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NIF5003N

产品描述14 A, 42 V, 0.076 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
产品类别分立半导体    晶体管   
文件大小103KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
下载文档 详细参数 全文预览

NIF5003N概述

14 A, 42 V, 0.076 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA

14 A, 42 V, 0.076 ohm, N沟道, 硅, POWER, 场效应管, TO-261AA

NIF5003N规格参数

参数名称属性值
是否Rohs认证不符合
Reach Compliance Codeunknow
配置Single
FET 技术METAL-OXIDE SEMICONDUCTOR
工作模式ENHANCEMENT MODE
最高工作温度150 °C
极性/信道类型N-CHANNEL
最大功率耗散 (Abs)1.9 W
表面贴装YES
Base Number Matches1

文档预览

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NIF5003N
Preferred Device
Self-Protected FET
with Temperature and
Current Limit
42 V, 14 A, Single N−Channel, SOT−223
HDPlus™ devices are an advanced series of power MOSFETs which
utilize ON Semiconductors latest MOSFET technology process to
achieve the lowest possible on−resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain−to−Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate−to−Source Clamp.
Features
http://onsemi.com
V
DSS
(Clamped)
42 V
I
D
MAX
(Limited)
14 A
Drain
Overvoltage
Protection
M
PWR
R
DS(on)
TYP
53 mW @ 10 V
Gate
Input
R
G
Short Circuit Protection/Current Limit
Thermal Shutdown with Automatic Restart
I
DSS
Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
Pb−Free Packages are Available
ESD Protection
Temperature
Limit
Current
Limit
Current
Sense
Source
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage Internally Clamped
Gate−to−Source Voltage
Drain Current
Continuous
Total Power Dissipation
@ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Single Pulse Drain−to−Source Avalanche Energy
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
I
L
= 7.0 Apk, L = 9.5 mH, R
G
= 25
W)
Operating and Storage Temperature Range
(Note 3)
Symbol
V
DSS
V
GS
I
D
P
D
Value
42
"14
Unit
Vdc
Vdc
1
2
3
4
SOT−223
CASE 318E
STYLE 3
Internally Limited
1.25
1.9
12
100
65
233
W
MARKING DIAGRAM
1
4
2
DRAIN
3
AYW
5003N
G
G
DRAIN
R
qJC
R
qJA
R
qJA
E
AS
°C/W
GATE
mJ
SOURCE
A
= Assembly Location
Y
= Year
W
= Work Week
5003N = Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
T
J
, T
stg
−55
to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings
are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended
Operating Conditions may affect device reliability.
1. Surface mounted onto minimum pad size (0.412″ square) FR4 PCB, 1 oz cu.
2. Mounted onto 1″ square pad size (1.127″ square) FR4 PCB, 1 oz cu.
3. Normal pre−fault operating range. See thermal limit range conditions.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2008
September, 2008
Rev. 5
1
Publication Order Number:
NIF5003N/D

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