NID5004N
Self−Protected FET
with Temperature and
Current Limit
40 V, 6.5 A, Single N−Channel, DPAK
Self–protected FETs are a series of power MOSFETs which utilize
ON Semiconductor HDPlust technology. The self–protected
MOSFET incorporates protection features such as integrated thermal
and current limits. The self−protected MOSFETs include an integrated
Drain−to−Gate Clamp that provides overvoltage protection from
transients and avalanche. The device is protected from Electrostatic
Discharge (ESD) by utilizing an integrated Gate−to−Source Clamp.
Features
V
DSS
(Clamped)
40 V
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I
D
Typ
(Limited)
6.5 A
Drain
Overvoltage
Protection
R
DS(on)
Typ
110 mW @ 10 V
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Short Circuit Protection
In Rush Current Limit
Thermal Shutdown with Automatic Restart
Avalanche Rated
Overvoltage Protection
ESD Protection (4 kV HBM)
Controlled Slew Rate for Low Noise Switching
AEC Q101 Qualified
This is a Pb−Free Device
Gate
Input
R
G
ESD Protection
Temperature
Limit
Current
Limit
Current
Sense
Source
Applications
MARKING
DIAGRAM
DPAK
CASE 369C
STYLE 2
D5004N = Device Code
Y
= Year
WW
= Work Week
G
= Pb−Free Device
1
2
3
YYW
D5
004NG
Solenoid Driver
Relay Driver
Small Motors
Lighting
Relay Replacement
Load Switching
1 = Gate
2 = Drain
3 = Source
ORDERING INFORMATION
Device
NID5004NT4G
Package
DPAK
(Pb−Free)
Shipping
†
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2006
April, 2006
−
Rev. 1
1
Publication Order Number:
NID5004N/D
NID5004N
MOSFET MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage Internally Clamped
Gate−to−Source Voltage
Drain Current
Total Power Dissipation
@ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Single Pulse Drain−to−Source Avalanche Energy
(V
DD
= 30 Vdc, V
GS
= 5.0 Vdc,
I
L
= 1.8 Apk, L = 160 mH, R
G
= 25
W)
(Note 3)
Operating and Storage Temperature Range (Note 4)
Continuous
Symbol
V
DSS
V
GS
I
D
P
D
1.3
2.5
3.0
95
50
273
Value
44
"14
Internally Limited
W
Unit
Vdc
Vdc
R
qJC
R
qJA
R
qJA
E
AS
°C/W
mJ
T
J
, T
stg
−55
to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface mounted onto minimum pad size (100 sq/mm) FR4 PCB, 1 oz cu.
2. Mounted onto 1″ square pad size (700 sq/mm) FR4 PCB, 1 oz cu.
3. Not subject to Production Test
4. Normal pre−fault operating range. See thermal limit range conditions.
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2
NID5004N
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
(V
GS
= 0 V, I
D
= 2 mA)
Zero Gate Voltage Drain Current
(V
DS
= 32 V, V
GS
= 0 V)
Gate Input Current
(V
GS
= 5.0 V, V
DS
= 0 V)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 150
mA)
Threshold Temperature Coefficient
Static Drain−to−Source On−Resistance (Note 5)
(V
GS
= 10 V, I
D
= 2.0 A, T
J
@ 25°C)
Static Drain−to−Source On−Resistance (Note 5)
(V
GS
= 5.0 V, I
D
= 2.0 A, T
J
@ 25°C)
(V
GS
= 5.0 V, I
D
= 2.0 A, T
J
@ 150°C)
Source−Drain Forward On Voltage
(I
S
= 7.0 A, V
GS
= 0 V)
SWITCHING CHARACTERISTICS (Note 6)
Turn−on Delay Time
Turn−on Rise Time
Turn−off Delay Time
Turn−off Fall Time
Slew Rate ON
Slew Rate OFF
R
L
= 6.6
W,
V
in
= 0 to 10 V,
V
DD
= 13.8 V, I
D
= 2.0 A, 10% V
in
to 10% I
D
R
L
= 6.6
W,
V
in
= 0 to 10 V,
V
DD
= 13.8 V, I
D
= 2.0 A, 10% I
D
to 90% I
D
R
L
= 6.6
W,
V
in
= 0 to 10 V,
V
DD
= 13.8 V, I
D
= 2.0 A, 90% V
in
to 90% I
D
R
L
= 6.6
W,
V
in
= 0 to 10 V,
V
DD
= 13.8 V, I
D
= 2.0 A, 90% I
D
to 10% I
D
R
L
= 6.6
W,
V
in
= 0 to 10 V,
V
DD
= 13.8 V, I
D
= 2.0 A, 70% to 50% V
DD
R
L
= 6.6
W,
V
in
= 0 to 10 V,
V
DD
= 13.8 V, I
D
= 2.0 A, 50% to 70% V
DD
td
(on)
t
rise
td
(off)
t
fall
dV
DS
/dT
on
dV
DS
/dT
off
−
−
−
−
−
−
97
282
930
690
64
28
115
300
1020
750
−
−
ns
ns
ns
ns
V/ms
V/ms
V
GS(th)
1.0
−
−
−
−
−
1.85
5.0
110
130
240
0.9
2.2
−
130
150
270
1.1
V
−mV/°C
mW
mW
V
(BR)DSS
I
DSS
I
GSS
36
−
−
40
27
45
44
100
200
V
mA
mA
Symbol
Min
Typ
Max
Unit
R
DS(on)
R
DS(on)
V
SD
V
SELF PROTECTION CHARACTERISTICS
(T
J
= 25°C unless otherwise noted) (Note 7)
Current Limit
V
DS
= 10 V, V
GS
= 5.0 V, T
J
= 25°C (Note 8)
V
DS
= 10 V, V
GS
= 5.0 V, T
J
= 100°C (Note 6, 8)
V
DS
= 10 V, V
GS
= 10 V, T
J
= 25°C (Note 6, 8)
V
GS
= 5.0 V (Note 6)
V
GS
= 5.0 V
V
GS
= 10 V (Note 6)
V
GS
= 10 V
V
DS
= 0 V, V
GS
= 5.0 V, T
J
= T
J
> T
(fault)
(Note 6)
V
DS
= 0 V, V
GS
= 10 V, T
J
= T
J
> T
(fault)
(Note 6)
I
LIM
4.0
4.0
−
150
−
150
−
5.5
12
6.5
5.5
7.9
180
10
180
20
5.2
11
11
11
−
200
−
200
−
−
A
Temperature Limit (Turn−off)
Thermal Hysteresis
Temperature Limit (Turn−off)
Thermal Hysteresis
Input Current during
Thermal Fault
T
LIM(off)
DT
LIM(on)
T
LIM(off)
DT
LIM(on)
I
g(fault)
°C
°C
°C
°C
mA
ESD ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Electrostatic Discharge Capability
Human Body Model (HBM)
Machine Model (MM) (Note 6)
5.
6.
7.
8.
Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
Not subject to Production Test
Fault conditions are viewed as beyond the normal operating range of the part.
Current limit measured at 380
ms
after gate pulse.
ESD
4000
400
−
−
−
−
V
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3
NID5004N
TYPICAL PERFORMANCE CURVES
12
I
D,
DRAIN CURRENT (AMPS)
10
8
6
4
2
0
0
5.0
10
15
20
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4.0 V
3.5 V
V
GS
= 3.0 V
5.0 V
10 V
T
J
= 25°C
I
D,
DRAIN CURRENT (AMPS)
6
5
T
J
= 25°C
4
3
2
1
0
T
J
= 100°C
T
J
=
−55°C
0
2
3
4
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
1
5
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.15
0.14
0.13
0.12
0.11
0.10
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.15
Figure 2. Transfer Characteristics
I
D
= 2 A
T
J
= 25°C
T
J
= 25°C
0.14
0.13
0.12
0.11
0.10
2.0 2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8 4.0
I
D,
DRAIN CURRENT (AMPS)
V
GS
= 5 V
V
GS
= 10 V
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.6
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (W)
1.4
1.2
1.0
0.8
0.6
0.4
−55
I
D
= 3.75 A
V
GS
= 10 V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1E−03
Figure 4. On−Resistance vs. Drain Current
T
J
= 100°C
8E−04
6E−04
4E−04
2E−04
−35
−15
5
25
45
65
85
0E+00
0
5.0
10
15
20
25
30
35
40
45
T
J
, JUNCTION TEMPERATURE (°C)
I
DSS
, LEAKAGE (A)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
NID5004N
zl
TYPICAL PERFORMANCE CURVES
12000
V
DS
= 0 V
T
A
= 200°C
8
I
S
, SOURCE CURRENT (AMPS)
7
6
V
GS
= 0 V
T
J
= 25°C
10000
8000
I
GSS
(mA)
6000
4000
2000
0
5
4
3
2
1
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
1.0
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Diode Forward Voltage vs. Current
Figure 8. Input Current vs. Gate Voltage
12
DRAIN CURRENT (AMPS)
10
8
6
4
2
0
0E+0
Current
Limit
Temperature
Limit
V
GS
= 10 V
V
GS
= 5 V
1E−3
2E−3
3E−3
4E−3
5E−3
6E−3
7E−3
TIME (seconds)
Figure 9. Short Circuit Response*
*(Actual thermal cycling response in short circuit dependent on device
power level, thermal mounting, and ambient temperature conditions)
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5
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