VSMG3700
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm,
GaAlAs Double Hetero
FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength:
λ
p
= 850 nm
• High reliability
• High radiant power
948553
• High radiant intensity
• Angle of half intensity:
ϕ
= ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation band width: f
c
= 18 MHz
DESCRIPTION
VSMG3700 is an infrared, 850 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a PLCC-2 package for surface
mounting (SMD).
• Good spectral matching with Si photodetectors
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
• Infrared radiation source for operation with CMOS
cameras (illumination)
• High speed IR data transmission
PRODUCT SUMMARY
COMPONENT
VSMG3700
I
e
(mW/sr)
10
ϕ
(deg)
± 60
λ
p
(nm)
850
t
r
(ns)
20
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
VSMG3700-GS08
VSMG3700-GS18
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
REMARKS
MOQ: 7500 pcs, 1500 pcs/reel
MOQ: 8000 pcs, 8000 pcs/reel
PACKAGE FORM
PLCC-2
PLCC-2
Rev. 1.5, 24-Sep-13
Document Number: 81471
1
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMG3700
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
V
R
I
F
t
p
/T = 0.5, t
p
=
100 μs
t
p
= 100 μs
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
acc. figure 8, J-STD-020
J-STD-051, soldered on PCB
T
sd
R
thJA
120
100
80
60
R
thJA
= 250 K/W
40
20
0
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
200
180
VALUE
5
100
200
1.5
180
100
-40 to +85
-40 to +100
260
250
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
P
V
- Power Dissipation (mW)
160
140
120
100
80
60
40
20
0
0
10
20
30
40
50
60
70 80
90 100
R
thJA
= 250 K/W
I
F
- Forward Current (mA)
0
21340
10
20 30 40
50 60 70 80
90 100
21339
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of
φ
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
Cut-off frequency
Virtual source diameter
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
DC
= 70 mA, I
AC
= 30 mA pp
TEST CONDITION
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 1 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
SYMBOL
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
φ
e
TKφ
e
ϕ
λ
p
Δλ
TKλ
p
t
r
t
f
f
c
d
6
125
10
100
40
-0.35
± 60
850
40
0.25
20
13
18
0.44
22
MIN.
TYP.
1.5
2.3
-1.8
10
MAX.
1.8
UNIT
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
MHz
mm
Rev. 1.5, 24-Sep-13
Document Number: 81471
2
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMG3700
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Vishay Semiconductors
10 000
t
p
/T = 0.005
1.25
Φ
e, rel
- Relative Radiant Power
T
amb
< 60 °C
0.01
I
F
- Forward Current (mA)
1.0
1000
0.02
0.05
0.75
0.5
0.25
0
100
0.2
0.5
DC
10
0.1
1
0.01
95 9985
0.1
1
10
100
16972
800
850
900
t
p
- Pulse Length (ms)
λ-
Wavelength (nm)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 6 - Relative Radiant Power vs. Wavelength
1000
0°
10°
20°
30°
I
e, rel
- Relative Radiant Sensitivity
I
F
- Forward Current (mA)
100
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
t
p
= 100 µs
10
t
p
/T = 0.001
1
0
18873_1
1
2
3
4
94 8013
V
F
- Forward Voltage (V)
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
100
I
e
- Radiant Intensity (mW/sr)
10
t
p
= 1 µs
1
0.1
1
18874
10
100
1000
I
F
- Forward Pulse Current (mA)
Fig. 5 - Radiant Intensity vs. Forward Current
Rev. 1.5, 24-Sep-13
Document Number: 81471
3
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ϕ
- Angular Displacement
VSMG3700
www.vishay.com
PACKAGE DIMENSIONS
in millimeters
3.5
±0.2
1.75
±0.1
Vishay Semiconductors
0.8
Pin identification
0.9
2.8
±0.15
Technical drawings
according to DIN
specifications
C
A
2.2
Dimensions in mm
Ø2.4
3
+0.15
Drawing-No.: 6.541-5067.01-4
Issue: 6; 23.09.13
Mounting Pad Layout
1.2
Area covered
with
solderresist
2.6 (2.8)
1.6 (1.9)
4
Dimensions: Reflow and vapor phase (wave
soldering)
SOLDER PROFILE
300
250
255 °C
240 °C
217 °C
max. 260 °C
245 °C
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
Temperature (°C)
200
max. 30 s
150
max. 120 s
100
50
0
0
50
100
150
200
250
300
max. ramp up 3 °C/s max. ramp down 6 °C/s
max. 100 s
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: T
amb
< 30 °C, RH < 60 %
Moisture sensitivity level 3, acc. to J-STD-020.
DRYING
Time (s)
19841
Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
Rev. 1.5, 24-Sep-13
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Document Number: 81471
4
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
4
VSMG3700
www.vishay.com
TAPE AND REEL
PLCC-2 components are packed in antistatic blister tape
(DIN IEC (CO) 564) for automatic component insertion.
Cavities of blister tape are covered with adhesive tape.
120°
10.0
9.0
Vishay Semiconductors
4.5
3.5
2.5
1.5
13.00
12.75
63.5
60.5
Adhesive tape
Blister tape
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
180
178
14.4 max.
94 8665
Component cavity
94 8670
Fig. 12 - Dimensions of Reel-GS08
10.4
8.4
Fig. 9 - Blister Tape
120°
3.5
3.1
2.2
2.0
4.5
3.5
4.0
3.6
5.75
5.25
3.6
3.4
1.85
1.65
2.5
1.5
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
13.00
12.75
62.5
60.0
8.3
7.7
1.6
1.4
4.1
3.9
2.05
1.95
4.1
3.9
0.25
94 8668
321
329
14.4 max.
18857
Fig. 10 - Tape Dimensions in mm for PLCC-2
Fig. 13 - Dimensions of Reel-GS18
MISSING DEVICES
A maximum of 0.5 % of the total number of components per
reel may be missing, exclusively missing components at the
beginning and at the end of the reel. A maximum of three
consecutive components may be missing, provided this gap
is followed by six consecutive components.
De-reeling direction
COVER TAPE REMOVAL FORCE
The removal force lies between 0.1 N and 1.0 N at a removal
speed of 5 mm/s. In order to prevent components from
popping out of the blisters, the cover tape must be pulled off
at an angle of 180° with regard to the feed direction.
94 8158
> 160 mm
40 empty
compartments
min. 75 empty
compartments
Tape leader
Carrier leader
Carrier trailer
Fig. 11 - Beginning and End of Reel
The tape leader is at least 160 mm and is followed by a
carrier tape leader with at least 40 empty compartments.
The tape leader may include the carrier tape as long as the
cover tape is not connected to the carrier tape. The least
component is followed by a carrier tape trailer with a least
75 empty compartments and sealed with cover tape.
Rev. 1.5, 24-Sep-13
Document Number: 81471
5
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
