OUTLINE DIMENSION
in page 13
Revised
ORDERING INFORMATION
in page 14
Issue Date
Apr.19.2006
May.11.2006
Jul.5.2006
Dec.20.2006
Mar.3.2008
Rev. 2.4
Mar.30.2009
Rev. 2.5
Rev. 2.6
May.6.2010
Aug.25.2010
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
®
LY62L25716
Rev. 2.6
256K X 16 BIT LOW POWER CMOS SRAM
GENERAL DESCRIPTION
The LY62L25716 is a 4,194,304-bit low power
CMOS static random access memory organized as
262,144 words by 16 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The LY62L25716 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The LY62L25716 operates from a single power
supply of 2.7V ~ 3.6V and all inputs and outputs are
fully TTL compatible
FEATURES
Fast access time : 45/55/70ns
Low power consumption:
Operating current : 40/30/20mA (TYP.)
Standby current : 2μA (TYP.) LL-version
1μA (TYP.) SL-version
Single 2.7V ~ 3.6V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 1.5V (MIN.)
Green package available
Package : 48-pin 12mm x 20mm TSOP-I
44-pin 400mil TSOP-II
48-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
Product
Family
LY62L25716
LY62L25716(E)
LY62L25716(I)
Operating
Temperature
0 ~ 70℃
-20 ~ 80℃
-40 ~ 85℃
Vcc Range
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
Speed
45/55/70ns
45/55/70ns
45/55/70ns
Power Dissipation
Standby(I
SB1,
TYP.) Operating(Icc,TYP.)
2µA(LL)/1µA(SL)
40/30/20mA
2µA(LL)/1µA(SL)
40/30/20mA
2µA(LL)/1µA(SL)
40/30/20mA
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
®
LY62L25716
Rev. 2.6
256K X 16 BIT LOW POWER CMOS SRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
Chip Enable Input
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
Ground
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
A0 - A17
CE#, CE2
WE#
OE#
LB#
UB#
V
CC
DQ0 – DQ15 Data Inputs/Outputs
DECODER
256Kx16
MEMORY ARRAY
A0-A17
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
V
SS
I/O DATA
CIRCUIT
COLUMN I/O
CE#
CE2
WE#
OE#
LB#
UB#
CONTROL
CIRCUIT
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
®
LY62L25716
Rev. 2.6
256K X 16 BIT LOW POWER CMOS SRAM
PIN CONFIGURATION
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
CE2
NC
UB#
LB#
NC
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
NC
Vss
DQ15
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
Vcc
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
Vss
CE#
A0
LY62L25716
TSOP-I
A4
A3
A2
A1
A0
CE#
DQ0
DQ1
DQ2
DQ3
Vcc
Vss
DQ4
DQ5
DQ6
DQ7
WE#
A17
A16
A15
A14
A13
1
2
3
4
5
6
7
44
43
42
41
40
39
38
A5
A6
A7
OE#
UB#
LB#
DQ15
DQ14
DQ13
DQ12
Vss
Vcc
DQ11
DQ10
DQ9
DQ8
CE2
A8
A9
A10
A11
A12
1
2
3
4
TFBGA
5
6
A
B
C
D
E
F
G
H
LB# OE#
DQ8 UB#
A0
A3
A1
A4
A6
A7
A2
CE2
LY62L25716
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
CE# DQ0
DQ1 DQ2
DQ3 Vcc
DQ9 DQ10 A5
Vss DQ11 A17
Vcc DQ12 NC
DQ14 DQ13 A14
DQ15 NC
NC
A8
A12
A9
A16 DQ4 Vss
A15 DQ5 DQ6
A13 WE# DQ7
A10
A11
NC
TSOP II
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
®
LY62L25716
Rev. 2.6
256K X 16 BIT LOW POWER CMOS SRAM
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 4.6
-0.5 to V
CC
+0.5
0 to 70(C grade)
-20 to 80(E grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
CE#
H
X
X
L
L
L
L
L
L
L
L
CE2
X
L
X
H
H
H
H
H
H
H
H
OE#
X
X
X
H
H
L
L
L
X
X
X
WE#
X
X
X
H
H
H
H
H
L
L
L
LB#
X
X
H
L
X
L
H
L
L
H
L
UB#
X
X
H
X
L
H
L
L
H
L
L
I/O OPERATION
SUPPLY CURRENT
DQ0-DQ7 DQ8-DQ15
High – Z
High – Z
I
SB
,I
SB1
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
I
CC
,I
CC1
High – Z
High – Z
D
OUT
High – Z
I
CC
,I
CC1
D
OUT
High – Z
D
OUT
D
OUT
High – Z
D
IN
I
CC
,I
CC1
D
IN
High – Z
D
IN
D
IN
Write
Note:
H = V
IH
, L = V
IL
, X = Don't care.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
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