Smart Lowside Power Switch
For Industrial Applications
HITFET
ISP 75N
Data Sheet V 1.4
Features
•
•
•
•
•
•
•
•
Lead free
Logic Level Input
Input protection (ESD)
Thermal shutdown with auto restart
Overload protection
Short circuit protection
Overvoltage protection
Current limitation
Application
• All kinds of resistive, inductive and capacitive loads in industrial applications
•
µC
compatible power switch for 12 V and 24 V DC applications and for 42 Volt
Powernet
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart Power Technology, protected by embedded
protection functions.
Type
HITFET
ISP 75N
Ordering Code
on request
Package
PG-SOT223-4
Product Summary
Parameter
Continuous drain source voltage
On-state resistance
Current limitation
Nominal load current
Clamping energy
Symbol
Value
60
550
1
0.7
550
Unit
V
mΩ
A
A
mJ
V
DS
R
DS(ON)
I
D(lim)
I
D(Nom)
E
AS
Data Sheet V 1.4
1
2008-04-14
HITFET
ISP 75N
V
bb
ISP75N
Logic
Over voltage
Protection
M
OUTPUT
Stage
DRAIN
IN
dV/dt
limitation
ESD
Over
temperature
Protection
Short circuit
Protection
Current
Limitation
SOURCE
Figure 1
Block Diagram
SOURCE
1
2
3
IN
DRAIN
SOURCE
Figure 2
Pin Configuration
Pin Definitions and Functions
Pin No.
1
2
3 + TAB
Symbol
IN
DRAIN
SOURCE
Function
Input;
activates output and supplies internal logic
Output to the load
Ground;
pin3 and TAB are internally connected
Data Sheet V 1.4
2
TAB
2008-04-14
HITFET
ISP 75N
Circuit Description
The ISP 75N is a monolithic power switch in Smart Power Technology (SPT) with a logic
level input, an open drain DMOS output stage and integrated protection functions. It is
designed for all kind of resistive and inductive loads (relays, solenoid) in industrial
applications.
Protection Functions
Note: The device provides embedded protection functions. Integrated protection
functions are designed to prevent IC destruction under fault conditions described
in the data sheet. Fault conditions are considered as “outside” normal operation.
•
Over voltage protection:
An internal clamp limits the output voltage at
V
DS(AZ)
(min.
60V) when inductive loads are switched off.
•
Current limitation:
By means of an internal current measurement the drain current is
limited at
I
D(lim)
(1.4 - 1.5 A typ.). If the current limitation is active the device operates
in the linear region, so power dissipation may exceed the capability of the heatsink.
This operation leads to an increasing junction temperature until the over temperature
threshold is reached.
•
Over temperature and short circuit protection:
This protection is based on sensing
the chip temperature. The location of the sensor ensures a fast and accurate junction
temperature detection. Over temperature shutdown occurs at minimum 150
°C.
A
hysteresis of typ. 10 K enables an automatic restart by cooling.
The device is ESD protected according Human Body Model (4 kV) and load dump
protected (see Maximum Ratings).
Data Sheet V 1.4
3
2008-04-14
HITFET
ISP 75N
Absolute Maximum Ratings
T
j
= 25
°C,
unless otherwise specified
Parameter
Continuous drain source voltage
1)
Drain source voltage for
short circuit protection
Continuous input voltage
Peak input voltage
Continuous Input Current
-0.2V
≤
V
IN
≤
10V
V
IN
<-0.2V or
V
IN
>10V
Junction Temperature
Operating temperature range
Storage temperature range
Symbol
Values
60
36
Unit Remarks
V
V
–
–
–
–
V
DS
V
DS
V
IN
V
IN
I
IN
-0.2 … +10 V
-0.2 … +20 V
no limit
|
I
IN
|≤
2mA
150
°C
-30 … +85
-40 … +105
1.8
550
W
mJ
V
80
47
mA –
T
j
T
a
T
stg
Power dissipation (DC)
P
tot
Unclamped single pulse inductive energy
E
AS
Load dump protection
2)
IN = low or high (8 V);
R
L
= 50
Ω
IN = high (8 V);
R
L
= 22
Ω
–
–
V
LoadDump
I
D(ISO)
= 0.7 A;
V
bb
=32V
V
LoadDump
=
V
P
+
V
S
;
V
P
= 13.5 V
R
I3)
= 2
Ω;
t
d
= 400 ms;
–
Electrostatic discharge
voltage (Human
Body Model)
according to MIL STD 883D, method
3015.7 and EOS/ESD assn. standard
S5.1 - 1993
JEDEC humidity category J-STD-20-C
IEC climatic category, DIN IEC 68-1
Thermal Resistance
Junction soldering point
Junction - ambient
4)
1)
2)
3)
V
ESD
4000
V
–
–
MSL3/260
40/150/56
–
–
–
–
R
thJS
R
thJA
≤
10
≤
70
K/W –
K/W –
See also
Figure 7
and
Figure 10.
V
LoadDump
is setup without DUT connected to the generator per ISO 7637-1 and DIN 40 839. See also
page 7.
R
I
= internal resistance of the load dump test pulse generator LD200.
Data Sheet V 1.4
4
2008-04-14
HITFET
ISP 75N
4)
Device on epoxy pcb 40 mm
×
40 mm
×
1.5 mm with 6 cm
2
copper area for pin 4 connection.
Electrical Characteristics
T
j
= 25
°C,
unless otherwise specified
Parameter
Sym-
bol
Limit Values
min. typ.
max.
Unit Test Conditions
Static Characteristics
Drain source clamp voltage
Off state drain current
V
DS(AZ)
60
I
DSS
–
–
–
75
5
V
µA
Input threshold voltage
V
IN(th)
1
1.8
2.5
V
µA
Input current:
normal operation,
I
D
<
I
D(lim)
:
I
IN(1)
current limitation mode,
I
D
=
I
D(lim)
:
I
IN(2)
After thermal shutdown,
I
D
= 0 A:
I
IN(3)
On-state resistance
I
D
= 10 mA,
T
j
= -40 … +150
°C
V
IN
= 0 V,
V
DS
= 32 V,
T
j
= -40 … +150
°C
I
D
= 10 mA
V
IN
= 5 V
–
100 200
–
250 400
1000 1500 2000
–
–
490
850
430
750
–
675
1350
550
1000
–
mΩ
I
D
= 0.7 A,
V
IN
= 5 V
mΩ
I
D
= 0.7 A,
V
IN
= 10 V
A
T
j
= 25
°C
T
j
= 150
°C
On-state resistance
R
DS(on)
T
j
= 25
°C
T
j
= 150
°C
Nominal load current
R
DS(on)
–
–
I
D(Nom)
0.7
Current limit
I
D(lim)
1
1.5
1.9
A
V
BB
= 12 V,
V
DS
= 0.5 V,
T
S
= 85
°C,
T
j
< 150
°C
V
IN
= 10 V,
V
DS
= 12 V
Dynamic Characteristics
1)
Turn-on time
V
IN
to 90%
I
D
:
t
on
–
10
20
µs
R
L
= 22
Ω,
V
IN
= 0 to 10 V,
V
BB
= 12 V
Data Sheet V 1.4
5
2008-04-14
MicroPython开源版块
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
