BF1206F
Dual N-channel dual gate MOSFET
Rev. 01 — 30 January 2006
Product data sheet
1. Product profile
1.1 General description
The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared
source and gate2 leads.
The source and substrate are interconnected. Internal bias circuits enable Direct Current
(DC) stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The transistor is encapsulated in a SOT666 micro-miniature plastic
package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s
s
s
s
s
Two low noise gain controlled amplifiers in a single package
Superior cross-modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance ratio
Suited for 3 volt applications
1.3 Applications
s
Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High
Frequency (UHF) applications with 3 V supply voltage, such as digital and analog
television tuners
Philips Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
1.4 Quick reference data
Table 1:
Quick reference data
Per MOSFET unless otherwise specified.
Symbol Parameter
V
DS
I
D
|y
fs
|
drain-source voltage (DC)
drain current (DC)
forward transfer admittance
I
D
= 4 mA
amplifier A
amplifier B
C
iss(G1)
input capacitance at gate1
I
D
= 4 mA; f = 100 MHz
amplifier A
amplifier B
NF
noise figure
I
D
= 4 mA
amplifier A; f = 400 MHz
amplifier B; f = 800 MHz
Xmod
cross modulation
input level for k = 1 % at
40 dB AGC
amplifier A
amplifier B
92
93
97
98
-
-
dBµV
dBµV
-
-
1.0
1.0
1.6
1.6
dB
dB
-
-
2.4
1.7
2.9
2.2
pF
pF
17
17
22
22
32
32
mS
mS
Conditions
Min
-
-
Typ
-
-
Max Unit
6
30
V
mA
2. Pinning information
Table 2:
Pin
1
2
3
4
5
6
Discrete pinning
Description
gate1 (AMP A)
source
gate1 (AMP B)
drain (AMP B)
drain (AMP A)
gate2
1
2
3
G1B
6
5
4
G1A
AMP A
G2
Simplified outline
Symbol
S
AMP B
DA
DB
sym111
3. Ordering information
Table 3:
Ordering information
Package
Name
BF1206F
-
Description
plastic surface mounted package; 6 leads
Version
SOT666
Type number
BF1206F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2006
2 of 20
Philips Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
4. Marking
Table 4:
BF1206F
Marking
Marking code
2N
Type number
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
I
D
I
G1
I
G2
P
tot
T
stg
T
j
[1]
Parameter
drain-source voltage (DC)
drain current (DC)
gate1 current
gate2 current
total power dissipation
storage temperature
junction temperature
Conditions
Min
-
-
-
-
Max
6
30
±10
±10
180
+150
150
Unit
V
mA
mA
mA
mW
°C
°C
Per MOSFET
T
sp
≤
107
°C
[1]
-
−65
-
T
sp
is the temperature at the solder point of the source lead.
250
P
tot
(mW)
200
001aac193
150
100
50
0
0
50
100
150
T
sp
(˚C)
200
Fig 1. Power derating curve
6. Thermal characteristics
Table 6:
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Conditions
Typ
240
Unit
K/W
BF1206F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2006
3 of 20
Philips Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
7. Static characteristics
Table 7:
Static characteristics
T
j
= 25
°
C.
Symbol
V
(BR)DSS
Parameter
drain-source breakdown voltage
Conditions
V
G1-S
= V
G2-S
= 0 V; I
D
= 10
µA
amplifier A
amplifier B
V
(BR)G1-SS
V
(BR)G2-SS
V
F(S-G1)
V
F(S-G2)
V
G1-S(th)
V
G2-S(th)
I
DSX
gate1-source breakdown voltage
gate2-source breakdown voltage
forward source-gate1 voltage
forward source-gate2 voltage
gate1-source threshold voltage
gate2-source threshold voltage
drain cut-off current
V
GS
= V
DS
= 0 V; I
G1-S
= 10 mA
V
GS
= V
DS
= 0 V; I
G2-S
= 10 mA
V
G2-S
= V
DS
= 0 V; I
S-G1
= 10 mA
V
G1-S
= V
DS
= 0 V; I
S-G2
= 10 mA
V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 100
µA
V
DS
= 5 V; V
G1-S
= 5 V; I
D
= 100
µA
V
G2-S
= 2.5 V; V
DS
= 2.8 V
amplifier A; R
G1
= 270 kΩ
amplifier B; R
G1
= 220 kΩ
I
G1-S
gate1 cut-off current
V
G1-S
= 5 V; V
G2-S
= V
DS
= 0 V
amplifier A
amplifier B
I
G2-S
[1]
[1]
Min
Typ
Max Unit
Per MOSFET; unless otherwise specified
6
6
6
6
0.5
0.5
0.3
-
-
-
-
-
-
-
-
-
10
10
1.5
1.5
1.0
1.0
6.5
6.5
50
50
20
V
V
V
V
V
V
V
V
mA
mA
nA
nA
nA
0.35 -
3
3
-
-
-
-
-
-
-
-
gate2 cut-off current
V
G2-S
= 5 V; V
G1-S
= V
DS
= 0 V;
R
G1
connects gate 1 to V
GG
= 2.8 V.
8. Dynamic characteristics
8.1 Dynamic characteristics for amplifier A
Table 8:
Dynamic characteristics for amplifier A
Common source; T
amb
= 25
°
C; V
G2-S
= 2.5 V; V
DS
= 2.8 V; I
D
= 4 mA.
Symbol
|y
fs
|
C
iss(G1)
C
iss(G2)
C
oss
C
rss
G
tr
Parameter
forward transfer admittance
input capacitance at gate1
input capacitance at gate2
output capacitance
reverse transfer capacitance
transducer power gain
Conditions
T
j
= 25
°C
f = 100 MHz
f = 100 MHz
f = 100 MHz
f = 100 MHz
B
S
= B
S(opt)
; B
L
= B
L(opt)
f = 200 MHz; G
S
= 2 mS; G
L
= 0.5 mS
f = 400 MHz; G
S
= 2 mS; G
L
= 1 mS
f = 800 MHz; G
S
= 3.3 mS; G
L
= 1 mS
NF
noise figure
f = 11 MHz; G
S
= 20 mS; B
S
= 0
f = 400 MHz; Y
S
= Y
S(opt)
f = 800 MHz; Y
S
= Y
S(opt)
BF1206F_1
Min
17
[1]
[1]
[1]
[1]
[1]
Typ
22
2.4
3.2
1.1
15
31
28
23
3.5
1.0
1.1
Max
32
2.9
-
-
30
-
-
-
-
1.6
1.7
Unit
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
-
-
-
-
-
-
-
-
-
-
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2006
4 of 20
Philips Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
Table 8:
Dynamic characteristics for amplifier A
…continued
Common source; T
amb
= 25
°
C; V
G2-S
= 2.5 V; V
DS
= 2.8 V; I
D
= 4 mA.
Symbol
Xmod
Parameter
cross modulation
Conditions
input level for k = 1 %; f
w
= 50 MHz;
f
unw
= 60 MHz
at 0 dB AGC
at 10 dB AGC
at 40 dB AGC
[1]
[2]
Calculated from measured S-parameters.
Measured in
Figure 32
test circuit.
[2]
Min
Typ
Max
Unit
88
-
92
-
85
97
-
-
-
dBµV
dBµV
dBµV
8.1.1 Graphs for amplifier A
001aad896
(1)
(2)
(3)
15
I
D
(mA)
10
16
I
D
(mA)
12
001aad897
(1)
(2)
(3)
8
(4)
5
(4)
(5)
4
(6)
(7)
0
0
0.4
0.8
1.2
1.6
2.0
V
G1−S
(V)
0
0
1
2
3
V
DS
(V)
4
(1) V
G2-S
= 2.5 V.
(2) V
G2-S
= 2.0 V.
(3) V
G2-S
= 1.5 V.
(4) V
G2-S
= 1.0 V.
V
DS(A)
= 2.8 V; T
j
= 25
°C.
(1) V
G1-S(A)
= 1.4 V.
(2) V
G1-S(A)
= 1.3 V.
(3) V
G1-S(A)
= 1.2 V.
(4) V
G1-S(A)
= 1.0 V.
(5) V
G1-S(A)
= 0.9 V.
(6) V
G1-S(A)
= 0.85 V.
(7) V
G1-S(A)
= 0.8 V.
V
G2-S
= 2.5 V; T
j
= 25
°C.
Fig 2. Amplifier A: transfer characteristics; typical
values
Fig 3. Amplifier A: output characteristics; typical
values
BF1206F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2006
5 of 20
嵌入式系统
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