Low Skew, 1-to-4 LVCMOS/LVTTL
Fanout Buffer
Data Sheet
8304I
G
ENERAL
D
ESCRIPTION
The 8304I is a low skew, 1-to-4 Fanout Buffer. The 8304I is charac-
terized at full 3.3V for input V
DD
, and mixed 3.3V and 2.5V for output
operating supply modes (V
DDO
). Guaranteed output and part-to-part
skew characteristics make the 8304I ideal for those clock distribution
applications demanding well defined performance and repeatability.
F
EATURES
•
Four LVCMOS / LVTTL outputs
•
LVCMOS clock input
•
CLK can accept the following input levels: LVCMOS, LVTTL
•
Maximum output frequency: 166MHz
•
Output skew: 60ps (maximum)
•
Part-to-part skew: 650ps (maximum)
•
Small 8 lead SOIC package saves board space
•
3.3V input, outputs may be either 3.3V or 2.5V supply modes
•
-40°C to 85°C ambient operating temperature
•
Available in lead-free (RoHS 6) compliant package
B
LOCK
D
IAGRAM
Q0
Q1
CLK
Pulldown
Q2
P
IN
A
SSIGNMENT
V
DDO
V
DD
CLK
GND
1
2
3
4
8
7
6
5
Q3
Q2
Q1
Q0
8304I
8-Lead SOIC
3.8mm x 4.8mm, x 1.47mm package body
M Package
Top View
Q3
©2015 Integrated Device Technology, Inc
1
December 10, 2015
8304I Data Sheet
T
ABLE
1. P
IN
D
ESCRIPTIONS
Number
1
2
3
4
5
6
7
8
Name
V
DDO
V
DD
CLK
GND
Q0
Q1
Q2
Q3
Power
Power
Input
Power
Output
Output
Output
Output
Pulldown
Type
Description
Output supply pin. Connect to 3.3V or 2.5V.
Positive supply pin. Connect to 3.3V.
LVCMOS / LVTTL clock input.
Power supply ground. Connect to ground.
Single clock output. LVCMOS / LVTTL interface levels.
Single clock output. LVCMOS / LVTTL interface levels.
Single clock output. LVCMOS / LVTTL interface levels.
Single clock output. LVCMOS / LVTTL interface levels.
NOTE:
Pulldown
refer to internal input resistors. See Table 2, Pin Characteristics, for typical values.
T
ABLE
2. P
IN
C
HARACTERISTICS
Symbol
C
IN
C
PD
R
PULLDOWN
R
OUT
Parameter
Input Capacitance
Power Dissipation Capacitance
(per output)
Input Pulldown Resistor
Output Impedance
V ,V
DD
DDO
Test Conditions
Minimum
Typical
Maximum
4
Units
pF
pF
kΩ
Ω
= 3.465V
51
7
15
©2015 Integrated Device Technology, Inc
2
December 10, 2015
8304I Data Sheet
A
BSOLUTE
M
AXIMUM
R
ATINGS
Supply Voltage, V
DD
Inputs, V
I
Outputs, V
O
Package Thermal Impedance,
θ
JA
Storage Temperature, T
STG
4.6V
-0.5V to V
DD
+ 0.5 V
-0.5V to V
DDO
+ 0.5V
112.7°C/W (0 lfpm)
-65°C to 150°C
N OT E : S t r e s s e s b eyo n d t h o s e l i s t e d u n d e r A b s o l u t e
Maximum Ratings may cause permanent damage to the
device. These ratings are stress specifications only. Functional
operation of product at these conditions or any conditions beyond
those listed in the
DC Characteristics
or
AC Characteristics
is not
implied. Exposure to absolute maximum rating conditions for ex-
tended periods may affect product reliability.
T
ABLE
3A. P
OWER
S
UPPLY
DC C
HARACTERISTICS
,
V
DD
= V
DDO
= 3.3V±5%, T
A
= -40°C
TO
85°C
Symbol
V
DD
V
DDO
I
DD
I
DDO
Parameter
Power Supply Voltage
Output Power Supply Voltage
Power Supply Current
Output Supply Current
Test Conditions
Minimum
3.135
3.135
Typical
3.3
3.3
Maximum
3.465
3.465
18
11
Units
V
V
mA
mA
T
ABLE
3B. P
OWER
S
UPPLY
DC C
HARACTERISTICS
,
V
DD
= 3.3V±5%, V
DDO
= 2.5V±5%, T
A
= -40°C
TO
85°C
Symbol
V
DD
V
DDO
I
DD
I
DDO
Parameter
Positive Supply Voltage
Output Supply Voltage
Power Supply Current
Output Supply Current
Test Conditions
Minimum
3.135
2.375
Typical
3.3
2.5
Maximum
3.465
2.625
18
11
Units
V
V
mA
mA
T
ABLE
3C. LVCMOS / LVTTL DC C
HARACTERISTICS
,
V
DD
= V
DDO
= 3.3V±5%, T
A
= -40°C
TO
85°C
Symbol
V
IH
V
IL
I
IH
I
IL
V
OH
Parameter
Input High Voltage
Input Low Voltage
Input High Current
Input Low Current
Output High Voltage
V
DD
= V
IN
= 3.465V
V
DD
= 3.465V, V
IN
= 0V
Refer to NOTE 1
I
OH
= -16mA
I
OH
= -100uA
Refer to NOTE 1
V
OL
Output Low Voltage
I
OL
= 16mA
I
OL
= 100uA
Ω
Test Conditions
Minimum
2
-0.3
-5
2.6
2.9
3
Typical
Maximum
V
DD
+ 0.3
1.3
150
Units
V
V
µA
µA
V
V
V
0.5
0.25
0.15
V
V
V
NOTE 1: Outputs terminated with 50
Ω
to V
DDO
/2. See Parameter Measurement Section, “3.3V Output Load Test Circuit”.
©2015 Integrated Device Technology, Inc
3
December 10, 2015
8304I Data Sheet
T
ABLE
3D. LVCMOS / LVTTL DC C
HARACTERISTICS
,
V
DD
= 3.3V±5%, V
DDO
= 2.5V±5%, T
A
= -40°C
TO
85°C
Symbol
V
IH
V
IL
I
IH
I
IL
V
OH
V
OL
Parameter
Input High Voltage
Input Low Voltage
Input High Current
Input Low Current
Output High Voltage; NOTE 1
Output Low Voltage; NOTE 1
ΩΩΩ
Test Conditions
Minimum
2
-0.3
Typical
Maximum
V
DD
+ 0.3
1.3
150
Units
V
V
µA
µA
V
V
DD
= V
IN
= 3.465V
V
DD
= 3.465V, V
IN
= 0V
-5
2.1
0.5
V
NOTE 1: Outputs terminated with 50Ω to V
DDO
/2. See Parameter Measurement Section, “3.3V/2.5V Output Load Test Circuit”.
T
ABLE
4A. AC C
HARACTERISTICS
,
V
DD
= V
DDO
= 3.3V±5%, T
A
= -40°C
TO
85°C
Symbol
f
MAX
tp
LH
tjit
tsk(o)
tsk(pp)
t
R
t
F
odc
Parameter
Output Frequency
Propagation Delay,
Low-to-High; NOTE 1
Buffer Additive Phase Jitter, RMS;
refer to Additive Phase Jitter Section
Output Skew; NOTE 2, 4
Part-to-Part Skew; NOTE 3, 4
Output Rise Time
Output Fall Time
Output Duty Cycle
30% to 70%
30% to 70%
250
250
40
ƒ
≤
166MHz
125MHz,
Integration Range
12kHz – 20MHz
ƒ = 133MHz
2
0.17
50
600
500
500
60
Test Conditions
Minimum
Typical
Maximum
166
3.3
Units
MHz
ns
ps
ps
ps
ps
ps
%
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established
when the device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet
specifications after thermal equilibrium has been reached under these conditions.
NOTE: All parameters measured at 166MHz unless noted otherwise.
NOTE 1: Measured from V
DD
/2 of the input to V
DDO
/2 of the output.
NOTE 2: Defined as skew between outputs at the same supply voltage and with equal load conditions.
Measured at V
DDO
/2.
NOTE 3: Defined as skew between outputs on different devices operating at the same supply voltages
and with equal load conditions. Using the same type of inputs on each device, the outputs are measured
at V
DDO
/2.
NOTE 4: This parameter is defined in accordance with JEDEC Standard 65.
©2015 Integrated Device Technology, Inc
4
December 10, 2015
8304I Data Sheet
T
ABLE
4B. AC C
HARACTERISTICS
,
V
DD
= 3.3V±5%, V
DDO
= 2.5V±5%, T
A
= -40°C
TO
85°C
Symbol
f
MAX
tp
LH
tsk(o)
tsk(pp)
t
R
t
F
odc
Parameter
Output Frequency
Propagation Delay, Low-to-High; NOTE 1
Output Skew; NOTE 2, 4
Part-to-Part Skew; NOTE 3, 4
Output Rise Time
Output Fall Time
Output Duty Cycle
30% to 70%
30% to 70%
250
250
40
ƒ
≤
166MHz
ƒ = 133MHz
2.3
Test Conditions
Minimum
Typical
Maximum
166
3.7
60
650
500
500
60
Units
MHz
ns
ps
ps
ps
ps
%
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established
when the device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet
specifications after thermal equilibrium has been reached under these conditions.
All parameters measured at 166MHz unless noted otherwise.
NOTE 1: Measured from V
DD
/2 of the input to V
DDO
/2 of the output.
NOTE 2: Defined as skew between outputs at the same supply voltage and with equal load conditions.
Measured at V
DDO
/2.
NOTE 3: Defined as skew between outputs on different devices operating at the same supply voltages
and with equal load conditions. Using the same type of inputs on each device, the outputs are measured
at V
DDO
/2.
NOTE 4: This parameter is defined in accordance with JEDEC Standard 65.
©2015 Integrated Device Technology, Inc
5
December 10, 2015
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