BUK7907-55ATE
TrenchPLUS standard level FET
Rev. 02 — 16 July 2002
M3D745
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on state resistance, and TrenchPLUS
diodes for Electrostatic Discharge (ESD) and temperature sensing.
Product availability:
BUK7907-55ATE in SOT263B.
2. Features
s
s
s
s
Typical on-state resistance 5.8 mΩ
Q101 compliant
ESD protection
Monolithically integrated temperature sensor for overload protection.
3. Applications
s
Automotive and power switching:
x
12 V and 24 V high power motor drives, e.g. Electrical Power Assisted
Steering (EPAS)
x
Protected drive for lamps.
4. Pinning information
Table 1:
Pin
1
2
3
4
5
mb
Pinning - SOT263B simplified outline and symbol
Description
gate (g)
mb
d
a
Simplified outline
Symbol
anode (a)
drain (d)
cathode (k)
source (s)
MBL317
g
mounting base;
connected to drain (d)
s
k
1
5
MBL263
SOT263B
Philips Semiconductors
BUK7907-55ATE
TrenchPLUS standard level FET
5. Quick reference data
Table 2:
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Conditions
T
j
= 25
°C
T
mb
= 25
°C;
V
GS
= 10 V
T
mb
= 25
°C
V
GS
= 10 V; I
D
= 50 A
T
j
= 25
°C
T
j
= 175
°C
V
F
S
F
temperature sense diode forward
voltage
temperature coefficient temperature
sense diode
T
j
= 25
°C;
I
F
= 250
µA
−55 °C
< T
j
< 175
°C;
I
F
= 250
µA
5.8
-
658
−1.54
7
14
668
−1.68
mΩ
mΩ
mV
mV/K
Typ
-
-
-
-
Max
55
140
272
175
Unit
V
A
W
°C
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
Symbol Parameter
9397 750 09876
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 — 16 July 2002
2 of 15
Philips Semiconductors
BUK7907-55ATE
TrenchPLUS standard level FET
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
DGS
V
GS
I
D
Parameter
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
T
mb
= 25
°C;
V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°C;
V
GS
= 10 V;
Figure 2
I
DM
P
tot
I
GS(CL)
drain current (peak value)
total power dissipation
gate-source clamp current
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs;
Figure 3
T
mb
= 25
°C;
Figure 1
continuous
t
p
= 5 ms;
δ
= 0.01
V
isol(FET-TSD)
FET to temperature sense diode
isolation voltage
T
stg
T
j
I
DR
I
DRM
E
DS(AL)S
storage temperature
junction temperature
reverse drain current
pulsed reverse drain current
non-repetitive avalanche energy
T
mb
= 25
°C
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs
unclamped inductive load; I
D
= 68 A;
V
DS
≤
55 V; V
GS
= 10 V; R
GS
= 50
Ω;
starting T
j
= 25
°C
human body model; C = 100 pF;
R = 1.5 kΩ
[1]
[2]
[1]
[2]
[2]
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
−55
−55
-
-
-
-
Max
55
55
±20
140
75
75
560
272
10
50
±100
+175
+175
140
75
560
460
Unit
V
V
V
A
A
A
A
W
mA
mA
V
°C
°C
A
A
A
mJ
Source-drain diode
Avalanche ruggedness
Electrostatic Discharge
V
esd
electrostatic discharge voltage; pins
1,3,5
6
kV
[1]
[2]
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
9397 750 09876
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 — 16 July 2002
3 of 15
Philips Semiconductors
BUK7907-55ATE
TrenchPLUS standard level FET
120
Pder
(%)
80
03na19
160
ID
(A)
120
03ni63
80
40
40
Capped at 75A due to package
0
0
50
100
150
200
Tmb
(°C)
0
0
50
100
150
200
Tmb (°C)
P
tot
P
der
=
----------------------
×
100%
P
°
tot
(
25 C
)
V
GS
≥
10 V
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Continuous drain current as a function of
mounting base temperature.
103
ID
(A)
03nf55
Limit RDSon = VDS/ID
tp = 10
µs
102
100
µs
Capped at 75 A due to package
1 ms
DC
10
10 ms
100 ms
1
1
10
VDS (V)
102
T
mb
= 25
°C;
I
DM
single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09876
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 — 16 July 2002
4 of 15
Philips Semiconductors
BUK7907-55ATE
TrenchPLUS standard level FET
7. Thermal characteristics
Table 4:
Symbol
R
th(j-a)
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to
ambient
thermal resistance from junction to
mounting base
Conditions
vertical in still air
Figure 4
Min
-
-
Typ
60
-
Max
-
0.55
Unit
K/W
K/W
7.1 Transient thermal impedance
1
Z
th(j-mb)
(K/W)
03ni29
δ
= 0.5
10-1
0.2
0.1
0.05
10-2
0.02
P
single shot
δ
=
tp
T
tp
T
t
10-3
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 09876
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 — 16 July 2002
5 of 15
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