). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 90 °C/W.
Document Number: 73585
S-81448-Rev. B, 23-Jun-08
www.vishay.com
1
Si5480DU
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 8.6 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 8.6 A, V
GS
= 0 V
0.85
20
15
13
7
T
C
= 25 °C
12
30
1.2
40
30
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 1.7
Ω
I
D
≅
8.6 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 15 V, R
L
= 1.7
Ω
I
D
≅
8.6 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10.7 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10.7 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
1230
210
115
22.5
11
4.4
3.7
5.9
100
140
35
15
10
10
40
8
150
210
55
25
15
15
60
15
ns
Ω
34
17
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 1 mA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 7.2 A
V
GS
= 4.5 V, I
D
= 6.1 A
V
DS
= 15 V, I
D
= 7.2 A
30
0.013
0.018
23
0.016
0.022
1
30
33
- 6.2
3
± 100
1
10
V
mV/°C
V
ns
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73585
S-81448-Rev. B, 23-Jun-08
Si5480DU
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
V
GS
= 10 thru 5
V
24
I
D
- Drain C
u
rrent (A)
30
4
V
24
I
D
- Drain C
u
rrent (A)
18
18
T
C
= 125 °C
12
12
6
2
V
6
3
V
T
C
= 25 °C
T
C
= - 55 °C
0
0.0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.030
1800
Transfer Characteristics
R
DS(on)
- On-Resistance (mΩ)
0.026
C - Capacitance (pF)
1500
C
iss
1200
0.022
V
GS
= 4.5
V
0.018
900
600
C
oss
300
0.014
V
GS
= 10
V
0.010
0
6
12
18
24
30
0
0
C
rss
5
10
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 10.7 A
V
GS
- Gate-to-So
u
rce
V
oltage (
V
)
8
R
DS(on)
- On-Resistance
(
N
ormalized)
1.4
1.2
1.0
0.8
0.6
0
0
5
10
15
20
25
0.4
- 50
1.8
1.6
V
GS
= 10
V
I
D
= 7.2 A
Capacitance
6
V
DS
= 15
V
4
V
DS
= 24
V
2
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 73585
S-81448-Rev. B, 23-Jun-08
On-Resistance vs. Junction Temperature
www.vishay.com
3
Si5480DU
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
R
DS(on)
- Drain-to-So
u
rce On-Resistance (mΩ)
0.05
I
D
= 7.2 A
0.04
T
J
= 150 °C
I
S
- So
u
rce C
u
rrent (A)
10
T
A
= 125 °C
0.03
T
J
= 25 °C
0.02
T
A
= 25 °C
0.01
0
2
4
6
8
10
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
2.6
2.4
2.2
2.0
1.8
1.6
1.4
10
1.2
1.0
- 50
0
0.001
I
D
= 250
µA
Po
w
er (
W
)
40
50
On-Resistance vs. Gate-to-Source Voltage
V
GS(th)
(
V
)
30
20
- 25
0
25
50
75
100
125
150
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
Single Pulse Power, Junction-to-Ambient
BVDSS Limited
100
µs
10
I
D
- Drain C
u
rrent (A)
1 ms
1
10 ms
100 ms
1s
0.1
T
A
= 25 °C
Single Pulse
10 s
DC
0.01
0.1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73585
S-81448-Rev. B, 23-Jun-08
Si5480DU
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
35
30
32
Po
w
er Dissipation (
W
)
25
20
15
10
5
0
0
25
50
75
100
125
150
25
50
75
100
125
150
I
D
- Drain C
u
rrent (A)
24
16
Package Limited
8
0
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
“tensymetry”这个词在《韦伯斯特词典》中没有解释，但在医学界却广为人知。由Tensys Medical Systems公司开发的tensymetry是一种使用生物机械、电气、软件工程的专有组合技术。利用这三种强大的技术，你可在手术室内对病人的心跳血压进行精确、连续、实时和非侵入性测量。 该技术结出的果实就是该公司的T-line Tensymeter产品。该产品线的最新进展是去年...[详细]
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