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CY15B104Q-LHXI

产品描述F-RAM F-RAM Memory Serial
产品类别存储    存储   
文件大小832KB,共22页
制造商Cypress(赛普拉斯)
标准
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CY15B104Q-LHXI概述

F-RAM F-RAM Memory Serial

CY15B104Q-LHXI规格参数

参数名称属性值
是否Rohs认证符合
包装说明TDFN-8
Reach Compliance Codecompliant
ECCN代码EAR99
Samacsys Confidence4
Samacsys StatusReleased
Samacsys PartID313532
Samacsys Pin Count9
Samacsys Part CategoryIntegrated Circuit
Samacsys Package CategorySmall Outline No-lead
Samacsys Footprint Name8-pin DFN 001-85579
Samacsys Released Date2017-03-29 11:23:29
Is SamacsysN
JESD-30 代码R-PDSO-N8
长度6 mm
内存密度4194304 bit
内存集成电路类型MEMORY CIRCUIT
内存宽度8
功能数量1
端子数量8
字数524288 words
字数代码512000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织512KX8
封装主体材料PLASTIC/EPOXY
封装代码HVSON
封装形状RECTANGULAR
封装形式SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
座面最大高度0.8 mm
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式NO LEAD
端子节距1.27 mm
端子位置DUAL
宽度5 mm
Base Number Matches1

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CY15B104Q
4-Mbit (512 K × 8) Serial (SPI) F-RAM
4-Mbit (512 K × 8) Serial (SPI) F-RAM
Features
Functional Description
The CY15B104Q is a 4-Mbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 151 years
while eliminating the complexities, overhead, and system-level
reliability problems caused by serial flash, EEPROM, and other
nonvolatile memories.
Unlike serial flash and EEPROM, the CY15B104Q performs
write operations at bus speed. No write delays are incurred. Data
is written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared to other
nonvolatile memories. The CY15B104Q is capable of supporting
10
14
read/write cycles, or 100 million times more write cycles
than EEPROM.
These capabilities make the CY15B104Q ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data collection, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
The CY15B104Q provides substantial benefits to users of serial
EEPROM or flash as a hardware drop-in replacement. The
CY15B104Q uses the high-speed SPI bus, which enhances the
high-speed write capability of F-RAM technology. The device
incorporates a read-only Device ID that allows the host to
determine the manufacturer, product density, and product
revision. The device specifications are guaranteed over an
industrial temperature range of –40
C
to +85
C.
For a complete list of related documentation, click
here.
4-Mbit ferroelectric random access memory (F-RAM) logically
organized as 512 K × 8
14
High-endurance 100 trillion (10 ) read/writes
151-year data retention (See the
Data Retention and
Endurance
table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
300
A
active current at 1 MHz
100
A
(typ) standby current
3
A
(typ) sleep mode current
Low-voltage operation: V
DD
= 2.0 V to 3.6 V
Industrial temperature: –40
C
to +85
C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin thin dual flat no leads (TDFN) package
Restriction of hazardous substances (RoHS) compliant
Logic Block Diagram
WP
CS
HOLD
SCK
Instruction Decoder
Clock Generator
Control Logic
Write Protect
512 K x 8
F-RAM Array
Instruction Register
Address Register
Counter
SI
19
8
Data
I/
O Register
3
Nonvolatile Status
Register
SO
Cypress Semiconductor Corporation
Document Number: 001-94240 Rev. *E
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised November 9, 2017

CY15B104Q-LHXI相似产品对比

CY15B104Q-LHXI CY15B104Q-LHXIT CY15B104Q-SXIT
描述 F-RAM F-RAM Memory Serial F-RAM F-RAM Memory Serial F-RAM F-RAM Memory Serial
是否Rohs认证 符合 符合 -
包装说明 TDFN-8 HVSON, -
Reach Compliance Code compliant compliant -
ECCN代码 EAR99 EAR99 -
Is Samacsys N N -
JESD-30 代码 R-PDSO-N8 R-PDSO-N8 -
长度 6 mm 6 mm -
内存密度 4194304 bit 4194304 bit -
内存集成电路类型 MEMORY CIRCUIT MEMORY CIRCUIT -
内存宽度 8 8 -
功能数量 1 1 -
端子数量 8 8 -
字数 524288 words 524288 words -
字数代码 512000 512000 -
工作模式 SYNCHRONOUS SYNCHRONOUS -
最高工作温度 85 °C 85 °C -
最低工作温度 -40 °C -40 °C -
组织 512KX8 512KX8 -
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY -
封装代码 HVSON HVSON -
封装形状 RECTANGULAR RECTANGULAR -
封装形式 SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE -
座面最大高度 0.8 mm 0.8 mm -
最大供电电压 (Vsup) 3.6 V 3.6 V -
最小供电电压 (Vsup) 2 V 2 V -
标称供电电压 (Vsup) 3.3 V 3.3 V -
表面贴装 YES YES -
技术 CMOS CMOS -
温度等级 INDUSTRIAL INDUSTRIAL -
端子形式 NO LEAD NO LEAD -
端子节距 1.27 mm 1.27 mm -
端子位置 DUAL DUAL -
宽度 5 mm 5 mm -
Base Number Matches 1 1 -

 
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